View IRG7PH35UD1-EP_8496177.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

insulated gate bipolar transistor with ultra-low vf diodefor induction heating and soft switching applications e g n-channel c v ces = 1200v i nominal = 20a t j(max) = 150c v ce(on) typ. = 1.9v benefits device optimized for induction heating and soft switching applications high efficiency due to low v ce(on) , low switching losses and ultra-low v f rugged transient performance for increased reliability excellent current sharing in parallel operation low emi g c e gate collector emitter to-247ac irg7ph35ud1pbf to-247ad IRG7PH35UD1-EP features low v ce (on) trench igbt technology low switching losses square rbsoa ultra-low v f diode 1300vpk repetitive transient capacity 100% of the parts tested for i lm positive v ce (on) temperature co-efficient tight parameter distribution lead free package 1 www.irf.com ? 2013 international rectifier april 24, 2013 g c e g g c e g irg7ph35ud1pbfIRG7PH35UD1-EP absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v (br) transient repetitive transient collector-to-emitter voltage 1300 i c @ t c = 25c continuous collector current 50 i c @ t c = 100c continuous collector current 25 i nominal nominal current 20 i cm pulse collector current, v ge =15v 150 a i lm clamped inductive load current, v ge =20v 80 i f @ t c = 25c diode continous forward current 50 i f @ t c = 100c diode continous forward current 25 i fm diode maximum forward current 80 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 179 w p d @ t c = 100c maximum power dissipation 71 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.70 r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 1.35 c/w r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC 40 CCC v base part number package type orderable part number form quantity irg7ph35ud1pbf to-247ac tube 25 irg7ph35ud1pbf IRG7PH35UD1-EP to-247ad tube 25 IRG7PH35UD1-EP standard pack downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 2 irg7ph35ud1pbf/IRG7PH35UD1-EP notes: v cc = 80% (v ces ), v ge = 20v, r g = 10 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j approximately 90c. fbsoa operating conditions only. v ge = 0v, t j = 75c pw 10 s electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 100 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 1.2 v/c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.9 2.2 v i c = 20a, v ge = 15v, t j = 25c 2 . 3 i c = 20a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v v ce = v ge , i c = 600 a gfe forward transconductance 22 s v ce = 50v, i c = 20a, pw = 30 s i ces collector-to-emitter leakage current 1.0 100 av ge = 0v, v ce = 1200v 120 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop 1.15 1.26 v i f = 20a 1 . 0 8 i f = 20a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 85 130 i c = 20a q ge gate-to-emitter charge (turn-on) 15 20 nc v ge = 15v q gc gate-to-collector charge (turn-on) 35 50 v cc = 600v i c = 20a, v cc = 600v, v ge = 15v e off turn-off switching loss 620 850 jr g = 10 , l = 200 h,l s = 150nh, t j = 25c energy losses include tail t d(off) turn-off delay time 160 180 ns i c = 20a, v cc = 600v, v ge = 15v t f fall time 80 105 r g = 10 , l = 200 h,l s = 150nh, t j = 25c i c = 20a, v cc = 600v, v ge =15v e off turn-off switching loss 1120 jr g = 10 , l = 200 h,l s = 150nh, t j = 150c energy losses include tail t d(off) turn-off delay time 190 ns i c = 20a, v cc = 600v, v ge = 15v t f fall time 210 r g = 10 , l = 200 h,l s = 150nh, t j = 150c c ies input capacitance 1940 pf v ge = 0v c oes output capacitance 120 v cc = 30v c res reverse transfer capacitance 40 f = 1.0mhz t j = 150c, i c = 80a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 , v ge = +20v to 0v conditions downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 3 irg7ph35ud1pbf/IRG7PH35UD1-EP fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 6 - typ. igbt output characteristics t j = 25c; tp = 30 s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 30 s fig. 4 - reverse bias soa t j = 150c; v ge = 20v 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - typical gate threshold voltage (normalized) vs. junction temperature 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 25 50 75 100 125 150 t j , temperature (c) 0.5 0.6 0.7 0.8 0.9 1.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 600 a 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 i c ( a ) 25 50 75 100 125 150 t c (c) 0 25 50 75 100 125 150 175 200 p t o t ( w ) downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 4 irg7ph35ud1pbf/IRG7PH35UD1-EP fig. 12 - typ. transfer characteristics v ce = 50v; tp = 30 s fig. 11 - typical v ce vs. v ge t j = 150c fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 8 - typ. diode forward voltage drop characteristics 0.0 0.5 1.0 1.5 2.0 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) 25c 150c fig. 7 - typ. igbt output characteristics t j = 150c; tp = 30 s 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 4 8 12 16 20 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 4567891 0 v ge, gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 150c t j = 25c downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 5 irg7ph35ud1pbf/IRG7PH35UD1-EP fig. 18 - typical gate charge vs. v ge i ce = 20a; l = 2.4mh fig. 14 - typ. switching time vs. i c t j = 150c; l = 680 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 680 h; v ce = 600v, i ce = 20a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 680 h; v ce = 600v, i ce = 20a; v ge = 15v fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 0 25 50 75 100 125 rg ( ) 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 e n e r g y ( j ) e off 0 20 40 60 80 100 120 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f fig. 13 - typ. energy loss vs. i c t j = 150c; l = 680 h; v ce = 600v, r g = 10 ; v ge = 15v 0 1 02 03 04 05 0 i c (a) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 e n e r g y ( j ) e off 0 10 20 30 40 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 6 irg7ph35ud1pbf/IRG7PH35UD1-EP fig 19. maximum transient thermal impedance, junction-to-case (igbt) fig. 20. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.017 0.0000130.218 0.000141 0.299 0.002184 0.177 0.013107 ri (c/w) i (sec) 0.00756 0.0000050.56517 0.000677 0.54552 0.003514 0.25085 0.019551 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 7 irg7ph35ud1pbf/IRG7PH35UD1-EP fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - bvces filter circuit fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 v cc 0 1k vcc dut l l rg 80 v dut vcc + - l rg vcc dut / driver diode clamp / dut -5v g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense -100 0 100 200 300 400 500 600 700 800 - 0 . 500 . 511 . 52 time( s) v ce (v) -5 0 5 10 15 20 25 30 35 40 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 8 irg7ph35ud1pbf/IRG7PH35UD1-EP

ye ar 1 = 2001 dat e code part number internat ional logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s e mb l e d on ww 35, 2001 note: "p" in assembly line position example: wi t h as s e mb l y this is an irfpe30 lot code 5657 to-247ac package is not recommended for surface mount application.

downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 9 irg7ph35ud1pbf/IRG7PH35UD1-EP assembly year 0 = 2000 as s embled on ww 35, 2000 in the assembly line "h" example: t his is an irgp30b 120kd-e lot code 5657 with assembly part number dat e code int ernational rect ifier logo 035h 56 57 week 35 line h lot code note: "p" in as s embly line pos ition i ndi cates "l ead- f r ee"

to-247ad package is not recommended for surface mount application.

downloaded from: http:///
www.irf.com ? 2013 international rectifier april 24, 2013 10 irg7ph35ud1pbf/IRG7PH35UD1-EP moisture sensitivity level to-247ac n/a to-247ad n/a rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f) ?? yes

!"#"$
ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . date comments 4/19/2013 document updated to new ir corporate template revision history downloaded from: http:///

▲Up To Search▲

Price & Availability of IRG7PH35UD1-EP

	To Download IRG7PH35UD1-EP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .