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resonantswitchingseries reverseconductingigbtwithmonolithicbodydiode IHW50N65R5 datasheet industrialpowercontrol
2 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 reverseconductingigbtwithmonolithicbodydiode features: ?powerfulmonolithicreverse-conductingdiodewithlowforward voltage ?trenchstop tm technologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowv cesat andlowe off -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinv cesat ?lowemi ?qualifiedaccordingtojesd-022fortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?inductioncooking ?inverterizedmicrowaveovens ?resonantconverters keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IHW50N65R5 650v 50a 1.35v 175c h50er5 pg-to247-3 g c e g c e
3 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 g c e g c e
4 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 80.0 50.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 150.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s - 150.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i f 37.0 22.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 150.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 282.0 141.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.53 k/w diode thermal resistance, junction - case r th(j-c) 2.29 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e
5 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =175c - - 1.35 1.60 1.70 - v diode forward voltage v f v ge =0v, i f =50.0a t vj =25c t vj =175c - - 1.70 2.00 2.10 - v gate-emitter threshold voltage v ge(th) i c =0.50ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 1250.0 40.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 120.0 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 6140 - output capacitance c oes - 55 - reverse transfer capacitance c res - 23 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =50.0a, v ge =15v - 230.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 30 - ns rise time t r - 20 - ns turn-off delay time t d(off) - 210 - ns fall time t f - 8 - ns turn-on energy e on - 1.50 - mj turn-off energy e off - 0.45 - mj total switching energy e ts - 1.95 - mj t vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =8.0 w , l s =45nh, c s =32pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 137 - ns diode reverse recovery charge q rr - 2.75 - c diode peak reverse recovery current i rrm - 37.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1100 - a/s t vj =25c, v r =400v, i f =50.0a, di f /dt =1100a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 29 - ns rise time t r - 22 - ns turn-off delay time t d(off) - 240 - ns fall time t f - 21 - ns turn-on energy e on - 1.76 - mj turn-off energy e off - 0.73 - mj total switching energy e ts - 2.49 - mj t vj =175c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =8.0 w , l s =45nh, c s =32pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 145 - ns diode reverse recovery charge q rr - 5.45 - c diode peak reverse recovery current i rrm - 60.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -2050 - a/s t vj =175c, v r =400v, i f =50.0a, di f /dt =1100a/s g c e g c e
7 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 figure 1. safeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 40 80 120 160 200 240 280 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 v ge = 20v 17v 15v 13v 11v 9v 8v 7v 6v g c e g c e
8 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 17v 15v 13v 11v 9v 8v 7v 6v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 t vj =25c t vj =175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 i c =10a i c =25a i c =50a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, r g(on) =8 w , r g(off) =8 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 20 40 60 80 100 1 10 100 1000 t d(off) t f t d(on) t r g c e g c e
9 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 60 70 80 1 10 100 1000 1e+4 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g(on) =8 w , r g(off) =8 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.5ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, r g(on) =8 w , r g(off) =8 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 20 40 60 80 100 0 1 2 3 4 5 6 7 e off e on e ts g c e g c e
10 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g(on) =8 w , r g(off) =8 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 e off e on e ts figure 15. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 20 v cc =130v v cc =520v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 3 6 9 12 15 18 21 24 27 30 10 100 1000 1e+4 c ies c oes c res g c e g c e
11 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 figure 17. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.1509923 2.0e-4 2 0.1847515 3.3e-3 3 0.1958118 0.0146925 4 6.0e-3 0.2126033 figure 18. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.7038717 1.4e-4 2 1.0081 3.7e-4 3 0.3567227 3.4e-3 4 0.2177746 0.01523878 5 8.5e-3 0.2085516 figure 19. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 600 700 800 900 1000 1100 1200 1300 50 75 100 125 150 175 200 225 250 t vj =25c, i f =50a t vj =175c, i f =50a figure 20. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 600 700 800 900 1000 1100 1200 1300 0 1 2 3 4 5 6 7 t vj =25c, i f =50a t vj =175c, i f =50a g c e g c e
12 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 figure 21. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 600 700 800 900 1000 1100 1200 1300 0 10 20 30 40 50 60 70 t vj =25c, i f =50a t vj =175c, i f =50a figure 22. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 600 700 800 900 1000 1100 1200 1300 -3000 -2700 -2400 -2100 -1800 -1500 -1200 -900 -600 -300 0 t vj =25c, i f =50a t vj =175c, i f =50a figure 23. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 15 30 45 60 75 90 105 120 135 150 t vj =25c t vj =175c figure 24. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i f =10a i f =25a i f =50a g c e g c e
13 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 g c e g c e pg-to247-3
14 IHW50N65R5 resonantswitchingseries rev.2.3,2014-12-16 g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
15 IHW50N65R5 resonant switching series rev. 2.3, 2014-12-16 revision history IHW50N65R5 previous revision revision date subjects (major changes since last revision) 1.1 2014-06-13 preliminary data sheet 1.2 2014-06-16 - 2.1 2014-09-12 final data sheet 2.2 2014-11-27 update of diode forward current values 2.3 2014-12-16 g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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