View RF5515PCK-410_8298462.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 of 9 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt ldmos 2 n/c 1 rf in 3 lna en 4 n/c 5rf out 6n/c 8 n/c 7 vdd rf5515 4.9ghz to 5.85ghz low noise amplifier with enable the rf5515 is a high performance low noise amplifier design for 802.11a applications (4.9ghz to 5.85ghz) and other portable consumer electronics. this miniature lna features a high dynamic range and high intercept point with low current consumption around 12ma. the lna is dc blocked and internally matched to 50 ? at input and output pins. the ic is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package. features ? 4.9ghz to 5.85ghz operation ? 2.3v to 4.8v single supply ? 1.6db noise figure ? 11db typical gain applications ? high band wifi lna/driver ? general purpose amplifier for portable applications rf5515 standard 25 piece bag rf5515sr standard 100 piece reel rf5515tr7 standard 2500 piece reel RF5515PCK-410 fully assembled evaluati on board and 5 piece loose samples ds111025 ? rf5515 4.9ghz to 5.85ghz low noise ampli- fier with enable package style: 2.2mm x 2.2mm x 0.5mm
2 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit dc supply voltage (no rf applied) 6.0 v dc supply voltage (rf applied) 5.25 v maximum input power (no damage) 10 dbm operating temperature -40 to +85 c storage temperature -40 to +150 c parameter specification unit condition min. typ. max. typical conditions temp = 25c, v dd = 3.3v, lna_en = 3.3v, fre- quency = 4.9ghz to 5.85ghz unless otherwise noted in the condition column. frequency 4.9 5.85 ghz lna voltage supply (v dd ) 2.7 3.3 4.8 v lna enable voltage (lna_en) 2.5 4.8 vdd lna enabled 0 0.2 v lna off lna current lna v dd 6 12 20 ma lna in ?on? state, over operating temperature range, full v dd range, full lna_en range, and full frequency band. 05 ? alna in ?off? state lna enable 200 ? a gain lna in ?on? state 8 11 14 db over full operating temperature range, full v cc range, full lna_en range, and full frequency range. noise figure lna in ?on? state 1.2 1.7 2.4 db over full v dd range, full lna_en range, full fre- quency range, and over operating temperature range. passband ripple -0.5 +0.5 db rx mode, lna on input p1db -4 -1 dbm over operating temperature range, full voltage range, full lna_en range, and full frequency range. rf out port return loss -9.6 db 4.9ghz to 5.85ghz rf in port return loss -9.6 db rf out rx port impedance 50 ? no external matching caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing 2.2mm x 2.2mm x 0.5mm pin function description 1rf in rf input. input is matched to 50 ? and dc block is provided internally. 2nc no connect 3lna_en lna enable. voltage which is a high impedance pin could require bypassing depending on the nature of the sup- ply voltage and the layout. 4nc no connect 5rf out rf output. this pin is matched to 50 ? internally and it is a dc short to gnd. see functional block diagram for more details. 6nc no connect 7vdd supply voltage for the lna circuit. it is recommended that bypass capacitors are placed on this voltage line as needed depending on the nature of the supply voltage and layout. 8nc no connect pkg base gnd the center metal base of the qfn package provides dc and rf ground as well as heat sink for the amplifier.
4 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic gnd rf out j2 3 4 5 6 7 8 1 2 rf in j1 lna_en vdd c1 dnp p1 1 2 3
5 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout
6 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . application schematic - 4.9ghz to 5.85ghz 50 ? ? strip j1 rf in lna en 50 ? ? strip j3 ant c1 1 uf vdd 3 4 5 6 8 7 1 2 * note: *if dc voltage is at pin 5 from the device after the lna, then an external dc-blocking capacitor is needed due to the internal shunt inductor on pin 5 as shown in the schematic above. ** on the evaluation board adding c1, which is 1 uf, did not make any difference but could be needed depending on the layout and the nature of the supply voltage used in the system.
7 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 micr o- inch to 8 micro-inch gold over 180 micro-inch nickel. pcb land pattern recommendation * pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirica l data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. pcb metal land pattern pcb solder mask pattern
8 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pcb stencil pattern note: thermal vias for center slug ?c? should be incorporated into the pcb design. the number and size of thermal vias will depend on the application. example of th e number and size of vias can be foun d on the rfmd evaluation board layout.
9 of 9 rf5515 ds111025 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com .

typical iip3 versus frequency v dd = 3.0, lna_en = 3.0v, over temperature range
! "#
! "#
! "#
$ "#
$"# % % % %
&& ' typical i dd versus frequency v dd = 3.0, lna_en = 3.0v, over temperature range && ! "# && ! "# && ! "# && $ "# && $"# % % %

% %
( typical nf versus frequency v dd = 3.0, lna_en = 3.0v, over temperature range ( ! "# ( ! "# ( ! "# ( $ "# ( $"# $ $ $ $ $ $ $ $ $ $ $ $ $ $$$$$ ( )*+ typical p in versus p out at 5.45ghz at v dd = 3.0, lna_en = 3.0v, over temperature range ( ,-- )*+ ! "# ( ,-- )*+ ! "# ( ,-- )*+ ! "# ( ,-- )*+ $ "# ( ,-- )*+ $"# 0 2 4 6 8 10 12 14 16 18 20 4900 5000 5100 5200 5300 5400 5500 5600 5700 5800 gain(db) frequency(mhz) typical gain versus frequency v dd = 3.0, lna_en = 3.0v, at p -25 dbm, ver emp
ange gain +85 " c . ain +75 " c gain +25 " c gain -15 " c gain -40 " c -20 -15 -10 -5 0 5 10 15 3.9 4.4 4.9 5.4 5.9 6.4 6.9 gain, return loss (db) freq (ghz) typical s-plots at v dd = 3.0, lna_en = 3.0v s21 (db) s11 (db)

▲Up To Search▲

Price & Availability of RF5515PCK-410

	To Download RF5515PCK-410 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .