QEE273 ?plastic infrared light emitting diode ?009 fairchild semiconductor corporation www.fairchildsemi.com QEE273 rev. 1.0.0 october 2009 pa ckage dimensions QEE273 plastic infrared light emitting diode features = 850nm package type = sidelooker chip material = algaas matched photosensor: qse213 and qse243 medium wide emission angle, 30 package material: clear epoxy high output power description the QEE273 is an 850nm algaas led encapsulated in a medium wide angle, thin plastic sidelooker package. pa ck ag e dimensions anode cathode cathode 0.174 (4.44) 0.060 (1.50) 0.030 (0.76) 0.047 (1.20) 0.177 (4.51) 0.224 (5.71) 0.5 (12.7) 0.060 (1.52) min 0.020 (0.51) sq. (2x) 0.100 (2.54) r 0.030 (0.76) notes: 1. dimensions of all drawings are in inches (mm). 2. tolerance is ?.010 (0.25) on all non-nominal dimensions unless otherwise specified. schematic
?009 fairchild semiconductor corporation www.fairchildsemi.com QEE273 rev. 1.0.0 2 QEE273 ?plastic infrared light emitting diode absolute maximum ratings (t a = 25? unless otherwise specified) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. notes: 1. derate power dissipation linearly 1.33mw/? above 25?. 2. rma flux is recommended. 3. methanol or isopropyl alcohols are recommended as cleaning agents. 4. soldering iron 1/16" (1.6mm) minimum from housing. electrical / optical characteristics (t a = 25?) symbol parameter rating units t opr operating temperature -40 to +100 ? t stg storage temperature -40 to +100 ? t sol-i soldering temperature (iron) (2,3,4) 240 for 5 sec ? t sol-f soldering temperature (flow) (2,3) 260 for 10 sec ? i f continuous forward current 50 ma v r reverse voltage 5 v p d po w er dissipation (1) 100 mw symbol parameter test conditions min. typ. max. units pe p eak emission wavelength i f = 20ma 850 nm tc t emperature coef?ient 0.2 nm / ? 2 1 /2 emission angle i f = 100ma 30 v f f orward voltage i f = 100ma, tp = 20ms 1.8 v tc vf t emperature coef?ient -1 mv / ? i r reverse current v r = 5v 10 ? i e radiant intensity i f = 100ma, tp = 20ms 18 27 36 mw/sr tc ie t emperature coef?ient -0.33 % / ? t r rise time i f = 100ma 11 ns t f f all time 12 ns c j j unction capacitance v r = 0v 22 pf
?009 fairchild semiconductor corporation www.fairchildsemi.com QEE273 rev. 1.0.0 3 QEE273 ?plastic infrared light emitting diode typical performance curves fig. 3 relative power vs. forward current i f ?forward current (ma) relative power 0 100 200 300 400 500 600 700 800 900 1000 1100 12 10 8 6 4 2 0 normalized to: i f = 100ma pulsed t pw = 20ms duty cycle = 4% t a = 25 c 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 fig. 6 radiation diagram fig. 1 normalized intensity vs. wavelength (nm) normalized intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 700 0.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 750 800 850 900 950 1,000 1,050 i f = 20ma pulsed t pw = 20ms duty cycle = 4% 1.2 1.0 0.8 0.6 0.4 0.2 0.0 t a ?ambient temperture ( c) fig. 2 peak wavelength vs. ambient temperature pe ? peak emission wavelength 0102 03040506070 875 870 965 960 855 850 845 840 835 80 90 100 i f = 20ma dc t a ?ambient temperture ( c) fig. 4 relative power vs. ambient temperature relative power -15 0 15 30 4 5607590 105 normalized to: i f = 20ma pulsed t pw = 20ms duty cycle = 4% t a = 25 c 2.5 2.0 1.5 1.0 0.5 0 t a ?ambient temperture ( c) fig. 5 forward voltage vs. ambient temperature v f ? forward voltage (v) -15 0 15 30 4 5607590 105
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