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1. product profile 1.1 general description the BGU8010 is a low noise amplifier (lna) for gnss receiver applications, available in a small plastic 6-pin extremely thin leadless package. the BGU8010 requires one external matching inductor and one external decoupling capacitor. the BGU8010 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. it has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. at low jamming powe r levels it delivers 16.1 db gain at a noise figure of 0.85 db. during high jamming power levels, resulting for example from a cellular transmit burst, it temporar ily increases its bias curr ent to improve sensitivity. 1.2 features and benefits ? covers full gnss l1 band, from 1559 mhz to 1610 mhz ? noise figure (nf) = 0.85 db ? gain 16.1 db ? high input 1 db compression point of ? 9 dbm ? high out of band ip3 i of 3 dbm ? supply voltage 1.5 v to 3.1 v ? optimized performance at very low supply current of 3.1 ma ? power-down mode current consumption < 1 ? a ? integrated temper ature stabilized bias for easy design ? requires only one input matching inductor and one supply decoupling capacitor ? input and output dc decoupled ? esd protection on all pins (hbm > 2 kv) ? integrated matching for the output ? available in a 6-pins leadless package 1.1 mm ? 0.9 mm ? 0.47 mm; 0.4 mm pitch: sot1230 ? 180 ghz transit frequency - sige:c technology ? moisture sensitivity level of 1 1.3 applications ? lna for gps, glonass, galileo and compa ss (beidou) in smar t phones, feature phones, tablets, digital still cameras, digital video came ras, rf front-end modules, complete gnss modules and personal health applications. BGU8010 sige:c low noise amplifier mmi c for gps, glonass, galileo and compass rev. 1 ? 24 december 2013 product data sheet ; 6 2 1
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 2 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 1.4 quick reference data [1] pcb losses are subtracted. [2] f 1 = 1713 mhz; f 2 = 1851 mhz, p i = ? 20 dbm per carrier. [3] f 1 = 1713 mhz; f 2 = 1851 mhz; p i = ? 20 dbm at f 1 ; p i = ? 65 dbm at f 2 . 2. pinning information 3. ordering information 4. marking table 1. quick reference data f = 1575 mhz; v cc = 2.85 v; p i < ? 40 dbm; t amb =25 ? c; input matched to 50 ? using a 6.8 nh inductor, see figure 1 ; unless otherwise specified. symbol parameter conditions min typ max unit v cc supply voltage 1.5 - 3.1 v i cc supply current - 3.2 - ma g p power gain no jammer - 16.1 - db nf noise figure no jammer [1] -0.85- db p i(1db) input power at 1 db gain compression - ? 9- dbm ip3 i input third-order intercept point [2] -3- dbm [3] -0- dbm table 2. pinning pin description simplified outline graphic symbol 1gnd transparent top view 2v cc 3rf_out 4gnd_rf 5rf_in 6 enable ddd table 3. ordering information type number package name description version BGU8010 xson6 plastic very thin small outline package; no leads; 6 terminals; body 1.1 ? 0.9 ? 0.47 mm sot1230 om7822 evb BGU8010 evaluation board, mmic only - table 4. marking codes type number marking code BGU8010 b
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 3 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 5. limiting values [1] stressed with pulses of 200 ms in duration, with application circuit as in figure 1 . [2] warning: due to internal esd diode protecti on, the applied dc voltage shall not exceed v cc +0.6 v and shall not exceed 5.0 v in order to avoid excess current. [3] the rf input and rf output are ac coupl ed through internal dc blocking capacitors. 6. recommended operating conditions 7. thermal characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). absolute maximum ratings are given as limiting values of st ress conditions during operation, that must not be exceeded under the worst probable conditions. symbol parameter conditions min max unit v cc supply voltage [1] ? 0.5 +5.0 v v i(enable) input voltage on pin enable v i(enable) < v cc + 0.6 v [1][2] ? 0.5 +5.0 v v i(rf_in) input voltage on pin rf_in dc, v i(rf_in) < v cc +0.6 v [1][2][3] ? 0.5 +5.0 v v i(rf_out) input voltage on pin rf_out dc, v i(rf_out) < v cc + 0.6 v [1][2][3] ? 0.5 +5.0 v p i input power f =1575 mhz [1] -10dbm p tot total power dissipation t sp ? 130 ?c- 5 5 m w t stg storage temperature ? 65 +150 ? c t j junction temperature - 150 ? c v esd electrostatic discharge voltage human body model (hbm) according to ansi/esda/jedec standard js-001 - ? 2kv charged device model (cdm) according to jedec standard jesd22-c101 - ? 1kv table 6. operating conditions symbol parameter conditions min typ max unit v cc supply voltage 1.5 - 3.1 v t amb ambient temperature ? 40 +25 +85 ?c v i(enable) input voltage on pin enable off state - - 0.3 v on state 0.8 - - v table 7. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 225 k/w
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 4 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 8. characteristics [1] pcb losses are subtracted [2] including pcb losses [3] f 1 = 1713 mhz; f 2 = 1851 mhz, p i = ? 20 dbm per carrier. [4] f 1 = 1713 mhz; f 2 = 1851 mhz; p i = ? 20 dbm at f 1 ; p i = ? 65 dbm at f 2 . table 8. characteristics at v cc = 1.8 v f = 1575 mhz; v cc = 1.8 v; v i(enable) ? 0.8 v; p i < ? 40 dbm; t amb =25 ? c; input matched to 50 ? using a 8.2 nh inductor, see figure 1 ; unless otherwise specified. symbol parameter conditions min typ max unit i cc supply current v i(enable) ? 0.8 v p i < ? 40 dbm - 3.1 - ma p i = ? 20 dbm - 5.0 - ma v i(enable) ? 0.3 v - - 1 ? a g p power gain no jammer - 15.8 - db p jam = ? 20 dbm; f jam = 850 mhz - 15.0 - db p jam = ? 20 dbm; f jam = 1850 mhz - 16.5 - db rl in input return loss p i < ? 40 dbm - 12 - db p i = ? 20 dbm - 14 - db rl out output return loss p i < ? 40 dbm - 12 - db p i = ? 20 dbm - 12 - db isl isolation - 24 - db nf noise figure p i = ? 40 dbm, no jammer [1] -0.85- db p i = ? 40 dbm, no jammer [2] -0.90- db p jam = ? 20 dbm; f jam = 850 mhz [2] -1.3- db p jam = ? 20 dbm; f jam = 1850 mhz [2] -1.5- db p i(1db) input power at 1 db gain compression - ? 12 - dbm ip3 i input third-order intercept point [3] -1 - dbm [4] -0 - dbm t on turn-on time time from v i(enable) on, to 90 % of the gain -- 2 ? s t off turn-off time time from v i(enable) off, to 10 % of the gain -- 1 ? s
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 5 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass [1] pcb losses are subtracted [2] including pcb losses [3] f 1 = 1713 mhz; f 2 = 1851 mhz, p i = ? 20 dbm per carrier. [4] f 1 = 1713 mhz; f 2 = 1851 mhz; p i = ? 20 dbm at f 1 ; p i = ? 65 dbm at f 2 . table 9. characteristics at v cc = 2.85 v f = 1575 mhz; v cc = 2.85 v; v i(enable) ? 0.8 v; p i < ? 40 dbm; t amb =25 ? c; input matched to 50 ? using a 8.2 nh inductor, see figure 1 ; unless otherwise specified. symbol parameter conditions min typ max unit i cc supply current v i(enable) ? 0.8 v p i < ? 40 dbm - 3.2 - ma p i = ? 20 dbm - 5.0 - ma v i(enable) ? 0.3 v - - 1 ? a g p power gain no jammer - 16.1 - db p jam = ? 20 dbm; f jam = 850 mhz - 15.2 - db p jam = ? 20 dbm; f jam = 1850 mhz - 16.5 - db rl in input return loss p i < ? 40 dbm - 13 - db p i = ? 20 dbm - 15 - db rl out output return loss p i < ? 40 dbm - 12 - db p i = ? 20 dbm - 12 - db isl isolation - 24 - db nf noise figure p i = ? 40 dbm, no jammer [1] -0.85- db p i = ? 40 dbm, no jammer [2] -0.90- db p jam = ? 20 dbm; f jam =850mhz [2] -1.3- db p jam = ? 20 dbm; f jam = 1850 mhz [2] -1.5- db p i(1db) input power at 1 db gain compression - ? 9- dbm ip3 i input third-order intercept point [3] -3- dbm [4] -0- dbm t on turn-on time time from v i(enable) on, to 90 % of the gain -- 2 ? s t off turn-off time time from v i(enable) off, to 10 % of the gain -- 1 ? s
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 6 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 9. application information 9.1 gnss lna see application note an11336 for details. for a list of components see table 10 . fig 1. schematics gnss lna evaluation board table 10. list of components for schematics see figure 1 . component description value remarks c1 decoupling capacitor 1 nf ic1 BGU8010 - nxp l1 high quality matching inductor 8.2 nh murata lqw15a ddd / 5 ) rxw 5 ) lq 9 hq 9 ff & ,&
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 7 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 9.2 graphs p i = ? 45 dbm. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c p i = ? 45 dbm. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 2. supply current as a function of supply voltage; typical values fig 3. supply current as a function of ambient temperature; typical values p i = ? 45 dbm; v cc =1.8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; v cc =1.8v. (1) p i = ? 45 dbm (2) p i = ? 30 dbm (3) p i = ? 20 dbm (4) p i = ? 15 dbm fig 4. power gain as a function of frequency; typical values fig 5. power gain as a function of frequency; typical values ddd 9 && 9 , && && , && p$ p$ p$ ddd 7 dpe ?& , && && , && p$ p$ p$ ddd i0+] * s * s g% g% g% ddd i0+] * s * s g% g% g%
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 8 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass p i = ? 45 dbm; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v f = 1575 mhz; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 6. power gain as a function of frequency; typical values fig 7. power gain and supply current as function of input power; typical values t amb = 25 ? c; no jammer, including pcb losses. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v f = 1575 mhz; no jammer, including pcb losses. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 8. noise figure as a function of frequency; typical values fig 9. noise figure as a function of supply voltage; typical values ddd i0+] * s * s g% g% g% ddd 3 l g%p * s * s g% g% g% , && && , && p$ p$ p$ * s * s , && && , && ddd i0+] 1) 1) 1) g% g% g% ddd 9 && 9 1) 1) 1) g% g% g%
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 9 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass f = 1575 mhz; no jammer, including pcb losses. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 10. noise figure as a function of ambient temperature; typical values f jam = 850 mhz; t amb = 25 ? c; f = 1575 mhz; including pcb losses. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v f jam = 1850 mhz; t amb =25 ? c; f = 1575 mhz; including pcb losses. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 11. noise figure as a function of jamming power; typical values fig 12. noise figure as a function of jamming power; typical values ddd 7 dpe ?& 1) 1) 1) g% g% g% ddd 3 mdp g%p 1) 1) 1) g% g% g% ddd 3 mdp g%p 1) 1) 1) g% g% g%
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 10 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass p i = ? 45 dbm; v cc =1.8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; v cc =1.8v. (1) p i = ? 45 dbm (2) p i = ? 30 dbm (3) p i = ? 20 dbm (4) p i = ? 15 dbm fig 13. input return loss as a function of frequency; typical values fig 14. input return loss as a function of frequency; typical values p i = ? 45 dbm; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v f = 1575 mhz; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 15. input return loss as a function of frequency; typical values fig 16. input return loss as a function of input power; typical values ddd i0+] 5/ 5/ lq lq 5/ lq g% g% g% ddd i0+] 5/ 5/ lq lq 5/ lq g% g% g% ddd i0+] 5/ 5/ lq lq 5/ lq g% g% g% ddd 3 l g%p 5/ 5/ lq lq 5/ lq g% g% g%
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 11 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass p i = ? 45 dbm; v cc =1.8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; v cc =1.8v. (1) p i = ? 45 dbm (2) p i = ? 30 dbm (3) p i = ? 20 dbm (4) p i = ? 15 dbm fig 17. output return loss as a function of frequency; typical values fig 18. output return loss as a function of frequency; typical values p i = ? 45 dbm; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v f = 1575 mhz; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 19. output return loss as a function of frequency; typical values fig 20. output return loss as a function of input power; typical values ddd i0+] 5/ 5/ rxw rxw 5/ rxw g% g% g% ddd i0+] 5/ 5/ rxw rxw 5/ rxw g% g% g% ddd i0+] 5/ 5/ rxw rxw 5/ rxw g% g% g% ddd 3 l g%p 5/ 5/ rxw rxw 5/ rxw g% g% g%
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 12 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass p i = ? 45 dbm; v cc =1.8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; v cc =1.8v. (1) p i = ? 45 dbm (2) p i = ? 30 dbm (3) p i = ? 20 dbm (4) p i = ? 15 dbm fig 21. isolation as a function of frequency; typical values fig 22. isolation as a function of frequency; typical values p i = ? 45 dbm; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v f = 1575 mhz; t amb =25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 23. isolation as a function of frequency; typical values fig 24. isolation as a function of input power; typical values ddd i0+] ,6/ ,6/ ,6/ g% g% g% ddd i0+] ,6/ ,6/ ,6/ g% g% g% ddd i0+] ,6/ ,6/ ,6/ g% g% g% ddd 3 l g%p ,6/ ,6/ ,6/ g% g% g%
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 13 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass f = 850 mhz. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c f = 1850 mhz. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 25. input power at 1 db gain compression as a function of supply voltage; typical values fig 26. input power at 1 db gain compression as a function of supply voltage; typical values f = 1575 mhz. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c f 1 = 1713 mhz; f 2 = 1851 mhz; p i = ? 20 dbm at f 1 ; p i = ? 65 dbm at f 2 ; t amb =25 ? c. fig 27. input power at 1 db gain compression as a function of supply voltage; typical values fig 28. input third order intercept point and third order intermodulation distortion as function of supply voltage; typical values ddd 9 && 9 3 lg% lg% 3 lg% g%p g%p g%p ddd 9 && 9 3 lg% lg% 3 lg% g%p g%p g%p ddd 9 && 9 3 lg% lg% 3 lg% g%p g%p g%p ddd 9 && 9 ,3 ,3 l ,3 l g%p g%p g%p ,0' ,0' ,0' g%p g%p g%p ,3 ,3 l ,3 l ,0'ri0+]vljqdo ,0'ri0+]vljqdo ,0'ri0+]vljqdo
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 14 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass p i = ? 45 dbm; v cc =1.8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c p i = ? 45 dbm; t amb = 25 ? c. (1) v cc = 1.5 v (2) v cc = 1.8 v (3) v cc = 2.85 v (4) v cc = 3.1 v fig 29. rollett stability fa ctor as a function of frequency; typical values fig 30. rollett stability factor as a function of frequency; typical values ddd i0+] . . ddd i0+] . .
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 15 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 10. package outline fig 31. package outline sot1230 (xson6) 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 vrwbsr 8qlw pp plq qrp pd[ $ 'lphqvlrqvppduhwkhruljlqdoglphqvlrqv 1rwh 'lphqvlrq$lvlqfoxglqjsodwlqjwklfnqhvv 627 $ ' (h /9< < he ( $ $ ' slq lqgh[duhd slq lqgh[duhd vkdsh rswlrqdo? ? ? vkdsh rswlrqdo? % $ \ & \ y$% y$% / e h h h vfdoh pp ;621sodvwlfyhu\wklqvpdoorxwolqhsdfndjhqrohdgvwhuplqdoverg\[[pp &
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 16 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 11. handling information 12. abbreviations 13. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 11. abbreviations acronym description esd electrostatic discharge glonass global navigation satellite system gnss global navigation satellite system gps global positioning system hbm human body model mmic monolithic microwave integrated circuit pcb printed-circuit board sige:c silicon germanium carbon table 12. revision history document id release date data sheet status change notice supersedes BGU8010 v.1 20131224 product data sheet - -
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 17 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BGU8010 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 24 december 2013 18 of 19 nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BGU8010 sige:c lna mmic for gps, glonass, galileo and compass ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 24 december 2013 document identifier: BGU8010 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 recommended operating conditions. . . . . . . . 3 7 thermal characteristics . . . . . . . . . . . . . . . . . . 3 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 application information. . . . . . . . . . . . . . . . . . . 6 9.1 gnss lna . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 9.2 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 11 handling information. . . . . . . . . . . . . . . . . . . . 16 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 15 contact information. . . . . . . . . . . . . . . . . . . . . 18 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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