hmic silicon beamlead pin diode v2 MA4PBL027 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 1 features ? no wirebonds required ? rugged silicon-glass construction ? silicon nitride passivation ? polymer scratch and impact protection ? low parasitic capacitance and inductance ? ultra low capacitance < 40 ff ? excellent rc product < 0.10 ps ? high switching cutoff frequency > 110 ghz ? 110 nanosecond minority carrier lifetime ? driven by standard +5v ttl pin diode driver description the MA4PBL027 is a silicon beamlead pin diode fabricated with m/a-com technology solutions hmic? process. it features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. the diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. the topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. these protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. the diodes exhibit low series resistance, low capacitance, and extremely fast switching speed. applications the ultra low capacitance, low rc product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. the low bias levels of +10 ma in the low loss state and 0v in the isolation state allows the use of a simple + 5v ttl gate driver. these diodes can be used as switching arrays on radar systems, high speed ecm circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. absolute maximum ratings @ t amb = 25c (unless otherwise specified) ma4pblp027 parameter absolute maximum forward current 100 ma reverse voltage 90 v operating temperature -55c to +125c storage temperature -55c to +150c junction temperature +175c rf c.w. incident power 30 dbm c.w. rf & dc dissipated power 150 mw mounting temperature 235c for 10 sec. topside bottom
hmic silicon beamlead pin diode v2 MA4PBL027 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 2 electrical specifi cations at t amb = 25 c notes: 1. capacitance is determined by measuring th e isolation of a single series diode in a 50 ? line at 10ghz. 2. forward series resistance is determined by measuri ng the insertion loss of a single series diode in a 50 ? line at 10ghz. dim inches mm min. max. min. max. a 0.009 0.013 0.2286 0.3302 b 0.0049 0.0089 0.1245 0.2261 c 0.0037 0.0057 0.0940 0.1448 d 0.0049 0.0089 0.1245 0.2261 e 0.002 0.006 0.0508 0.1524 f 0.0218 0.0278 0.5537 0.70612 test conditions paramters units min typical max. total capacitance @ ?5v/10 ghz 1 ct ff ? 26 30 forward resistance @ +20ma/10 ghz 2 rs ohms ? 4 4.9 forward voltage at +10ma vf volts 1.2 1.36 1.5 leakage current at ?40 v ir na ? 50 300 minority carrier lifetime tl ns ? 5 10
hmic silicon beamlead pin diode v2 MA4PBL027 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 3 symbol conditions units typical maximum c t 0v, 1mhz 2 pf 0.048 c t -3v, 1mhz 2 pf 0.039 c t -10v, 1mhz 2 pf 0.033 0.040 c t -40v, 1mhz 2 pf 0.030 0.040 c t 0v, 100mhz 2,4 pf 0.043 c t -3v, 100mhz 2,4 pf 0.033 c t -10v, 100mhz 2,4 pf 0.031 c t -40v, 100mhz 2,4 pf 0.027 c t 0v, 1ghz 2,4 pf 0.039 c t -3v, 1ghz 2,4 pf 0.032 c t -10v, 1ghz 2,4 pf 0.029 c t -40v, 1ghz 2,4 pf 0.026 r s 10ma, 100 mhz 3,4 w 3.8 r s 20ma, 100 mhz 3,4 w 3.0 r s 10ma, 1ghz 3,4 w 3.5 r s 20ma, 1ghz 3,4 w 2.8 v f 20ma v 0.917 1.1 v r -10a v 110 i r -40 v na 1.0 i r -90 v ua - 10.0 t l +10ma / -6ma ns 110 parameter total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance total capacitance series resistance series resistance series resistance series resistance forward voltage reverse voltage reverse current reverse current carrier lifetime notes: 2. total capacitance, c t , is equivalent to the sum of junction capa citance ,cj, and parasitic capacitance, cpar. 3. series resistance r s is equivalent to the total diode resistance : rs = rj ( junction resistance) + rc ( ohmic resistance) 4. rs and c t are measured on an hp4291a impedance analyzer with die mounted in an ods-186 package with conductive silver epoxy electrical specifi cations at t amb = 25 c
hmic silicon beamlead pin diode v2 MA4PBL027 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 4 rs cj ls = 0.15nh c parasitic = 8 ff MA4PBL027 spice model vj= 0.7 v af=1.0 imax= 1.1e+5 a/m^2 fc= 0.5 m= 0.5 kf= 0.0 wpmax= 150 mw ffe= 1.0 wbv= 90 v allparams = cj0= 0.040 pf rs(i)= rc + rj(i) = 0.05 ohm tau= 110 nsec cjmin= 0.030 pf rr= 100 k ohms wi= 14 um un = 900 cm^2/v-sec vi=0.0 v is=1.0e-14 a nlpinm1 input output
hmic silicon beamlead pin diode v2 MA4PBL027 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 5 handling and assembly procedures the following precautions should be observed to avoid damaging these devices. cleanliness these devices should be handled in a clean environment. static sensitivity silicon pin diodes are esd sensitive and can be damaged by static electricity. they are classified class 1, hbm and proper esd techniques should be used when handling these devices. general handling a polymer layer provides scratch protection for the diode junction area and anode air bridge. however, the leads of beam lead devices are very fragile and must be handled with extreme care. the leads can easily be distorted or broken by the normal pressures if not careful while handling with tweezers. a vacuum pencil with a #27 tip is the preferred choice for picking and placing. attachment these devices were designed to be inserted onto hard or soft substrates. recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy. ordering information packaging MA4PBL027 gel pak/100pcs part number packaging MA4PBL027 gel pak/100pcs
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