symbol max p-channel units v ds v v gs v i dm i ar a e ar mj t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r q jl n-ch 35 40 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r q jl p-ch 35 40 c/w maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a steady-state -25 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range a continuous drain current af t a =25c i d t a =70c pulsed drain current b w 7.3 6.2 35 2 1.44 -4.2 -5 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 20 -20 12 drain-source voltage 16 gate-source voltage thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a 13 25 avalanche current b repetitive avalanche energy 0.3mh b 13 25 AO4622 20v dual p + n-channel mosfet product summary n-channel p-channel v ds (v) = 20v -20v i d = 7.3a (v gs =4.5v) -5a (v gs =-4.5v) r ds(on) r ds(on) < 23m w (v gs =10v) < 53m w (v gs = -4.5v) < 30m w (v gs =4.5v) < 87m w (v gs = -2.5v) < 84m w (v gs =2.5v) 100% uis tested 100% uis tested 100% rg tested 100% rg tested general description the AO4622 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. soic-8 top view bottom view pin1 g2 s2 g1 s1 d2 d2 d1 d1 top view g2 d2 s2 g1 d1 s1 n-channel p-channel alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.25 2 v i d(on) 35 a 19 23 t j =125c 28 33.6 24 30 m w 67 84 m w g fs 17 s v sd 0.7 1 v i s 3 a c iss 900 1100 pf c oss 162 pf c rss 105 pf r g 0.9 1.35 w q g (10v) 15 18 nc q g (4.5v) 7.2 9 nc q gs 1.8 nc q gd 2.8 nc t d(on) 4.5 ns t r 9.2 ns t d(off) 18.7 ns t f 3.3 ns t rr 18 ns q rr 9.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. n-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v ua gate-body leakage current v ds =0v, v gs =16v gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =7.3a m w v gs =2.5v, i d =2a v gs =4.5v, i d =6.4a forward transconductance v ds =5v, i d =7.3a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =10v, i d =6.5a total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =10v, r l =1.4 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =7.3a, di/dt=100a/ m s body diode reverse recovery charge i f =7.3a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spe cific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. r q jl and r q jc are equivalent terms referring to thermal resistance from junction to drain lead. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev5: nov 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 n-channel typical electrical and thermal characteri stics 1.4 494 593 692 830 193 18 59 142 0 5 10 15 20 25 30 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.60 0.80 1.00 1.20 1.40 1.60 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v, 7.3a v gs =4.5v, 6.4a v gs =2.5v, 5.5a 10 15 20 25 30 35 40 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =10v i d =7.3a 25c 125c 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 4.5v 10v 6v 3.5v v gs =4.5v -40c v gs =2.5v alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 n-channel typical electrical and thermal characteri stics 1.4 494 593 692 830 193 18 0 2 4 6 8 10 0 3 6 9 12 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =10v i d =7.3a 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 10s 10ms alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vd c d u t l vgs vds isd isd d iode r ecovery test c ircuit & w aveform s v ds - vds + i f di/dt i r m rr v dd vdd q = - idt t rr - + v d c d u t v dd v gs v d s v gs r l r g v gs v ds 1 0% 90% r esistive s w itchin g t e st c ircu it & w avefo rm s t t r d(on) t on t d (o ff) t f t off alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -1.3 -0.9 -0.5 v i d(on) -25 a 44 53 t j =125c 59 71 67 87 m w g fs 13 s v sd -0.76 -1 v i s -2.5 a c iss 800 960 pf c oss 131 pf c rss 103 pf r g 6.7 10 w q g (10v) 15.5 nc q g (4.5v) 7.4 nc q gs 1.3 nc q gd 2.9 nc t d(on) 4.4 ns t r 7.6 ns t d(off) 44 ns t f 13.5 ns t rr 20 ns q rr 9 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 m a, v gs =0v i dss zero gate voltage drain current v ds =-16v, v gs =0v m a gate-body leakage current v ds =0v, v gs =12v gate threshold voltage v ds =v gs i d =-250 m a on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-5a m w v gs =-2.5v, i d =-4.2a forward transconductance v ds =-5v, i d =-5a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge (10v) v gs =-4.5v, v ds =-10v, i d =-4.5a total gate charge (4.5v) gate source charge gate drain charge turn-on delaytime v gs =-4.5v, v ds =-10v, r l =2 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-5a, di/dt=100a/ m s body diode reverse recovery charge i f =-5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the use r's specific board design. the current rating is based o n the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junctio n temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted o n 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's spec ific board design. b: repetitive rating, pulse width limited by junctio n temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. r q jl and r q jc are equivalent terms referring to thermal resistance from junction to drain lead. d. the static characteristics in figures 1 to 6 are obt ained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted o n 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev5: nov 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 typical electrical and thermal characteristics: p-c hannel 0 5 10 15 20 25 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2.5v -6v -3.5v -4.5v -10v 0 5 10 15 20 0.5 1.0 1.5 2.0 2.5 3.0 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 40 50 60 70 80 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v v gs =-2.5v 20 40 60 80 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v i d =-5a 25c 125c i d =-5a -40c i d =-4.2a -40c alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 typical electrical and thermal characteristics: p-c hannel 0 2 4 6 8 10 0 4 8 12 16 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 60 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss v ds =-10v i d =-5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0 0 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 10s 10ms 1s alpha & omega semiconductor, ltd. www.aosmd.com
AO4622 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vd c d ut l vgs isd diode recovery test circuit & w aveform s vds - vds + di/dt r m rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc d ut vdd vgs vds vgs rl rg resistive switching test circuit & w aveform s - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) alpha & omega semiconductor, ltd. www.aosmd.com
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