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dual op amp and voltage reference ap4310/a 1 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet general description the ap4310/a is a monolithic ic specifically designed to regulate the output current and voltage lev- els of switching battery chargers and power supplies. the device contains two op amps and a 2.5v preci- sion shunt voltage reference. op amp 1 is designed for voltage control with its non-inverting input internally connected to the output of the shunt regulator. op amp 2 is for current control with both inputs uncom- mitted. the ic offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. ap4310a has more strigent reference voltage tolerance than ap4310. the ap4310/a is available in standard packages of dip-8 and soic-8. features op amp input offset voltage: 0.5mv supply current: 75 a per op amp at 5.0v sup- ply voltage unity gain bandwidth: 1mhz output voltage swing: 0 to (v cc -1.5) v power supply range: 3 to 36v voltage reference fixed output voltage reference: 2.5v reference voltage tolerance ap4310a: 0.4%, ap4310: 1% sink current capability: 0.05 to 80ma typical output impedance: 0.2 ? applications battery charger switching power supply figure 1. package types of ap4310/a soic-8 dip-8
dual op amp and voltage reference ap4310/a 2 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet functional block diagram pin configuration figure 2. pin configuration of ap4310/a (top view) figure 3. functional block diagram of ap4310/a v cc output 2 input 2- input 2+ gnd input 1+ / v ka input 1- output 1 - + - + 1 2 3 4 8 7 6 5 op amp 1 op amp 2 input 1- input 1+ / v ka gnd v cc output 2 input 2- input 2+ output 1 (soic-8) m package 1 2 3 4 8 7 6 5 p package (dip-8) 1 2 3 4 8 7 6 5 input 1- input 1+ / v ka gnd v cc output 2 input 2- input 2+ output 1
dual op amp and voltage reference ap4310/a 3 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet ordering information ap4310 - package reference voltage voltage tolerance temperature range part number marking id packing type dip-8 2.5v 0.4% -40 to 105 o c ap4310ap-g1 ap4310ap-g1 tube 1% ap4310p-g1 ap4310p-g1 soic-8 2.5v 0.4% -40 to 105 o c ap4310am-g1 ap4310am-g1 tube ap4310amtr-g1 ap4310am-g1 tape & reel 1% -40 to 105 o c ap4310m-g1 ap4310m-g1 tube ap4310mtr-g1 ap4310m-g1 tape & reel circuit type package p: dip-8 m: soic-8 g1: green tr: tape and reel blank: tube blank: ap4310 a: ap4310a bcd semiconductor's products, as designate d with "g1" suffix in the part number, are rohs compliant and green.
dual op amp and voltage reference ap4310/a 4 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet parameter symbol value unit power supply voltage (v cc to gnd) v cc 40 v op amp 1 and 2 input voltage range (pins 2, 5, 6) v in -0.3 to v cc +0.3 v op amp 2 input differential voltage (pins 5, 6) v id 40 v voltage reference cathode current (pin 3) i k 100 ma power dissipation (t a =25 o c) p d dip-8 800 mw soic-8 500 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering 10s) t lead 260 o c esd (human body model) esd 2000 v note 1: stresses greater than those listed under "absol ute maximum ratings" may cause permanent damage to the device. these are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating c onditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter min max unit supply voltage 3 36 v ambient temperature -40 105 o c recommended operating conditions absolute maximum ratings (note 1)
dual op amp and voltage reference ap4310/a 5 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet operating conditions: v cc = + 5v, t a =25 o c unless otherwise specified. electrical characteristics parameter conditions min typ max unit total supply current, excluding cur- rent in voltage reference v cc =5v, no load, -40 o c t a 105 o c 0.15 0.25 ma v cc =30v, no load, -40 o c t a 105 o c 0.20 0.30 voltage reference section reference voltage ap4310a i k =10ma t a =2 5 o c 2.49 2.50 2.51 v -40 o c t a 105 o c 2.48 2.50 2.52 ap4310 t a =2 5 o c 2.475 2.50 2.525 v -40 o c t a 105 o c 2.45 2.50 2.55 reference voltage deviation over full temperature range i k =10ma, t a =-40 to 105 o c 524mv minimum cathode current for regulation 0.01 0.05 ma dynamic impedance i k =1.0 to 80ma, f<1khz 0.2 0.5 ? op amp 1 section (v cc =5v, v o =1.4v, t a =25 o c, unless otherwise noted) input offset voltage t a =25 o c 0.5 3 mv t a =-40 to 105 o c 5 input offset voltage temperature drift t a =-40 to 105 o c 7 v/ o c input bias current (inverting input only) t a =25 o c 20 150 na large signal voltage gain v cc =15v, r l =2k ? , v o =1.4 to 11.4v 85 100 db power supply re jection ratio v cc =5 to 30v 70 90 db output current source v cc =15v, v id =1v, v o =2v 20 40 ma sink v cc =15v, v id =-1v, v o =2v 520 ma output voltage swing (high) v cc =30v, r l =10k ? , v id =1v 27 28 v output voltage swing (low) v cc =30v, r l =10k ? , v id =-1v 17 100 mv slew rate v cc =18v, r l =2k ? , a v =1, v in =0.5 to 2v, c l =100pf 0.2 0.5 v/ s unity gain bandwidth v cc =30v, r l =2k ? , c l =100pf 0.7 1.0 mhz
dual op amp and voltage reference ap4310/a 6 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet parameter conditions min typ max unit op amp 2 section (v cc =5v, v o =1.4v, t a =25 o c, unless otherwise noted) input offset voltage t a =25 o c 0.5 3 mv t a =-40 to 105 o c 5 input offset voltage temperature drift t a =-40 to 105 o c 7 v/ o c input offset current t a =25 o c 230na input bias current t a =25 o c 20 150 na input voltage range v cc =0 to 36v 0 v cc -1.5 v common mode rejection ratio t a =25 o c, v cm =0 to 3.5v 70 85 db large signal voltage gain v cc =15v, r l =2k ? , v o =1.4 to 11.4v 85 100 db power supply rejection ratio v cc =5 to 30v 70 90 d output current source v cc =15v, v id =1v, v o =2v 20 40 ma sink v cc =15v, v id =-1v, v o =2v 520 ma output voltage swing (high) v cc =30v, r l =10k ? , v id =1v 27 28 v output voltage swing (low) v cc =30v, r l =10k ? , v id =-1v 17 100 mv slew rate v cc =18v, r l =2k ? , a v =1, v in =0.5 to 2v, c l =100pf 0.2 0.5 v/ s unity gain bandwidth v cc =30v, r l =2k ? , c l =100pf 0.7 1.0 mhz electrical characteristics (continued) operating conditions: v cc = + 5v, t a =25 o c unless otherwise specified.
dual op amp and voltage reference ap4310/a 7 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet -40-20 0 20406080100120 0 5 10 15 20 25 30 input bias current (na) ambient temperature ( o c) figure 6. input bias current vs. ambient temperature 0 2 4 6 8 101214161820 60 70 80 90 100 110 voltage gain(db) supply voltage (v) r l =2k ? r l =20k ? figure 7. op amp voltage gain -2-10123 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) v ka =v ref t a =25 0 c -40-20 0 20406080100120 2.480 2.485 2.490 2.495 2.500 2.505 2.510 reference voltage (v) ambient temperature ( o c) typical performance characteristics figure 5. cathode current vs. cathode voltage figure 4. reference voltage vs. ambient temperature
dual op amp and voltage reference ap4310/a 8 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet typical application figure 8. application of ap4310/a in a cons tant current and constant voltage charger ac line smps r2 current sense r7 r8 battery pack r4 r3 r5 r6 r1 opto isolator + - op amp 2 + - op amp 1 ap4310
dual op amp and voltage reference ap4310/a 9 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet mechanical dimensions dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.600(0.378) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional.
dual op amp and voltage reference ap4310/a 10 jan. 2013 rev. 1. 8 bcd semiconductor manufacturing limited data sheet mechanical dimens ions (continued) soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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