2011. 5. 25 1/8 semiconductor technical data KGT50N60KDA revision no : 0 general description kec npt trench igbts offer low switching losses, high energy efficiency and short circuit ruggedness. it is designed for applications such as motor control, uninterrupted power supplies(ups), general inverters. features h high speed switching h high system efficiency h short circuit withstand times ! 10us h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g c e characteristic symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 100 a @tc=100 ? 50 a pulsed collector current i cm * 150 a diode continuous forward current @tc=100 ? i f 50 a diode maximum forward current i fm 100 a maximum power dissipation @tc=25 ? p d 345 w @tc=100 ? 138 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r th jc 0.36 ? /w thermal resistance, junction to case (diode) r th jc 1.0 ? /w thermal resistance, junction to ambient r th ja 40 ? /w thermal characteristic e c g j 77 k + x k 7 9 q z wtawyb =yw-bttttbwjb s ywbbttttbw*b s *bwlyttttbwjb s jwbbttttbw*b s *wbbttttbw*b s =w*bttttbw*b s *bw=btttttbwob s bwmbttttbwb* s *wbbttttbw=b s =awobttttbw*b s *wabttttbw*b s ywayttttbwjb s jwmbttttbwjb s jwmbttttbw*b s ow=-ttttbw=b s z x + =*j k 7 9 q h*ao j
2011. 5. 25 2/8 KGT50N60KDA revision no : 0 electrical characteristics (ta=25 ? ) marking note 1 : energy loss include tail current and diode reverse recovery. characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =250 a 600 - - v collector cut-off current i ces v ge =0v, v ce =600v - - 250 a gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =5ma 5.0 6.0 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =50a - 1.90 2.2 v v ge =15v, i c =100a - 2.6 - v v ge =15v, i c =50a, t c = 125 ? - 2.20 - v dynamic total gate charge q g v cc =300v, v ge =15v, i c = 50a - 200 - nc gate-emitter charge q ge - 30 - nc gate-collector charge q gc - 100 - nc turn-on delay time t d(on) v cc =300v, i c =50a, v ge =15v,r g =10 ? inductive load, t c = 25 ? (note 1) - 95 - ns rise time t r - 85 - ns turn-off delay time t d(off) - 340 - ns fall time t f - 40 - ns turn-on switching loss e on - 1.40 - mj turn-off switching loss e off - 0.80 - mj total switching loss e ts - 2.2 - mj turn-on delay time t d(on) v cc =300v, i c =50a, v ge =15v, r g =10 ? inductive load, t c = 125 ? (note 1) - 95 - ns rise time t r - 90 - ns turn-off delay time t d(off) - 350 - ns fall time t f - 50 - ns turn-on switching loss e on - 1.5 - mj turn-off switching loss e off - 1.2 - mj total switching loss e ts - 2.7 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 4000 - pf ouput capacitance c oes - 250 - pf reverse transfer capacitance c res - 130 - pf short circuit withstand time t sc v cc =300v, v ge =15v, t c =100 ? 10 - - s 2 device mark 1 device mark 2 3 lot no 1 kgt 50n60kda 025
2011. 5. 25 3/8 KGT50N60KDA revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 50a t c =25 ? - 1.7 2.5 v t c =100 ? - 2.0 - diode reverse recovery time t rr i f = 50a di/dt = 600a/ s t c =25 ? - 100 200 ns t c =100 ? - 120 - diode peak reverse recovery current i rr t c =25 ? - 20 40 a t c =100 ? - 30 - diode reverse recovery charge q rr t c =25 ? - 1.2 3.5 c t c =100 ? - 2.2 -
2011. 5. 25 4/8 KGT50N60KDA revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 45 23 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 20 16 12 4 8 08 20 41216 02468 0 60 30 90 120 150 180 90 60 30 150 180 120 0 25 50 2.0 1.5 1.0 3.0 3.5 2.5 4.0 75 100 125 150 case temperature t c ( ) c 1 10 100 capacitance (pf) 500 0 2000 1500 1000 4500 4000 5500 6000 6500 5000 2500 3000 3500 fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics vge=8v 15v 10v 12v 100a 50a ic=30a common emitter t c = 25 c i c = 25a 50a 75a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 20 16 12 4 8 08 20 41216 common emitter t c = 125 c ciss coss crss i c = 25a 50a 75a 20v t c = 25 t c = t c = 125 c c 150 c common emitter v ge = 0v, f = 1mhz t c = 25 c
2011. 5. 25 5/8 KGT50N60KDA revision no : 0 collector current i c ( ) switching time (ns) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 0.1 10.0 1.0 fig 12. switching loss vs. collector current fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0 204060 10 30 50 10.0 1,000.0 100.0 10.0 1,000.0 100.0 tr td(on) 0204060 10 30 50 tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 50 0.1 1 10 25 common emitter v cc = 600v, v ge = 15v i c = 50a t c = t c = c 125 c 25 common emitter v cc = 600v, v ge = 15v i c = 50a t c = t c = c 125 c 25 common emitter v cc = 600v, v ge = 15v i c = 50a t c = t c = c 125 c 10.0 1,000.0 100.0 10.0 1,000.0 100.0 0204060 10 30 50 0204060 10 30 50 0204060 10 30 50 tr td(on) eon eoff 30 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tf td(off) eon eoff
2011. 5. 25 6/8 KGT50N60KDA revision no : 0 fig 13. gate charge characteristics gate charge q g ( nc ) gate-emitter voitage v ge (v) 0 80 160 40 120 60 140 20 100 220 200 180 0 2 4 6 8 10 12 14 16 common emitter r l = 24 ? t c = 25 c fig 14. soa characteristics 1 100 10 1000 1 100 10 1000 fig 15. turn-off soa fig 16. transient thermal impedance of igbt 400v 300v vcc = 200v rectan g ular pulse duration (sec) 1.000 thermal resistance (zthjc) 0.010 0.00001 0.0001 0.001 0.01 0.1 1 10 0.100 collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) 10 1 0.01 0.1 1 100 1000 10 100 1000 1ms 100 s dc 10 s single pluse 0.01 0.02 0.1 0.2 0.5 0.05 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature c 10ms turn-off safe operating area v ge = 15v, t c = 125 c 1. duty factor d=t1/t2 2. peak tj = pdm zthjc + t c t 1 t 2 p dm
2011. 5. 25 7/8 KGT50N60KDA revision no : 0 fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 04080 20 60 100 0 20 25 35 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=400a/ s di/dt=600a/ s 04080 20 60 100 0 140 120 80 60 40 20 100 01 3 24 1 100 1000 10 t c = 25 c t c = 125 c t c = 150 c 25 c 125 c 25 c 125 c di/dt=400a/ s di/dt=600a/ s
2011. 5. 25 8/8 KGT50N60KDA revision no : 0
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