ams -g 2m t echnical specifications american microsemiconductor inc. page 1 of 2 1 33 kings road, madison, nj 07940 as/en/jisq/ 9100:2009 rev c and iso 9001:2008 certi ficate no: 45325 t el. 973 - 377 - 9566 fax . 973 - 377 - 3078 http://www.americanmicrosemiconductor.com f e a t u re s g l a s s pa ssi v at e d h i gh m a x i m u m oper at i ng t e m per atu r e l o w l eak age c u rr ent e xce l l ent s t a b i li t y g uar ant e ed a v a l a n c he en e r g y a b s o r pt i on c a pab i l i t y m e c h a n i c a l d a t a ca s e: s o d - 64 si nte r ed g l a s s c a s e t e r m i nal : p l at e d a xi al l e a d s s o l de r a b l e per m i l - s t d 202 e , m ethod 208c p o l a r i t y : c o l or b and den ot e s c athode e n d moun t i n g p o s i t i on: a n y m a xi m um r a t i n g s a nd e l e ctr i c a l c h a r a ct er is t i cs (s i ngl e - phas e, h a l f - w a v e, 6 0h z , r e s i s t i v e or i ndu c t i v e l oad r a t i n g at 25 c, u n l e s s othe r w i s e s tat e d) sym b o l by m26 e units m a x i m u m re c u rr en t pea k re vers e vo lt ag e v rrm 100 0 v m a x i m u m r ms vo lta g e v rms 700 v m a x i m u m d c b l o cki n g vo lt ag e v dc 100 0 v reve rs e b r ea k do w n vo lt a g e a t i r = 0 . 1 ma v (br)r 11 0 0 m i n v m a x i m u m a v e r ag e f o r wa r d re c tifi e d cu rr en t an d t tp =5 5 c ; l ea d l e n g t h= 1 0 m m i fav 2 . 3 a pea k fo r wa r d su r g e cu rrent a t t =10ms hal f si n e wav e i fsm 4 5 a m a x i m u m fo r wa r d v o lt age a t r a t e d fo r wa r d cu rrent and 2 5 c i f = 2 . 0 a v f 2 . 6 5 v m a x i m u m d c r e vers e cu rrent t a = 2 5 c a t r a t e d d c b l o cki n g volt age t a = 150 c i r 1 0 150 a a m a x i m u m r e vers e re c over y t i me ( no t e 1 ) t r r 7 5 n s no n r e pe titi v e re v e rs e ava l anc h e ene rg y e r 1 0 mj d i ode c a pa cit anc e a t f =1 m hz , v r =0 v c d 7 5 p f typ ic a l the r m a l re sist anc e ( no t e 2 ) r t h (j a) 7 5 k / w s t o r age a n d o per a tin g j un cti o n te m per a t u r e t s tg, t j - 6 5 t o +175 no t e : 1 . reve rs e re c o v e r y co n d iti o n i f = 0 . 5a , i r = 1 . 0a , i rr = 0 . 25a 2 . dev ic e m ounte d o n a n e pox y - g l a s s p ri n t ed - ci r c u i t boar d , 1 . 5 mm t h i c k ; t h i c k nes s o f cu - l ayer 4 0 m d imensions in millimeters
ams -g 2m t echnical specifications american microsemiconductor inc. page 2 of 2 1 33 kings road, madison, nj 07940 as/en/jisq/ 9100:2009 rev c and iso 9001:2008 certi ficate no: 45325 t el. 973 - 377 - 9566 fax . 973 - 377 - 3078 http://www.americanmicrosemiconductor.com
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