? ? ? ? guilin strong micro-electronics co.,ltd. GM807 ( ? bc807) features c pnp low frequency amplifier transistor maximum ratings ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?OlO? v ceo - 45 v collector-base voltage ?O - O? v cbo - 50 v emitter-base voltage lO - O? v ebo - 5.0 v collector current continuous ?O - Bm ic - 500 ma thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 ?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature] Y??? t j , t stg -55to+150 device marking GM807-16 (bc807-16) =5a;GM807-25 (bc807-25) =5b; GM807-40 (bc807-40) =5c
? ? ? ? guilin strong micro-electronics co.,ltd. GM807 ( ? bc807) electrical characteristics (t a = 25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? ma x ? unit off characteristics ? collector-emitter breakdown voltage ?OlO? (ic= - 10madc,i b =0) v (br)ceo - 45 v collector-base breakdown voltage ?OO? (ic= - 10 u adc,v eb =0) v (br)cbs - 50 v emitter-base breakdown voltage lOO? (i e = - 1.0 u adc,ic=0) v (br)ebo - 5.0 v collector cutoff curren t ?O? (v cb = - 20v) (v cb = - 20v,t a =150 ) i cbo - 100 - 5.0 na ua on charcteristics ? dc current gain ? h fe (i c = - 100ma,v ce = - 1.0v) 8 0 7-16 8 0 7-25 8 0 7-40 100 160 250 250 400 600 (i c = - 500ma,v ce = - 1.0v) 40 collector-emitter saturation voltage O - lO?? (i c = - 500ma, i b = - 50ma) v ce(sat) - 0.7 v base -emitter saturation voltage O - lO ?? (i c = - 500ma, i b = - 50ma) v b e(sat) - 1.2 v base-emitter voltage O - lO? (i c = - 500ma, v ce = - 1.0v) v be(on) - 1.2 v small-signal characteristics ? 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. current-gain-bandwidth product - ?e (i c = - 10ma,v ce = - 5.0v,f=100mhz) f t 100 mhz output capacitance ? (v cb = - 10v, f=1.0mhz) c obo 10 pf
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