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cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 1 / 16 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. char mille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 27 - 33.5ghz medium power amplifier gaas monolithic microwave ic in smd leadless package description the cha3396 - qdg is a 3 s tage monolithic medium power amplifier , which produces 22db gain for 19 dbm output power . it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it i s supplied in rohs compliant smd package. main features output power & pae versus frequency main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 27 .0 33 .5 ghz gain linear gain 2 2 db p - 1db output power @1db comp. 19 db m otoi 3 rd order intercept point 3 0 dbm ums a3396 yyww ? ? 10 12 14 16 18 20 22 24 26 28 30 23 24 25 26 27 28 29 30 31 32 33 34 output power (dbm), pae (%) frequency (ghz) psat p - 1db pae sat ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 2 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = +4.0 v symbol parameter min typ max unit freq frequency range 27 33.5 ghz gain linear gain 22 db g ctrl gain control range 15 db otoi 3 rd order intercept point 30 dbm p - 1 db output power @ 1db compression 19 dbm psat saturated output power 21 dbm rlin input return loss 10 db rl out out put return loss 13 db nf noise figure 4.5 db id quiescent drain current 155 ma vg gate voltage - 0.35 v these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board".
27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 3 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4.5 v v id drain bias quiescent current 200 ma vg gate bias voltage - 2 to +0.4 v pin maximum input power 6 dbm tj junction temperature (2) 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) thermal resistance channel to ground paddle = 100.9 c/w for tamb. = +85c with 4.0 v & 155 ma. typical bias conditions tamb.= +25c symbol pad n o parameter values unit vg1 8 dc gate voltage 1 st stage - 0. 35 v vg2 9 dc gate voltage 2 nd stage - 0. 35 v vg3 10 dc gate voltage 3 rd stage - 0. 35 v vd1 23 dc drain voltage 1 st stage 4.0 v vd2 22 dc drain voltage 2 nd stage 4.0 v vd3 21 dc drain voltage 3 rd stage 4.0 v
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 4 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature can not be maintained below the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf). recommended max. junction temperature (tj max) : 148 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power (pdiss. max.) : 0.6 w => pdiss. max. derating above tcase (1) = 85 c : 10 mw/c junction-case thermal resistance (rth j-c) (2) : <100 c/w minimum tcase operating temperature (3) : -40 c maximum tcase operating temperature (3) : 85 c minimum storage temperature : -55 c maximum storage temperature : 150 c (1) derating at junctio n temperature co nstant = tj max. (2) rth j-c is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the m m ic and all the devices biased. (3) tcase=p ackage back side temperature measured under the die-attach-pad (see the drawing belo w). device thermal specification : cha3396-qdg 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 175 pdiss. max. @tj 27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 5 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters tamb.= +25c , vd = +4v, id = 155 ma freq (ghz) s11 (db) phs11 () s21 (db) phs21 () s12 (db) phs12 () s22 (db) phs22 () 2 - 0.177 135.6 - 67.577 20.7 - 67.178 34.5 - 0.962 108.6 3 - 0.249 113.5 - 66.628 11.6 - 64.533 - 2.4 - 1.094 71.9 4 - 0.306 90.9 - 66.419 20.1 - 66.730 - 15.2 - 1.267 34.2 5 - 0.374 68.4 - 61.518 10.3 - 71.920 - 38.2 - 1.453 - 3.4 6 - 0.478 45.9 - 53.854 - 31.1 - 71.094 92.0 - 1.688 - 42.0 7 - 0.614 23.3 - 43.534 - 85.5 - 61.481 58.6 - 2.020 - 81.2 8 - 0.711 1.4 - 33.949 - 170.4 - 58.074 22.8 - 2.652 - 121.3 9 - 0.908 - 20.5 - 26.532 116.7 - 52.430 - 24.8 - 3.367 - 163.5 10 - 1.008 - 41.9 - 20.149 47.3 - 52.007 - 78.0 - 4.663 152.3 11 - 1.109 - 63.1 - 14.839 - 21.7 - 51.030 - 140.2 - 6.852 106.2 12 - 1.111 - 84.1 - 12.112 - 91.4 - 52.842 168.9 - 8.188 72.4 13 - 1.118 - 105.5 - 9.836 - 145.6 - 54.224 119.1 - 8.950 28.3 14 - 1.110 - 127.4 - 7.538 167.5 - 52.192 131.3 - 9.428 - 14.8 15 - 1.178 - 150.8 - 5.046 120.8 - 48.327 77.1 - 10.532 - 55.3 16 - 1.228 - 173.9 - 2.488 76.5 - 49.967 44.3 - 12.115 - 93.0 17 - 1.284 161.5 0.190 32.5 - 46.997 18.8 - 14.194 - 129.4 18 - 1.367 136.7 2.997 - 11.0 - 48.992 - 2.1 - 16.885 - 168.3 19 - 1.541 109.7 5.939 - 55.7 - 48.651 - 16.3 - 21.242 151.8 20 - 1.765 81.9 8.897 - 101.6 - 51.248 - 22.7 - 28.518 111.7 21 - 2.027 53.3 11.893 - 149.9 - 50.772 - 26.7 - 35.954 - 109.2 22 - 2.409 23.3 14.859 159.2 - 52.372 - 30.4 - 22.292 - 152.1 23 - 3.099 - 7.9 17.571 104.6 - 50.227 - 21.7 - 16.442 157.5 24 - 4.313 - 39.8 19.646 47.8 - 48.337 - 23.6 - 13.242 114.4 25 - 5.869 - 72.3 21.219 - 10.3 - 48.669 - 33.3 - 11.683 72.7 26 - 8.557 - 109.6 22.154 - 68.0 - 44.901 - 39.4 - 11.452 36.9 27 - 12.434 - 139.6 22.757 - 123.6 - 43.561 - 33.3 - 12.756 1.8 28 - 16.855 - 179.1 23.288 179.6 - 38.962 - 51.3 - 14.025 - 32.4 29 - 25.143 157.1 23.436 123.5 - 37.464 - 88.5 - 16.954 - 82.6 30 - 43.068 141.2 23.316 65.7 - 35.734 - 110.1 - 21.978 - 167.0 31 - 23.546 - 101.3 22.507 9.3 - 35.719 - 128.1 - 24.820 159.2 32 - 17.647 - 132.3 21.717 - 45.1 - 34.429 - 155.4 - 28.188 129.0 33 - 11.284 - 161.2 21.245 - 95.9 - 35.382 162.9 - 18.619 - 180.0 34 - 8.198 167.9 20.909 - 156.4 - 37.963 138.1 - 12.747 146.1 35 - 5.091 141.7 19.425 139.1 - 42.719 109.8 - 8.483 122.3 36 - 3.086 111.1 16.200 75.2 - 55.617 106.5 - 5.934 87.2 37 - 1.780 83.2 12.163 20.9 - 49.723 - 158.7 - 4.789 57.0 38 - 1.272 59.2 8.109 - 26.9 - 42.745 - 171.0 - 4.701 27.7 39 - 0.999 38.2 4.609 - 71.0 - 39.377 170.3 - 5.397 - 2.6 40 - 0.868 19.8 1.638 - 116.5 - 36.317 138.4 - 8.063 - 37.6 refer to the paragraph definition of the sij reference planes
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 6 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +4.0v, id = 155 ma these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". linear gain versus frequency in temperature return losses versus frequency 10 12 14 16 18 20 22 24 26 28 30 23 24 25 26 27 28 29 30 31 32 33 34 gain (db) frequency (ghz) - 40 c 25 c 85 c - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 23 24 25 26 27 28 29 30 31 32 33 34 return loss (db) frequency (ghz) rl in rl out
27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 7 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = + 4.0v, id = 155 ma input return loss versus gain ctrl output return loss versus gain ctrl linear gain & c urrent versus g ate v oltage - 24 - 20 - 16 - 12 - 8 - 4 0 23 25 27 29 31 33 input return loss (db) frequency (ghz) max. gain min . gain - 32 - 28 - 24 - 20 - 16 - 12 - 8 - 4 0 23 24 25 26 27 28 29 30 31 32 33 34 output return loss (db) frequency (ghz) max. gain min. gain 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 - 1 - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 - 0.3 drain current (a) gain (db) gate voltage (v) 27.5 ghz 29.5 ghz 31.5 ghz 33.5 ghz id
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 8 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = + 4.0v, id = 155 ma noise figure versus temperature noise figure & c urrent versus g ate v oltage 0 1 2 3 4 5 6 7 8 9 10 24 25 26 27 28 29 30 31 32 33 34 35 36 noise figure (db) frequency (ghz) - 40 c 25 c 85 c 0 50 100 150 200 250 300 350 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 - 1 - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 - 0.3 drain current (ma) noise figure (db) gate voltage (v) 27 ghz 30 ghz 34 ghz id
27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 9 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +4.0v, id = 155 ma output p ower & pae versus frequency pout at 1db compression versus t emperature 15 16 17 18 19 20 21 22 23 24 25 26 23 24 25 26 27 28 29 30 31 32 33 34 output power at 1db comp. (dbm) frequency (ghz) 85 c 25 c - 40 c 10 12 14 16 18 20 22 24 26 28 30 23 24 25 26 27 28 29 30 31 32 33 34 output power (dbm), pae (%) frequency (ghz) psat p - 1db pae sat
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 10 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = + 4.0v, id = 155 ma output toi versus output power dcl imd3 versus output power dcl 24 26 28 30 32 34 36 38 40 - 2 0 2 4 6 8 10 12 14 16 18 20 output toi (dbm) output power dcl (dbm) 27.5 ghz 29.5 ghz 31.5 ghz 33.5 ghz 20 25 30 35 40 45 50 55 60 65 70 75 80 - 2 0 2 4 6 8 10 12 14 16 18 20 imd3 (dbc) output power dcl (dbm) 27.5 ghz 29.5 ghz 31.5 ghz 33.5 ghz
27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 11 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = + 4.0v, id = 155 ma imd3 versus temperature at 31 .5ghz imd3, 5 & 7 versus output power dcl 1 - 10 20 30 40 50 60 70 80 90 100 - 2 0 2 4 6 8 10 12 14 16 18 20 imd3 (dbc) output power dcl (dbm) - 40 c 85 c 25 c 10 20 30 40 50 60 70 80 90 100 - 2 0 2 4 6 8 10 12 14 16 18 20 imd (dbc) output power dcl (dbm) imd3 imd5 imd7
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 12 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt e tin, lead free (green) 1 - nc 9 - vg2 17 - gnd (2) units : mm 2 - gnd (2) 10 - vg3 18 - nc from the standard : jedec mo - 220 3 - gnd (2) 11 - nc 19 - nc (vgg d) 4 - rf in 12 - nc 20 - gnd (2) 25 - gnd 5 - gnd (2) 13 - gnd (2) 21 - vd3 6 - gnd (2) 14 - gnd (2) 22 - vd2 7 - nc 15 - rf out 23 - vd1 8 - vg1 16 - gnd (2) 24 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 13 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". sij m easurement s are made in probes configuration with a dedicated board, without rf connectors . esd sensitivity standard value mil - std - 1686c hbm class 1 esd stm5.1 - 1998 hbm class 1a package information parameter value package body material rohs - compliant low stress injection molded plastic lead finish 100% matt e tin ( sn ) msl rating msl1 3.18 3.18
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 14 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
27 - 33.5ghz medium power amplifier cha3396 - qdg ref. : dscha3396 - qdg5260 - 17 sep 15 15 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes due to esd protection circuits on rf input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the rf accesses. esd protections are also implemented on all dc accesses. the dc connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling on the pc board, as close as possible to the package. dc schematic 4v, 155 ma 26 ? 18 ? 7 ? in out d1 30ma 465 ? 465 ? 465 ? g1 d2 54 ma g2 g3 71ma d3 x3 x1 x3 x1 x3 x1 x1 x7 x1 x7 x1 x7
cha3396 - qdg 27 - 33.5ghz medium power amplifier ref. : dscha3396 - qdg5260 - 17 sep 15 16 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suit able reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environme ntal data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 4x4 package: cha3396 - qdg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without noti ce. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from un ited monolithic semiconductors s.a.s.

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