dmp2200udw document number: ds37689 rev. 1 - 2 1 of 6 www.diodes.com february 2015 ? diodes incorporated dmp 2200 u dw advance information dual p-channel enhancement mode mosfet summary v (br)dss r ds(on) max i d max -20v 260m @v gs = -4.5v -0.9 a 500m @v gs = -2.5v 1000m @v gs = -1.8v description this mosfet is designed to minimize the on-state re sistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency power management applicat ions. applications ? battery disconnect switch ? load switch for power management functions features ? low r ds(on) ? minimizes conduction losses ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot363 ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish - matte tin annealed over alloy 42 l eadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmp2200udw-7 sot363 3,000/tape & reel DMP2200UDW-13 sot363 10,000/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <90 0ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http ://www.diodes.com. marking information sot363 date code key year 2014 2015 2016 2017 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct n ov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 top view top view pin out esd protected p22 = marking code ym = date code marking y or y= year (ex: b = 2014) m = month (ex: 9 = september) s 1 d 1 d 2 s 2 g 1 g 2 d1 s1 g1 gate protection diode d2 s2 g2 gate protection diode q1 p-channeal q2 p-channeal
dmp2200udw document number: ds37689 rev. 1 - 2 2 of 6 www.diodes.com february 2015 ? diodes incorporated dmp 2200 u dw advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 6) t a = +25c t a = +85c i d -0.9 -0.7 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 0.45 w total power dissipation (note 6) 0.6 w thermal resistance, junction to ambient (note 5) steady state r ja 275 c/w thermal resistance, junction to ambient (note 6) steady state 208 thermal resistance, junction to case r j c 72 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? -1 a v ds = -16v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) -0.4 ? -1.2 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ? 180 240 320 260 500 1,000 m v gs = -4.5v, i d = -0.88a v gs = -2.5v, i d = -0.71a v gs = -1.8v, i d = -0.20a diode forward voltage v sd ? -0.8 -1.2 v v gs = 0v, i s = -0.48a dynamic characteristics (note 8) input capacitance c iss ? 184 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 26.4 ? pf reverse transfer capacitance c rss ? 18.5 ? pf gate resistance r g ? 221 ? v ds = v gs = 0v,f = 1.0mhz total gate charge q g ? 2.1 ? nc v gs = -4.5v, v ds = -10v, i d = -1.7a gate-source charge q gs ? 0.4 ? nc gate-drain charge q gd ? 0.5 ? nc turn-on delay time t d(on) ? 9.8 ? ns v dd = -10v, i d = -1.5a, v gs = -4.5v, r gen = 1 turn-off delay time t d(off) ? 24.4 ? ns turn-on rise time t r ? 88 ? ns turn-off fall time t f ? 45 ? ns notes: 5. device mounted on fr-4 substrate pc board , 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz c opper, with 1inch square copper plate. 7. short duration pulse test used to minimize self- heating effect. 8. guaranteed by design. not subject to product tes ting.
dmp2200udw document number: ds37689 rev. 1 - 2 3 of 6 www.diodes.com february 2015 ? diodes incorporated dmp 2200 u dw advance information 0.0 1.0 2.0 3.0 4.0 5.0 0 1 2 3 4 5 i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic v = -3.0v gs v = -4.5v gs v = -8.0v gs v = -1.2v gs v = -1.8v gs v = -2.0v gs v = -1.5v gs 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics v = -5.0v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3 0 1 2 3 4 5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = -2.5v gs v = -4.5v gs 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0 1 2 3 4 5 6 7 8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s(on ) v , gate-source voltage (v) gs figure 4 typical transfer characteristics i = -0.88a d i = -0.71a d 0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.32 0.34 0 1 2 3 4 5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature v = -4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e ds(o n) o n-resi sta nce (normalized) t , junction temperature ( c) j figure 6 on-resistance variation with temperature v = -2.5v gs i = -0.71a d v = -4.5v gs i = -0.88a d
dmp2200udw document number: ds37689 rev. 1 - 2 4 of 6 www.diodes.com february 2015 ? diodes incorporated dmp 2200 u dw advance information 0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.32 0.34 0.36 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) t , junction temperature ( c) j figure 7 on-resistance variation with temperature v = -2.5v gs i = -0.71a d v = -4.5v gs i = -0.88a d 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) t , junction temperature ( c) j figure 8 gate threshold variation vs. junction temperature i = -250a d i = -1ma d 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t = 125c a t = 55c a t = 85c a t = 150c a t = 25c a 10 100 1000 0 5 10 15 20 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance f = 1mhz c iss c oss c rss 0 1 2 3 4 5 6 7 8 0 1 2 3 4 v g a t e t h r e s h o l d v o l t a g e ( v ) gs q , total gate charge (nc) g figure 11 gate charge v = -10v ds i = -1.7a d 0.01 0.1 1 10 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d -v , drain-source voltage (v) ds figure 12 soa, safe operation area dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w r ds(on) limited t = 150c j (m ax ) t = 25c a v = 4.5v gs single pulse dut on 1 * mrp board
dmp2200udw document number: ds37689 rev. 1 - 2 5 of 6 www.diodes.com february 2015 ? diodes incorporated dmp 2200 u dw advance information 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13 transient thermal resistance d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ja ja r = 271c/w ja duty cycle, d = t1/ t2 package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sot363 dim min max typ a 0.10 0.30 0.25 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d 0.65 typ f 0.40 0.45 0.425 h 1.80 2.20 2.15 j 0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.22 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 x z y c1 c2 c2 g a m j l d b c h k f
dmp2200udw document number: ds37689 rev. 1 - 2 6 of 6 www.diodes.com february 2015 ? diodes incorporated dmp 2200 u dw advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product d escribed herein; neither does diodes incorporated co nvey any license under its patent or trademark rights, nor the rights of others. any cus tomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products a re represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any l iability whatsoever in respect of any products purc hased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized applic ation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and at torney fees arising out of, directly or indirectly, any claim of personal injury or death as sociated with such unintended or unauthorized applic ation. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more unit ed states, international or foreign trademarks. this document is written in english but may be trans lated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes in corporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of d iodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perf orm when properly used in accordance with instructio ns for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications o f their life support devices or systems, and acknowledge and agree that they are solely responsib le for all legal, regulatory and safety-related req uirements concerning their products and any use of diodes incorporated products in such safety-c ritical, life support devices or systems, notwithst anding any devices- or systems-related information or support that may be provided by diode s incorporated. further, customers must fully indem nify diodes incorporated and its representatives against any damages arising out of t he use of diodes incorporated products in such safe ty-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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