microwave power gaas fet microwave semiconductor TIM5359-8sl technical data features ? low intermodulation distortion ? high gain im3=-45 dbc at pout= 28.5dbm g1db=9.0db at 5.3ghz to 5.9ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=39.5dbm at 5.3ghz to 5.9ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 38.5 39.5 ? power gain at 1db gain compression point g 1db db 8.0 9.0 ? drain current i ds1 a ? 2.2 2.6 gain flatness g db ? ? 0.6 power added efficiency add v ds =10v f= 5.3 to 5.9ghz % ? 35 ? 3 rd order intermodulation distortion im3 dbc -42 -45 ? drain current ids2 two-tone test po=28.5dbm (single carrier level) a ? 2.2 2.6 channel temperature rise tch v ds x i ds x r th(c-c) c ? ? 80 recommended gate resistance(rg) : 150 (max.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 3.0a ms ? 1800 ? pinch-off voltage v gsoff v ds = 3v i ds = 30ma v -1.0 -2.5 -4.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 5.2 ? gate-source breakdown voltage v gso i gs = -100 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 2.5 3.8 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jul. 2006
2 TIM5359-8sl absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 7.0 total power dissipation (tc= 25 c) p t w 39.5 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (2-11d1b) unit in mm (1) gate (2) source (3) drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c.
3 TIM5359-8sl output power (pout) vs. frequency v ds =10v i ds ? 2.2a pin=30.5dbm frequency (ghz) output power(pout) vs. input power(pin) freq.=5.9ghz v ds =10v i ds ? 2.2a pout add rf performance 42 41 40 39 5.6 5.3 5.4 5.5 5.7 5.8 5.9 40 39 38 37 pout(dbm) 80 70 60 50 40 30 20 pout(dbm) 38 add(%) 37 36 35 34 33 10 pin(dbm) 24 26 28 30 32 34
4 TIM5359-8sl power dissipation vs. case temperature im3 vs. output power characteristics v ds =10v i ds ? 2.2a freq.=5.9ghz f=5mhz 40 30 20 10 0 40 80 120 160 200 tc ( c) pt (w) 24 -10 -20 -30 -40 -50 -60 im3(dbc) 26 28 30 32 34 pout(dbm) @single carrier level
microwave power gaas fet microwave semiconductor TIM5359-8ul technical data features ? high power ? broad band internally matched fet p1db=39.5dbm at 5.3ghz to 5.9ghz ? high gain ? hermetically sealed package g1db=10.0db at 5.3ghz to 5.9ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db compression point p 1db dbm 38.5 39.5 ? power gain at 1db compression point g 1db db 9.0 10.0 ? drain current i ds1 a ? 2.2 2.6 gain flatness g db ? ? 0.6 power added efficiency add v ds = 10 v idsset=1.8a f = 5.3 to 5.9ghz % ? 36 ? 3rd order intermodulation distortion im 3 dbc -44 -47 ? drain current i ds2 two-tone test po= 28.5dbm (single carrier level) a ? 2.0 2.6 channel temperature rise tch (vds x ids +pin-p1db) x rth(c-c) c ? ? 80 recommended gate resistance(rg) : 150 (max.) electrical character istics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 3.0a ms ? 1800 ? pinch-off voltage v gsoff v ds = 3v i ds = 30ma v -1.0 -2.5 -4.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 5.2 ? gate-source breakdown voltage v gso i gs = -100 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 2.5 3.5 ? the information contained herein is presented only as a guide for the applications of ou r products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jun. 2009
TIM5359-8ul absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 7.0 total power dissipation (tc= 25 c) p t w 42.9 channel temperature t ch c 175 storage t stg c -65 to +175 package outline (2-11d1b) unit in mm c gate d source e drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2
TIM5359-8ul output power (pout) vs. frequency 3 v ds =10v i ds ? 2.2a pin=29.5dbm 40 39 38 37 pout(dbm) rf performance 5.3 5.4 5.5 5.7 5.8 5.9 5.6 frequency (ghz) output power(pout) vs. input power(pin) freq.=5.9ghz v ds =10v i ds ? 2.2a pout add pin(dbm) 42 41 40 39 38 37 36 35 34 33 80 70 60 50 40 30 20 10 pout(dbm) add(%) 23 25 27 29 31 33
TIM5359-8ul power dissipation vs. case temperature 4 im3 vs. output power characteristics v ds =10v i ds ? 2.2a freq.=5.9ghz f=5mhz 24 im3 (dbc) 26 28 30 32 50 40 30 20 10 0 pt (w) -60 -50 -10 -20 -30 -40 0 40 80 120 160 200 tc ( c) 34 pout(dbm) @single carrier level
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