savantic semiconductor product specification silicon pnp power transistors BDW47 d escription with to-220c package complement to type bdw42 darlington high dc current gain low collector saturation voltage applications for general purpose and low speed switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -15 a i b base current -0.5 a p d total power dissipation t c =25 85 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.47 /w
savantic semiconductor product specification 2 silicon pnp power transistors BDW47 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-30ma, i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-5a ,i b =-10ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-10a ,i b =-50ma -3.0 v v be base-emitter on voltage i c =-10a ; v ce =-4v -3.0 v i cbo collector cut-off current v cb =-100v, i e =0 -1.0 ma i ceo collector cut-off current v ce =-50v, i b =0 -2.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-5a ; v ce =-4v 1000 h fe-2 dc current gain i c =-10a ; v ce =-4v 250 f t transition frequency i c =-3a ; v ce =-3v;f=1mhz 4.0 mhz c ob output capacitance i e =0 ; v cb =-10v;f=0.1mhz 300 pf
savantic semiconductor product specification 3 silicon pnp power transistors BDW47 package outline fig.2 outline dimensions
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