p p je 8404 january 22,2015 - rev.02 page 1 3 0 v n - c hannel enhancement mode mosfet C esd protected voltage 3 0 v current 0.6 a sot - 5 23 unit : inch(mm) f eatures ? rds(on) , vgs@ 4,5 v , id@ 0.6 a< 220m ? ? rds(on) , vgs@ 2.5 v, id@ 0.4 a< 290m ? ? rds(on) , vgs@ 1.8 v, id@ 0. 1 a< 60 0m ? ? advanced trench process technology ? specially designed for switch load, pwm application, etc. ? esd protected 2kv hbm ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (hal ogen free) mechanical data ? case : sot - 5 2 3 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.00007 ounces, 0.002 grams ? marking : e0 4 parameter symbol limit units drain - source voltage v ds 30 v gate - source voltage v g s + 8 v continuous drain current i d 0.6 a pulsed drain current i dm 2.4 a power dissipation t a =25 o c p d 3 0 0 m w derate above 25 o c 2.4 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to a mbient (note 3 ) r ja 417 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p je 8404 january 22,2015 - rev.02 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source br eakdown voltage bv dss v gs = 0 v, i d = 25 0ua 3 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250 ua 0.5 0.79 1.3 v drain - source on - state resistance r ds(on) v gs = 4.5 v, i d = 0.6 a - 177 220 m gs = 2.5 v, i d = 0.4 a - 223 290 v gs = 1.8 v, i d = 0. 1 a - 3 3 0 60 0 zero gate voltage drain current i dss v ds = 30 v, v gs =0v - 0.01 1 u a gate - source leakage current i gss v gs = + 8 v, v ds =0v - + 1.5 + 10 u a dynamic (note 5 ) total gate charge q g v ds = 15 v, i d = 0.6 a, v gs = 4.5v (note 1 , 2 ) - 1.5 - nc gate - source charge q gs - 0.3 - gate - dra in charge q gd - 0.3 - input capacitance ciss v ds = 1 5v, v gs = 0 v, f=1.0mhz - 93 - pf output capacitance coss - 19 - reverse transfer capacitance crss - 6 - turn - on delay time t d (on) v dd = 1 5 v, i d = 0. 6 a, v g s = 4.5v, r g = 6 (note 1 , 2 ) - 6 - ns turn - on rise time tr - 33 - turn - o ff delay time t d (off) - 37 - turn - o ff fall time tf - 32 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 0.4 a diode forward voltage v sd i s = 1 a, v gs = 0 v - 0. 8 1 1. 2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper 4. the maximum current rating is package limited 5. guaranteed by design, not subject to product ion testing.
p p je 8404 january 22,2015 - rev.02 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p je 8404 january 22,2015 - rev.02 page 4 t ypical charac teristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage.
p p je 8404 january 22,2015 - rev.02 page 5 part no packing code version mounting pad layout part no packing code package type packing type m arking ver sion pje840 4 _r1_00001 sot - 523 4k pcs / 7 0.016 (0.40) 0 . 0 1 7 ( 0 . 4 5 ) 0 . 0 5 3 ( 1 . 3 5 ) 0.019 (0.50) 0.019 (0.50)
p p je 8404 january 22,2015 - rev.02 page 6 disclaimer
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