sot-323 plastic-encapsulate mosfets CJ2102 n-channel 20-v(d-s) mosfet feature z trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: ts2 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 gate-source voltage v gs 8 v continuous drain current i d 2.1 continuous source-drain current(diode conduction) i s 0.6 a power dissipation p d 0.2 w thermal resistance from junction to ambient ( t 5s) r ja 625 /w operating junction t j 150 storage temperature t stg -55 ~+150 so t -323 1. gate 2. source 3. drain 1 of 2 sales@zpsemi.com www.zpsemi.com CJ2102
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =10a 20 gate-threshold voltage v gs(th) v ds =v gs , i d =50a 0.65 0.95 1.2 v gate-body leakage i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =20v, v gs =0v 1 a v gs =4.5v, i d =3.6a 0.045 0.060 drain-source on-resistance 1 r ds(on) v gs =2.5v, i d =3.1a 0.070 0.115 ? forward transconductance 1 g fs v ds =5v, i d =3.6a 8 s diode forward voltage v sd i s =0.94a,v gs =0v 0.76 1.2 v dynamic characteristics total gate charge q g 4.0 10 gate-source charge q gs 0.65 gate-drain charge q gd v ds =10v,v gs =4.5v,i d =3.6a 1.5 nc input capacitance 2 c iss 300 output capacitance 2 c oss 120 reverse transfer capacitance 2 c rss v ds =10v,v gs =0v,f=1mhz 80 pf switching characteristics 2 turn-on delay time t d (on) 7 15 rise time t r 55 80 turn-off delay time t d(off) 16 60 fall time t f v dd =10v, r l =5.5 ? , i d 3.6a, v gen =4.5v,rg=6 ? 10 25 ns notes : 1. pulse test : pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2 of 2 sales@zpsemi.com www.zpsemi.com CJ2102
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