sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 1 advance information normally-off trench silicon carbide power jfet ? hermetic to-258 packaging ? 200c maximum operating temperature (for 260 o c contact factory) ? available screening: - mil-prf-19500 equivalent - space level - mil-std-750 methods & conditions ? inherent radiation tolerance >100k tid ? compatible with standard gate driver ics ? positive temperature coef cient for ease of paralleling ? temperature independent switching behavior ? extremely fast switching ? 1700 volt drain-source blocking voltage ? r ds(on)max of 0.550 ? ? voltage controlled ? low gate charge ? low intrinsic capacitance applications: ? flyback auxiliary power supplies for: - satellite solar inverters - mil spec high voltage power supplies - switch mode - uninterrupted ? jet engine electronics ? down-hole electronics (motor / compressor control) maximum ratings bv ds 1700 v rds (on)max 0.550 : e ts,typ 74 j product summary parameter symbol conditions value unit i d, tj=125 t j = 125 c 4 i d, tj=175 t j = 175 c 3 pulsed drain current (1) i dm t c = 25 c 8a short circuit withstand time t sc v dd < 800 v, t c < 125 c tbd s power dissipation p d t c = 25 c 58 w gate r source voltage v gs ac (2) r 15 to +15 v operating and storage temperature t j , t j,stg r 55 to +200* o c lead temperature for soldering t sold 1/8" from case < 10 s 260 o c (1) limited by pulse width (2) rg ext =1 ohm, t p < 200ns, see figure 5 for static conditions *contact factory for 260 o c continuous drain current a thermal characteristics typ max thermal resistance, junction r to r case r th,jc r tbd thermal resistance, junction r to r ambient r th,ja r tbd c / w value unit symbol parameter g (1) s (3) d (2,4) internal schematic 1 2 3 4 to-258 non-isolated tab version shown. for isolated tab version, tab (4) is no connect. die inside features: for more products and information, please visit our website at www.micross.com
sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 2 advance information min typ max drain r source blocking voltage bv ds v gs = 0 v, i d = 200 ? a 1700 r r v v ds = 1700 v, v gs = 0 v, tj = 25 o c r 10 200 v ds = 1700 v, v gs = 0 v, tj = 175 o c r 50 1000 v ds = 1700 v, v gs = r 15 v, tj = 25 o c r 10 r v ds = 1700 v, v gs = r 15 v, tj = 175 o c r 30 r v gs = r 15 v, v ds = 0v r r 0.02 r 0.1 v gs = r 15 v, v ds = 1700v r r 0.02 r i d = 3 a, v gs = 3 v, tj = 25 c r 0.45 0.55 i d = 3 a, v gs = 3 v, tj = 125 c r 1.08 r gate threshold voltage v gs(th) v ds = 1 v, i d = 10 ma 1.15 1.4 1.75 v gate forward current i gfwd v gs = 3 v r 135 r ma r g f = 1 mhz, drain r source shorted r 15 r : r g(on) v gs >2.7v; see figure 5 r 1 r : input capacitance c iss r 170 r output capacitance c oss r 20 r reverse transfer capacitance c rss r 17 r effective output capacitance, energy related c o(er) v ds = 0 v to 600 v, v gs = 0 v r 20 r turn r on delay t on r 12 r rise time t r r 14 r turn r off delay t off r 28 r fall time t f r 30 r turn r on energy e on r 41 r turn r off energy e off r 33 r total switching energy e ts r 74 r turn r on delay t on r tbd r rise time t r r tbd r turn r off delay t off r tbd r fall time t f r tbd r turn r on energy e on r tbd r turn r off energy e off r tbd r total switching energy e ts r tbd r total gate charge q g r 10 r gate r source charge q gs r 8 r gate r drain charge q gd r 1 r v ds = 850 v, i d = 3 a, inductive load, t j = 150 o c gate driver = +15v unipolar rg ext = 20ohm see figure 14 for typical gate drive / inductive load switching circuit. v ds = 850 v, i d = 3 a, v gs = + 2.5 v ns j ns j nc dynamic characteristics v dd = 300 v pf switching characteristics v ds = 850 v, i d = 3 a, inductive load, t j = 25 o c gate driver = +15v unipolar rg ext = 20ohm see figure 14 for typical gate drive / inductive load switching circuit. on characteristics drain r source on r resistance gate resistance r ds(on) : total drain leakage current total gate reverse leakage i dss i gss a ma off characteristics value unit symbol parameter conditions electrical characteristics
sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 3 advance information figure 1. typical output characteristics i d = f(v ds ); t j = 25 c; parameter: v gs figure 2. typical output characteristics i d = f(v ds ); t j = 125 c; parameter: v gs 0 1 2 3 4 5 6 7 8 9 0246 v ds , drain-source voltage (v) i d , drain-source current (a) 3.0 v 2.5 v 2.0 v 1.5 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0246 v ds , drain-source voltage (v) i d , drain-source current (a) 3.0 v 2.5 v 2.0 v 1.5 v figure 3. typical output characteristics i d = f(v ds ); t j = 175c; parameter: v gs figure 4. typical transfer characteristics i d = f(v gs ); v ds = 5v 0 1 2 3 4 5 6 7 8 9 0.00 0.50 1.00 1. 50 2.00 2.50 3.00 v gs , gate-source voltage (v) i d , drain-source current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0123456 v ds , drain-source voltage (v) i d , drain-source current (a) 2.5 v 2.0 v 1.5 v 3.0 v 25 o c 125 o c 150 o c 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0246810 i d , drain current (a) r ds(on) , drain-source on-resistance (
) 25 o c 175 o c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1.5 2.0 2.5 3.0 v gs , gate-source voltage (v) i gs , gate-source current (a) 0.0 0.5 1.0 1.5 2345 175 o c 25 o c figure 5. gate-source current i gs = f(v gs ); parameter: t j figure 6. drain-source on-resistance r ds(on) = f(i d ); v gs = 3.0; parameter: t j
sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 4 advance information figure 7. drain-source on-resistance r ds(on) = f(t j ); parameter: i gs figure 8. drain-source on-resistance r ds(on) = f(i gs ); t j = 25 o c 0.420 0.430 0.440 0.450 0.460 0.470 0.480 0.490 0.500 0.1 1.0 10.0 100.0 i gs , gate-source current (ma) r ds(on) , drain-source on-resistance (
) 10ma 100ma 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 0 50 100 150 200 t j , junction temperature (c) r ds(on) , drain-source on-resistance (
) figure 9. typical capacitance c = f(v ds ); v gs = 0 v; f = 1 mhz figure 10. gate charge q g = f(v gs ); v ds = 900v; i d = 3a, t j = 25 o c 1 10 100 1000 0 300 600 900 1200 1500 1800 v ds , drain-source voltage (v) c, capacitance (pf) c rss c oss c iss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 024681012 q g , total gate charge (nc) v gs , gate-source voltage (v) typical max 0.50 0.75 1.00 1.25 1.50 0 50 100 150 200 t j , junction temperature ( o c) v th , gate threshold voltage (v) -1.5mv/ o c 25 o c 125 o c 175 o c 5e-06 1e-05 2e-05 2e-05 3e-05 3e-05 4e-05 4e-05 0 500 1000 1500 2000 bv ds , drain-source blocking voltage (v) i d , drain leakage current (a) figure 11. gate threshold voltage v th = f(t j ), normalized figure 12. drain-source leakage i d = f(v ds ); v gs = 0v; parameter: t j
sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 5 advance information figure 13. switching energy losses e s = f(i d ); v ds = 850v; v gd = +15v, r gext = 20ohm; t c = 25 o c eon eoff ets 0 20 40 60 80 100 120 1234 i d , drain current (a) e, switching energy (uj) figure 14. inductive load switching circuit
sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 6 advance information mechanical drawing ordering information base part number configuration package junction temp. range processing ASJE1700R550 blank= non r isolated tab m=to r 258 r el blank s= isolated tab ex /v /s temp ranges: el= elevated temp. range, r 55 o c to 200 o c (t j ) ex= extreme temp. range, r 55 o c to 260 o c (t j ) (consult factory) processing: blank = commercial / standard processing mil r prf r 19500 equivalent screening available per scd /v= jantx mil r prf r 19500 equivalent (future standard offering) /s= jans mil r prf r 19500 equivalent (future standard offering) example part numbers: ASJE1700R550sm r el ASJE1700R550m r ex has commercial plastic versions of this product available. please refer to the semisouth website http://www.semisouth.com/products/products.html for datasheet speci cations and ordering information. the semisouth part number is sjep170r550 and is supplied in a to-247 plastic package. $ i a 4 y p " 3 # " 3 # note: 1. dimensions in mm (inches) 2. controlling dimensions (inches)
sic jfet ASJE1700R550 ASJE1700R550 rev. 0.1 06/11 micross components r eserves the right to change products or speci cations without notice. 7 advance information document title normally-off trench silicon carbide power jfet rev # history release date status 0.0 initial release december 2010 advance information 0.1 replaced to-257 package june 2011 advance information with to-258 package
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