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absolute maximum ratings parameter units i d @ v gs = -4.5v, t c = 25c continuous drain current -0.53 i d @ v gs = -4.5v, t c = 100c continuous drain current -0.33 i dm pulsed drain current ? -2.12 p d @ t c = 25c max. power dissipation 0.6 w linear derating factor 0.0045 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy ? 3.5 mj i ar avalanche current ? -0.53 a e ar repetitive avalanche energy ? 0.06 mj dv/dt p eak diode recovery dv/dt ? -4.4 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 43 (t ypical ) mg pre-irradiation o c a radiation hardened IRHLUB7970Z4 logic level power mosfet surface mount (ub) 04/02/04 www.irf.com 1 60v, p-channel technology product summary part number radiation level r ds(on) i d IRHLUB7970Z4 100k rads (si) 1.2 ? -0.53a irhlub7930z4 300k rads (si) 1.2 ? -0.53a for footnotes refer to the last page ub international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. pd - 94764a features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight complimentary n-channel available - irhlub770z4
IRHLUB7970Z4 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -0.53 i sm pulse source current (body diode) ? ? ? -2.12 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -0.53a, v gs = 0v ? t rr reverse recovery time ? ? 50 ns t j = 25c, i f = -0.53a, di/dt -100a/ s q rr reverse recovery charge ? ? 25 nc v dd -25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -60 ? ? v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown ? -0.055 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.2 ? v gs = -4.5v, i d = -0.33a resistance v gs(th) gate threshold voltage -1.0 ? -2.0 v v ds = v gs , i d = -250 a g fs forward transconductance 0.8 ? ? s ( ) v ds = -10v, i ds = -0.33a ? i dss zero gate voltage drain current ? ? -1.0 v ds = -48v ,v gs =0v ? ? -10 v ds = -48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = -10v i gss gate-to-source leakage reverse ? ? 100 v gs =10v q g total gate charge ? ? 3.6 v gs = -4.5v, i d = -0.53a q gs gate-to-source charge ? ? 1.5 nc v ds = -30v q gd gate-to-drain (?miller?) charge ? ? 1.8 t d (on) turn-on delay time ? ? 18 v dd = -30v, i d = -0.53a, t r rise time ? ? 20 v gs =-4.5v, r g = 24 ? t d (off) turn-off delay time ? ? 15 t f fall time ? ? 25 l s + l d total inductance ? 8.4 ? measured from the center of drain pad to center of source pad c iss input capacitance ? 167 ? v gs = 0v, v ds = -25v c oss output capacitance ? 43 ? pf f = 1.0mhz c rss reverse transf er capacitance ? 10 ? na ? ? nh ns a r g gate resistance ? 29 ? ? f = 5.1mhz, open drain thermal resistance parameter min typ max units t est conditions r thja junction-to-ambient ? ? 220 c/w note: corresponding spice and saber models are available on international rectifier web site.
www.irf.com 3 pre-irradiation IRHLUB7970Z4 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -60 ? -60 ? v v gs = 0v, i d = -250a v gs(th) gate threshold voltage -1.0 -2.0 -1.0 -2.0 v gs = v ds , i d = -250a i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-10v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 10 v i dss zero gate voltage drain current ? -1.0 ? -10 a v ds =-48v, v gs =0v r ds(on) static drain-to-source ? ? 1.2 ? 1.2 ? v gs = -4.5v, i d =-0.33a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHLUB7970Z4 2. part number irhlub7930z4 international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. single event effect, safe operating area for footnotes refer to the last page v sd diode forward voltage ? ? -5.0 ? -5.0 v v gs = 0v, i s = -0.53a r ds(on) static drain-to-source ? ? 1.2 ? 1.2 ? v gs = -4.5v, i d =-0.33a on-state resistance (ub) -70 -60 -50 -40 -30 -20 -10 0 024681012 vgs vds br i au table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm2)) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v 2v 4v 5v 6v 7v 8v 10v br 37 285 36.8 -60 -60 -60 -60 -60 -50 -35 -25 i 60 345 32.7 -60 -60 -60 -60 -60 -20 - - au 82 357 28.5 -60 -60 -60 -60 - - - -
IRHLUB7970Z4 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15

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-i d , drain-to-source current ( ) "#$ + "$%& + "#$%& -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -0.53a
www.irf.com 5 pre-irradiation IRHLUB7970Z4 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage #)'$

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-i d , drain-to-source current (a) "#$%& !"$%& , , -./-00 /./1 00 by rds(on) 1 10 100 0 50 100 150 200 250 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 1 2 3 4 5 6 0 2 4 6 8 10 12 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.53a v = -12v ds v = -30v ds v = -48v ds
IRHLUB7970Z4 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0.0 0.1 0.2 0.4 0.5 0.6 t , case temperature ( c) -i , drain current (a) c d 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHLUB7970Z4 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge -4.5v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as v gs v dd + - 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.24a -0.34a -0.53a
IRHLUB7970Z4 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = - 25v, starting t j = 25c, l= 25mh peak i l = -0.53a, v gs = -10v ? i sd -0.53a, di/dt -100a/ s, v dd - 60v, t j 150c footnotes: case outline and dimensions ? ub 3.25 [.128] 2.82 [.115] 2.74 [.108] 2.41 [.085] 1.42 [.056] 0.97 [.046] 3x 0.355 [.014] mi n. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 1. out line conf orms t o mil-prf -19500/255l 2. all dime ns ions are s hown in millime t er s [inche s ]. 3. cont rolling dime ns ion: inch. not e s : 2 = s ource 1 = gate 3 = drain pad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2004

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