sac5.0 thru sac50 www.vishay.com vishay general semiconductor revision: 18-nov-13 1 document number: 88379 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low capacitance t rans z orb ? transient voltage suppressors features ? glass passivated chip junction ? 500 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, and telecommunication. mechanical data case: do-204ac, molded epoxy over passivated body molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-compliant and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end note (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 primary characteristics v wm 5.0 v to 50 v v br 7.6 v to 55.5 v p ppm 500 w p d 3.0 w t j max. 175 c polarity uni-directional package do-204ac (do-15) do-204ac (do-15) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipation with a 10/1000 s waveform (1) p ppm 500 w peak pulse current with a 10/1000 s wavefo rm (fig. 3) (1) i ppm see next table a power dissipation on in finite heatsink at t l = 75 c (fig. 2) p d 3.0 w operating junction and storage temperature range t j , t stg - 55 to + 175 c
sac5.0 thru sac50 www.vishay.com vishay general semiconductor revision: 18-nov-13 2 document number: 88379 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - power derating curve electrical characteristics (t a = 25 c unless otherwise noted) part number breakdown voltage at i t = 1.0 ma v br (v) stand-off voltage (1) v wm (v) maximum reverse leakage at v wm i d (a) maximum clamping voltage at i pp = 5.0 a v c (v) maximum peak pulse current per fig. 3 i pp (a) maximum junction capacitance at 0 v ( p f) working inverse blocking voltage v wib (v) inverse blocking leakage current v wib i ib (ma) peak inverse blocking voltage v pib (v) min. sac5.0 7.60 5 300 10.0 44 50 75 1.0 100 sac6.0 7.90 6 300 11.2 41 50 75 1.0 100 sac7.0 8.33 7 300 12.6 38 50 75 1.0 100 sac8.0 8.89 8 100 13.4 36 50 75 1.0 100 sac8.5 9.44 8.5 50 14.0 34 50 75 1.0 100 sac10 11.10 10 5.0 16.3 29 50 75 1.0 100 sac12 13.30 12 5.0 19.0 25 50 75 1.0 100 sac15 16.70 15 5.0 23.6 20 50 75 1.0 100 sac18 20.00 18 5.0 28.8 15 50 75 1.0 100 sac22 24.40 22 5.0 35.4 14 50 75 1.0 100 sac26 28.90 26 5.0 42.3 11.1 50 75 1.0 100 sac30 33.30 30 5.0 48.6 10.0 50 75 1.0 100 sac36 40.00 36 5.0 60.0 8.6 50 75 1.0 100 sac45 50.00 45 5.0 77.0 6.8 50 150 1.0 200 sac50 55.50 50 5.0 88.0 5.8 50 150 1.0 200 ordering information (example) preferred pin unit weight (g) preferred pa ckage code base quantity delivery mode sac5.0a-e3/54 0.432 54 4000 13" diameter paper tape and reel t d - pulse width 100 10 1 0.1 p ppm - peak pulse power (kw) 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms non-repetitive pulse waveform shown in fig. 3 t a = 25 c current waveforms t d p pk ?0.5? impulse exponential decay p pk t d = 7 t p t d half sine p pk square t d l = 0.375" (9.5 mm) lead lengths t l - lead temperature (c) 100 75 25 0 0 50 100 150 175 peak power (single pulse) t j = initial temperature power dissipation percentage of rated power (%) 50 25 75 125
sac5.0 thru sac50 www.vishay.com vishay general semiconductor revision: 18-nov-13 3 document number: 88379 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - pulse waveform fig. 4 - ac line protection application schematic package outline dimensions in inches (millimeters) t - time (ms) 150 50 0 0 2.0 4.0 i ppm - peak pulse current, % i rsm 100 1.0 3.0 peak value i ppm 10/1000 s waveform as defined by r.e.a. half value - i ppm i pp 2 t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm t r = 10 s t d low capacitance tvs application note: device must be used with two units in parallel, opposite in polarity as shown in circuit for ac signal line protection. diode transient voltage suppressor do-204ac (do-15) 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 1.0 (25.4) min.
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