1 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf base part number package type standard pack orderable part number form quantity IRF6641PBF directfet medium can tape and reel 4800 irf6641trpbf sq sx st sh mq mx mt mn mz description this digital audio mosfet is s pecifically designed for class-d audio amplifier ap plications. this mosfet utilizes the latest processing techniques to achieve low on-resi stance per silicon area. furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-d aud io amplifier performance factors such as efficiency, thd, and emi. the IRF6641PBF device utilizes directfet ? packaging technology. directfet ? packaging technology offers lower parasitic inductance and resistance when compared to conventional wi rebonded soic packaging. lower inductance improves emi performance by reducing the voltage ringing that ac companies fast current transients. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assemb ly equipment and vapor phase, in fra-red or convection solderin g techniques, when application note an-1035 is followed regard ing the manufacturing method and processes. the directfet ? package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipatio n. these features combine to make this mosfet a highly efficien t, robust and reliable device for class-d audio amplifier applicati ons. absolute maximum ratings parameter max. units v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v ? 26 i d @ t a = 25c continuous drain current, v gs @ 10v ? 4.6 i d @ t a = 70c continuous drain current, v gs @ 10v ? 3.7 a i dm pulsed drain current ?? 37 e as single pulse avalanche energy ? 46 mj i ar avalanche current ? 11 a p d @t c = 25c power dissipation 89 p d @t a = 25c power dissipation ? 2.8 w p d @t a = 70c power dissipation ? 1.8 linear derating factor 0.022 w/c t j operating junction and -40 to + 150 c t stg storage temperature range applicable directfet outline and substr ate outline (see p.6, 7 for details) digital audio mosfet directfet ? isometric mz v ds 200 v r ds(on) typ. @ v gs = 10v 51 m ? qg typ. 34 nc r g(int) typ. 1.0 ? key parameters features ?? latest mosfet silicon technology ?? key parameters optimized for class-d audio amplifier applications ?? low r ds(on) for improved efficiency ?? low qg for better thd and improved efficiency ?? low qrr for better thd and lower emi ?? low package stray inductance for reduced ringing and lower emi ?? can deliver up to 400 w per channel into 8 ?? load in half-bridge configuration amplifier ?? dual sided cooling compatible ?? compatible with existing surface mount technologies ?? rohs compliant, halogen-free ?? lead-free (qualified up to 260c reflow) notes ? through ? are on page 9
2 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 0.23 ??? v/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 51 59.9 m ? v gs = 10v, i d = 5.5a ? v gs(th) gate threshold voltage 3.0 4.0 4.9 v v ds = v gs , i d = 150a ? v gs(th) gate threshold voltage coefficient ??? -11 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic @ t j = 25c (unless otherwise specified) gfs forward transconductance 13 ??? ??? s v ds = 10v, i d = 5.5a q g total gate charge ??? 34 48 q gs1 pre-vthgate-to-source charge ??? 8.7 ??? v ds = 100v q gs2 post-vth gate-to-source charge ??? 1.9 ??? nc v gs = 10v q gd gate-to-drain charge ??? 9.5 14 i d = 5.5a q godr gate charge overdrive ??? 14 ??? q sw switch charge (q gs2 + q gd ) ??? 11 ??? v ds = 16v, v gs = 0v t d(on) turn-on delay time ??? 16 ??? v dd = 100v, v gs = 10v t r rise time ??? 11 ??? ns i d = 5.5a t d(off) turn-off delay time ??? 31 ??? r g = 6.2 ? t f fall time ??? 6.5 ??? c iss input capacitance ??? 2290 ??? v gs = 0v c oss output capacitance ??? 240 ??? v ds = 25v c rss reverse transfer capacitance ??? 46 ??? pf ? = 1.0mhz c oss output capacitance ??? 1780 ??? v gs =0v, v ds =1.0v, ?=1.0mhz c oss output capacitance ??? 100 ??? v gs =0v, v ds =160v, ?=1.0mhz diode characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 26 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 37 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 5.5a, v gs = 0v ? t rr reverse recovery time ??? 85 130 ns t j = 25c, i f = 5.5a,v dd = 100v q rr reverse recovery charge ??? 320 480 nc di/dt = 100a/s ? thermal resistance parameter typ. max. units r ? ja junction-to-ambient ? ??? 45 r ? ja junction-to-ambient ? 12.5 ??? r ? ja junction-to-ambient ? 20 ??? c/w r ? jc junction-to-case ?? ??? 1.4 r ? j-pcb junction-to-pcb mounted 1.0 ???
3 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 5.5a fig 5. typical capacitance vs. drain-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8. 0v bottom 7. 0v ? 60s pulse width tj = 25c 7.0v 0.1 1 10 v ds , drain-to-source voltag e (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 7.0v ? 60s pulse width tj = 150c vgs top 15v 10v 8. 0v bottom 7. 0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 10v ? 60s pulse w idth -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 5.5a v gs = 10v fig 6. typical gate charge vs gate-to-source voltage
4 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds ( on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec fig 8. maximum safe operating area 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to- drain voltage (v) 0 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 i d , d r a i n c u r r e n t ( a ) fig 7. typical source-drain diode forward voltage 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r ma l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc fig 9. maximum drain current vs. ambient temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 t y p i c a l v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a fig 10. typical threshold voltage vs. junction temperature fig 11. maximum effective transient thermal impedance, junction-to-ambient ?
5 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf 0 10 20 30 40 50 60 i d , drain current (a) 50 60 70 80 90 100 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vg s = 7.0v vg s = 8.0v vg s = 10v vg s = 15v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 5.7a bottom 11a 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 120 140 160 180 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 5.5a t j = 25c t j = 125c fig 12. typical on-resistance vs. gate voltage fig 13. typical on-resista nce vs. drain current fig 15a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 14. maximum avalanche energy vs. drain current t p v (br)dss i as fig 15b. unclamped inductive waveforms fig 16a. switching time test circuit fig 16b. switching time waveforms
fig 17a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 17b. gate charge waveform vdd fig 18. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets
7 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf directfet ? substrate and pcb layout, mz outline (medium size can, z-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. note: for the most current drawing please refer to ir website at http://www.irf.com/package/
8 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf note: for the most current drawing please refer to ir website at http://www.irf.com/package/ directfet ? outline dimension, mz outline (medium size can, d-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet ? part marking imperial max 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 min 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 max 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 code a b c d e f g h j k l m r p dimensions metric max 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007
9 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ directfet ? tape & reel dimension (showing component orientation). qualification information ? qualification level moisture sensitivity level directfet msl1 (per jedec j-std-020d ???) rohs compliant yes consumer ?? (per jedec jesd47f) ??? note: for the most current drawing please refer to ir website at http://www.irf.com/package/ notes: ?? repetitive rating; pulse width limited by max. junction temperature. ?? starting t j = 25c, l = 0.77mh, r g = 25 ? , i as = 11a. ?? surface mounted on 1 in. square cu board. ?? pulse width ? 400s; duty cycle ? 2%. ?? coss eff. is a fixed capacita nce that gives the same charging time as coss while v ds is rising from 0 to 80% v dss . ?? used double sided cooling , mounting pad with large heatsink. ?? mounted on minimum footprint full size board with metalized back and with small clip heatsink. ?? t c measured with thermal couple mounted to top (drain) of part. ?? r ? is measured at t j of approximately 90c. min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 dimensions metric imperial loaded tape feed direction standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6641trpbf). for 1000 parts on 7" reel, order irf6641tr1pbf ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? higher qualification ratings may be availabl e should the user have such requirements. please contact your international rect ifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standa rd at the time of product release.
10 www.irf.com ? 2013 international rectifier july 1, 2013 irf6641trpbf revision history date comments 05/17/2013 ?? converted the data sheet to class-d audio formatting template. no change in electrical parameters. 06/28/2013 ?? added the consumer qualification level information, on page 9.
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