oct-07-2003 1 bav222 / BAW222 silicon switching diode ? for high-speed switching applications (trr < 4ns) ? very low diode capacitance ( c t < 1.5pf) ? small smd package sc75 (jedec: sot416) BAW222 bav222 type package configuration marking bav222* BAW222* sc75 sc75 common cathode common anode a4s a1s * preliminary maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 80 v peak reverse voltage v rm 85 forward current i f 200 ma peak forward current i fm 300 surge forward current, t = 1s i fs 4.5 a mean rectifying current i o 100 ma total power dissipation bav222, t s 73c BAW222, t s tbd p tot 250 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150
oct-07-2003 2 bav222 / BAW222 thermal resistance parameter symbol value unit junction - soldering point 1) bav222 BAW222 r thjs 310 tbd k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a v (br) 85 - - v reverse current v r = 70 v v r = 25 v, t a = 150 c v r = 70 v, t a = 150 c i r - - - - - - 0.1 30 50 a forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 100 ma i f = 150 ma v f - - - - - - - - - - 715 855 1000 1200 1250 mv ac characteristics diode capacitance v r = 6 v, f = 1 mhz c t - - 1.5 pf reverse recovery time i f = 5 ma, v r = 6 v, measured at 0.1 i r , r l = 100 ? t rr - - 4 ns test circuit for reverse recovery time ehn00019 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 ? oscillograph: r = 50 , t r = 0.35ns, c = 0.05pf 1 for calculation of r thja please refer to application note thermal resistance
oct-07-2003 3 bav222 / BAW222 diode capacitance c t = ? (v r ) f = 1mhz 0 2 4 6 8 10 12 14 16 v 20 v r 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pf 1 c t reverse current i r = ? ( v r ) t a = parameter 0 10 20 30 40 50 60 v 80 v r -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 a i r 25 c 85 c -40 c 150 c forward current i f = ? ( v f ) t a = parameter 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v 1.2 v f -3 10 -2 10 -1 10 0 10 a i f 150 c 85 c 25 c -40 c
published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen ? infineon technologies ag 200 4 . all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
