p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 1 7 00 v n - c hannel mosfet v oltage 7 0 0 v c urrent 2 a ito - 220ab - f to - 220ab to - 252 to - 251ab f eatures ? r ds(on) , v gs @10v,i d @ 2 a < 6.5 ? high switching speed ? improv ed dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case : to - 251ab,to - 252 ,to - 220ab, ito - 220ab - f p ackage ? terminals : solderable per mil - std - 750, method 2026 ? to - 251ab approx. weight : 0.0104 ounces, 0.297grams ? to - 252 approx. weight : 0.0104 ounces, 0.297grams ? to - 220ab approx. weight : 0.06 7 ounces, 2 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251ab to - 220ab ito - 220ab - f to - 252 units drain - source voltage v ds 700 v gate - source voltage v gs + 30 v continuous drain current i d 2 a puls ed drain current i dm 8 a single pulse avalanche energy (note 1 ) e as 118 mj power dissipation t c =25 o c p d 39 45 28 39 w derate above 25 o c 0.31 0.36 0.22 0.31 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 3.21 110 2.78 62.5 4.46 120 3.21 110 o c /w ? limited only by maximum junction temperature
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition mi n. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 7 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 2.9 6 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 1 a - 5. 2 6.5 zero gate voltage drain current i ds s v ds = 7 00v,v gs =0v - 0.01 1 ua gate - source leakage current i gss v gs = + 30v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 2 a,v gs =0v - 0.87 1.4 v dynamic (note 4 ) total gate charge q g v ds = 560 v, i d = 2 a, v gs =10v (note 2,3 ) - 7.8 - nc gate - source charge q g s - 2 - gate - drain charge q gd - 4 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 260 - pf output capacitance coss - 32 - reverse transfer capacitance crss - 1.3 - turn - on delay time td (on) v dd = 350 v, i d = 2 a, r g = 25 (note 2,3 ) - 7 - ns turn - on rise time t r - 21 - turn - off delay time td (off) - 13 - turn - off fall time t f - 23 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 2 a maximum pulsed drain - source diode forwar d current i sm --- - - 8 a reverse recovery time trr v gs = 0 v, i s = 2 a di f / dt=100a/us (note 2 ) - 369 - ns reverse recovery charge qrr - 1.2 - uc notes : 1. l=30mh, i as =2.75 a, v dd = 50 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially ind ependent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transient thermal impedance vs. pulse width fig. 14 pjp2 na70 normalized transient thermal impedance vs. pulse width fig. 15 pjf2 na70 normalized transient thermal impedance vs. pulse width
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 6 packaging information . ito - 2 20ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252 dimension u nit: mm to - 251ab dimension u nit: mm
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u2na70 _t0_00001 to - 2 51ab 80pcs / tube u2na70 halogen free pjd2na70_l2_00001 to - 252 3,000pcs / 13 reel d2na70 halogen free pj p2na70 _t0_00001 to - 220 ab 50pcs / tube p2na70 halogen free pj f2na70 _t0_00001 i to - 220 ab - f 50pcs / tube f2na70 halogen free
p p j u 2 na 7 0 / pj d 2 na 7 0 / pj p 2 na 7 0 / pj f 2 na 7 0 march 10,2014 - rev.00 page 8 disclaimer
|
