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sh8k25 40v nch+nch middle mosfet datasheet ll outline v dss 40v sop8 r ds(on) (max.) 85m i d 5.2a p d 2w ll features ll inner circuit 1) low on - resistance. 2) small surface mount package . 3) pb-free lead plating ; rohs compliant. 4) halogen free. ll packaging specifications type packing embossed tape ll application reel size (mm) 330 switching tape width (mm) 12 basic ordering unit (pcs) 2500 taping code tb marking sh8k25 ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 40 v continuous drain current i d *1 5.2 a pulsed drain current i d, pulse *2 8 a gate - source voltage v gss 12 v avalanche energy, single pulse e as *3 0.48 mj avalanche current i as *3 8 a power dissipation total p d *4 2 w p d *1 3 element p d *4 1.4 junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - 89.3 - ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 40 - - v breakdown voltage temperature coefficient v (br)dss i d = 1ma - 27.3 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 40v, v gs = 0v - - 1 a gate - source leakage current i gss v ds = 0v, v gs = 12v - - 10 a gate threshold voltage v gs(th) v ds = 10v, i d = 1ma 1.0 - 2.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1ma - -4.6 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *5 v gs = 10v, i d = 5.2a - 60 85 m v gs = 4.5v, i d = 4.0a - 80 112 transconductance g fs v ds = 10v, i d = 4a 1.0 - - s *1 pw 1s, limited only by maximum temperature all owed. *2 pw 10s, duty cycle 1% *3 l ? 10h, v dd = 20v, r g = 25, starting t ch = 25 fig.3-1,3-2 *4 mounted on a ceramic board *5 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 100 - pf output capacitance c oss v ds = 10v - 50 - reverse transfer capacitance c rss f = 1mhz - 15 - turn - on delay time t d(on) *5 v dd ? 20v,v gs = 10v - 6 - ns rise time t r *5 i d = 2a - 5 - turn - off delay time t d(off) *5 r l = 10 - 17 - fall time t f *5 r g = 10 - 3 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *5 v dd ? 20v, i d = 4a v gs = 5v - 1.7 - nc gate - source charge q gs *5 - 0.9 - gate - drain charge q gd *5 - 0.3 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 1.6 a body diode pulse current i sp *2 - - 8 forward voltage v sd v gs = 0v, i s = 4a - - 1.2 v www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristic curves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 tranceconductance vs. drain current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristic curves fig. 11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristic curves fig. 1 4 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 static drain - source on - state resistance vs. drain current(iii) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll electrical characteristic curves fig. 1 7 typical capacitance vs. drain - source voltage fig.18 switching characteristics fig.19 dynamic input characteristics fig.20 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll measurement circuits fig.1-1 switching time measurement circuit fig.1-2 s witching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalan che waveform www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150730 - rev.002 downloaded from: http:///
sh8k25 datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150730 - rev.002 downloaded from: http:///
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