dmn3008sfg document number: ds36748 rev. 5 - 2 1 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated 30v n-channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t c = +25c 30v 4.4m @ v gs = 10v 62a 5.5m @ v gs = 4.5v 56a description this mosfet is designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency power management applicat ions. applications ? backlighting ? power management functions ? dc-dc converters features and benefits ? low r ds(on) ? ensures on-state losses are minimized ? small, form factor thermally efficient package ena bles higher density end products ? occupies only 33% of the board area occupied by so -8 enabling smaller end products ? 100% unclamped inductive switch (uis) test in prod uction ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y mechanical data ? case: powerdi ? 3333-8 ? case material: molded plastic, "green" molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.072 grams (approximate) ordering information (note 4) part number case packaging dmn3008sfg-7 powerdi ? 3333-8 2,000/tape & reel DMN3008SFG-13 powerdi ? 3333-8 3,000/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information powerdi ? 3333-8 top view bottom view powerdi ? 3333-8 n08= product type marking code yyww = date code marking yy = last digit of year (ex: 15 = 2015) ww = week code (01 ~ 53) s s s g d d d d pin 1 equivalent circuit n nn n08 0808 08 y yy y y w w y w w y w w y w w d s g
dmn3008sfg document number: ds36748 rev. 5 - 2 2 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 17.6 14.1 a t<10s t a = +25c t a = +70c i d 23.0 18.4 a steady state t c = +25c t c = +70c i d 62 50 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 80 a maximum continuous body diode forward current (note 6) i s 2 a avalanche current, l = 0.1mh i as 45 a avalanche energy, l = 0.1mh e as 101 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.9 w t a = +70c 0.6 thermal resistance, junction to ambient (note 5) steady state r ja 134 c/w t < 10s 79 c/w total power dissipation (note 6) t a = +25c p d 2.1 w t a = +70c 1.3 thermal resistance, junction to ambient (note 6) steady state r ja 58 c/w t < 10s 34 c/w thermal resistance, junction to case (note 6) r j c 4.8 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 10 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 1 ? 2.3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 3.9 4.4 m v gs = 10v, i d = 13.5a ? 4.6 5.5 v gs = 4.5v, i d = 13.5a diode forward voltage v sd ? 0.75 1.2 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss ? 3,690 ? pf v ds = 10v, v gs = 0v, f = 1mhz output capacitance c oss ? 530 ? pf reverse transfer capacitance c rss ? 459 ? pf gate resistance r g ? 0.9 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g ? 41 ? nc v ds = 24v, i d = 27a total gate charge (v gs = 10v) q g ? 86 ? nc gate-source charge q gs ? 9.2 ? nc gate-drain charge q gd ? 18.6 ? nc turn-on delay time t d(on) ? 5.7 ? ns v dd = 15v, v gs = 10v, r l = 1.11 , r g = 4.7 , i d = 13.5a turn-on rise time t r ? 14.0 ? ns turn-off delay time t d(off) ? 63.7 ? ns turn-off fall time t f ? 28.4 ? ns reverse recovery time t rr ? 19.3 ? ns i f =13.5a, di/dt=100a/ s reverse recovery charge q rr ? 10.7 ? nc notes: 5. device mounted on fr-4 substrate pc board , 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz c opper, with 1inch square copper plate. 7. short duration pulse test used to minimize self- heating effect. 8. guaranteed by design. not subject to product tes ting.
dmn3008sfg document number: ds36748 rev. 5 - 2 3 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 0 0.5 1 1.5 2 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d v = 1.8v gs v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 10v gs v = 2.5v gs v = 4.0v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.002 0.0025 0.003 0.0035 0.004 0.0045 0.005 0.0055 0.006 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) v = 4.5v gs v = 10v gs 0 0.005 0.01 0.015 0.02 0.025 0.03 0 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) i = 13.5a d 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 5 10 15 20 25 30 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - s o u r c e on-resistance (normalized) ds(on) v = v i = 13.5a gs d 10 v = v i = 13.5a gs d 4.5
dmn3008sfg document number: ds36748 rev. 5 - 2 4 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) v = 4.5v i = 13.5a gs d v = v i = 13.5a gs d 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) gs 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 v = 24v i = a ds d 27 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 10 typical drain-source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( n a ) dss t = 25c a t = 85c a t = 125c a t = 150c a
dmn3008sfg document number: ds36748 rev. 5 - 2 5 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated v , drain-source voltage (v) ds figure 12 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 100 1000 10000 0 5 10 15 20 25 30 f = 1mhz c iss c oss c rss 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -v , drain-source voltage (v) figure 13 soa, safe operation area ds -i , drain current (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration times (sec) figure 14 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 136c/w duty cycle, d = t1/ t2 ja ja ja
dmn3008sfg document number: ds36748 rev. 5 - 2 6 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. powerdi ? 3333-8 suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. powerdi ? 3333-8 powerdi ? 3333 - 8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? 0.20 l 0.35 0.45 0.40 l1 ? ? 0.39 e ? ? 0.65 z ? ? 0.515 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 1 4 8 5 x y y1 y3 y2 x2 c 1 4 8 5 g g1
dmn3008sfg document number: ds36748 rev. 5 - 2 7 of 7 www.diodes.com march 2015 ? diodes incorporated d mn3008sfg advance information powerdi is a registered trademark of diodes incorpo rated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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