bpw85 document number 81531 rev. 1.5, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8396 silicon npn phototransistor description bpw85 is a high speed and high sensitive silicon npn epitaxial planar phototransistor in a standard t-1 ( ? 3 mm) plastic package. due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. the viewing angle of 25 makes it insensible to ambient straylight. features fast response times high photo sensitivity standard t-1 ( ? 3 mm ) clear plastic package axial terminals angle of half sensitivity ? = 25 suitable for visible and near infrared radiation selected into sensitivity groups lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications detector in electronic control and drive circuits absolute maximum ratings t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 5v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma total power dissipation t amb 55 c p tot 100 mw junction temperature t j 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 3 s, 2 mm from case t sd 260 c thermal resistance junction/ ambient r thja 450 k/w parameter test condition symbol min ty p. max unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector-emitter dark current v ce = 20 v, e = 0 i ceo 1 200 na collector-emitter capacitance v ce = 5 v, f = 1 mhz, e = 0 c ceo 3pf
www.vishay.com 2 document number 81531 rev. 1.5, 08-mar-05 bpw85 vishay semiconductors optical characteristics t amb = 25 c, unless otherwise specified type dedicated characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit angle of half sensitivity ? 25 deg wavelength of peak sensitivity p 850 nm range of spectral bandwidth 0.5 620 to 980 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.3 v tu r n - o n t i m e v s = 5 v, i c = 5 ma, r l = 100 ? t on 2.0 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 ? t off 2.3 s cut-off frequency v s = 5 v, i c = 5 ma, r l = 100 ? f c 180 khz parameter test condition part symbol min ty p. max unit collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v BPW85A i ca 0.8 1.5 2.5 ma bpw85b i ca 1.5 2.5 4.0 ma bpw85c i ca 3.0 5.0 8.0 ma figure 1. total power dissipati on vs. ambient temperature 020406080 0 25 50 75 100 125 p Ctotal power dissipation ( mw ) tot t amb C ambient temperature ( c ) 100 94 8308 r thja iure 2colletordarcurrentsambienttemperature 94 8304 20 i - collector dark current ( na ) ceo 100 40 60 80 t amb - ambient temperature ( c) 10 0 10 1 10 2 10 3 10 4 v ce =20v
bpw85 document number 81531 rev. 1.5, 08-mar-05 vishay semiconductors www.vishay.com 3 figure 3. relative collector cu rrent vs. ambient temperature figure 4. collector light current vs. irradiance figure 5. collector light current vs. collector emitter voltage 94 8239 0 0.6 0.8 1.0 1.2 1.4 2.0 i - relative collector current ca rel 20 40 60 80 100 1.6 1.8 v ce =5v e e = 1 mw/cm 2 = 950 nm t amb - ambient temperature ( c) 0.01 0.1 1 0.01 0.1 1 10 i C collector light current ( ma) ca e e C irradiance ( mw/cm 2 ) 10 94 8271 bpw85c bpw85b v ce =5v = 950 nm BPW85A 0.5mw/cm 2 0.2mw/cm 2 0.1mw/cm 2 0.05mw/cm 2 0.1 1 10 0.01 0.1 1 10 i C collector light current ( ma) ca v ce C collector emitter voltage ( v ) 100 94 8275 bpw 85 a = 950 nm e e =1mw/cm 2 igure 6.collectorlightcurrent .collectoremittervoltage igure 7.collectorlightcurrent .collectoremittervoltage igure 8.collectoremittercaac itance.collectoremitter voltage 0.1 1 10 0.01 0.1 1 10 i C collector light current ( ma) ca v ce C collector emitter voltage ( v ) 100 94 8276 0.5mw/cm 2 0.2mw/cm 2 0.1mw/cm 2 0.05mw/cm 2 = 950 nm bpw 85 b e e =1mw/cm 2 0.1 1 10 0.01 0.1 1 10 i C collector light current ( ma) ca v ce C collector emitter voltage ( v ) 100 94 8277 e e =1mw/cm 2 0.5 mw/cm 2 0.2mw/cm 2 0.1mw/cm 2 0.05 mw/cm 2 bpw 85 c = 950 nm 0.1 1 10 0 2 4 6 8 10 v ce - collector emitter voltage ( v ) 100 94 8294 c - collector emitter capacitance ( pf ) ceo f=1mhz
www.vishay.com 4 document number 81531 rev. 1.5, 08-mar-05 bpw85 vishay semiconductors figure 9. turn on/turn off time vs. collector current figure 10. relative spectral sensitivity vs. wavelength figure 11. relative radiant sensitivity vs. angular displacement 0 2 8 94 8293 t / t - turn on / turn off time ( s) off i c - collector current ( ma ) on 6 4 v ce =5v r l = 100 = 950 nm t off t on ? 2 046 14 12 10 8 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s ( ) C relative spectral sensitivity rel C wavelength ( nm ) 94 8348 800 0.4 0.2 0 0.2 0.4 s C relative sensitivity rel 0.6 94 8295 0.6 0.9 0.8 0 30 10 20 0.7 1.0 40 50 70 60 80
bpw85 document number 81531 rev. 1.5, 08-mar-05 vishay semiconductors www.vishay.com 5 package dimensions in mm 96 12190
www.vishay.com 6 document number 81531 rev. 1.5, 08-mar-05 bpw85 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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