, u na.. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico p d owe r rectifie r "n^^ x \t^ / - c - notes : 1 n3 1 i \ ~i * r "h* ? 4 1 b e 1 % % % ^ i ; . j : : "i _ a ""'' ^ = 1 . ful l thread s withi n 2 1/ 2 threads . 2 . standar d polar ty : stu d i s cathod e revers e polarity ; stu d i s anod e ; i j i 1n317 7 i j 0 g ^ ( ii i 1 1 " dim . inche s millimete r .. . . . . . .. . minimu m moximu m minimu m moximu m note s a 3/4-1 6 un f 1 b 1.21 8 1.25 0 30.9 3 31.7 5 c 1.35 0 1.37 5 34.2 9 34.9 3 d 5.3 0 5.9 0 134.6 2 149.8 6 f .79 3 .82 8 20.1 4 21.0 3 g .30 0 .32 5 7.6 2 8.2 5 h .90 0 22.8 6 j .66 0 .74 5 16.7 6 19.0 2 2 k .33 8 .34 8 8.5 8 8.8 4 dia . w .66 5 .75 5 16.8 9 19.1 7 n .12 5 .17 2 3.1 8 4.3 7 r 1.1 0 27.9 4 dia . d0205a b (d09 ) pea k revers e catalo g numbe r n316 1 1n316 2 njlb. } n316 4 1n316 5 in316 6 n316 7 1n316 b 1n316 9 1n317 0 1n3171. a 1n3172. a 1n3173. a 1n3174.a 1 nji/ a 1n317 6 1n317 7 voltag e 50 v 100 v 150 v 200 v 250 v 300 v 350 v 400 v 500 v 600 v 700 v 800 v 900 v 1000 v 1200 v 1400 v 1600 v ad d r suffi x fo r revers e polarit y ? glas s t o meta l sea l constructio n ? hig h surg e curren t capabilit y ? glas s passivate d di e ? rugge d constructio n ? v rr m 50-160 0 volt s electrica l characteristic s wa x averag e forwar d curren t wa x surg e curren t wax . l^ t capabilit y fo r fusin g wa x pea k forwar d voltag e ma x pea k revers e current ma x pea k revers e curren t wa x recommende d operatin g frequenc y 'f(av ) 24 0 amp s ifs m 300 0 amp s '2 1 37,480 2 s vf w 1.2 5 volt s irr m 10m a ! rr w 75/u a 7. 5 kh z r c = 149c , hal f sin e wave . r 8j c = 0.20c/ w 8.3ms , hal f sine , t j = 200 c les s tha n 8.33m s if = 240a : tc = 25 c v rrm , t c = 150 c v rrm , t c = 25c therma l an d mechanica l operatin g junctio n temp rang e storag e temperatur e rang e waximu m therma l resistanc e typica l therma l resistanc e (greased ) wa x mountin g torgu e weigh t t j tst g r9j c k 6c s characteristic s -65 c t o 200 c -65 c t o 200 c 0.20c/ w junctio n t o cas e .08c/ w cas e t o sin k 300-32 5 inc h pounds 8. 5 ounce s (24 0 grams ) typica l n j semi-conductors reserve s th e righ t t o chang e tes t conditions , paramete r limits an d packag e dimension s withou t notice . informatio n furnishe d b > n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s us e n i semi-conductor s entourage s customer s t o verit y tha t datasheet s ar e curren t befor e p i icin g orders . rl i ?--?k * downloaded from: http:///
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