hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH8201PBF pqfn 5mm x 6 mm tape and reel 4000 irfh8201trpbf v dss 25 v r ds(on) max (@ v gs = 10v) 0.95 ? (@ v gs = 4.5v) 1.60 qg (typical) 56 nc i d (@t c (bottom) = 25c) 100 ? a m ???? ? ? pqfn 5x6 mm features benefits low r dson (<0.95m ? ) lower conduction losses low thermal resistance to pcb (<0.8c/w) enable better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 49 a i d @ t c (bottom) = 25c continuous drain current, v gs @ 10v 324 ?? ? i d @ t c (bottom) = 100c continuous drain current, v gs @ 10v 205 ?? ? i dm pulsed drain current 400 ? p d @t a = 25c power dissipation ? 3.6 w p d @t c (bottom) = 25c power dissipation ? 156 linear derating factor ? 0.029 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 100 ? ? applications ?? or-ing mosfet for 12v (typical) bus in-rush current ?? battery operated dc motor inverters strong ir fet? IRFH8201PBF 1 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013
? IRFH8201PBF 2 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 25 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 20 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.80 0.95 v gs = 10v, i d = 50a ? ??? 1.20 1.60 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.35 1.80 2.35 v v ds = v gs , i d = 150a ? v gs(th) gate threshold voltage coefficient ??? -6.1 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 20v, v gs = 0v ??? ??? 150 v ds = 20v, v gs = 0v, t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 181 ??? ??? s v ds = 10v, i d = 50a q g total gate charge ??? 111 ??? nc v gs = 10v, v ds = 13v, i d = 50a q g total gate charge ??? 56 84 q gs1 pre-vth gate-to-source charge ??? 16 ??? ? v ds = 13v q gs2 post-vth gate-to-source charge ??? 7.0 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 18 ??? ? i d = 50a q godr gate charge overdrive ??? 15 ??? ? q sw switch charge (q gs2 + q gd ) ??? 25 ??? ? q oss output charge ??? 39 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.1 ??? ? ? t d(on) turn-on delay time ??? 27 ??? v dd = 13v, v gs = 4.5v t r rise time ??? 54 ??? ns i d = 50a t d(off) turn-off delay time ??? 31 ??? ? r g =4.7 ? t f fall time ??? 22 ??? ? c iss input capacitance ??? 7330 ??? v gs = 0v c oss output capacitance ??? 1730 ??? pf v ds = 13v c rss reverse transfer capacitance ??? 850 ??? ? ? = 1.0mhz avalanche characteristics ???? parameter typ. max. units e as single pulse avalanche energy ? ??? 437 ? mj diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 400 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s = 50a, v gs = 0v ? t rr reverse recovery time ??? 25 38 ns t j = 25c, i f = 50a, v dd = 13v q rr reverse recovery charge ??? 57 86 nc di/dt = 400a/s ? m ?? ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? 0.5 0.8 r ? jc (top) junction-to-case ? ??? 21 c/w r ? ja junction-to-ambient ? ??? 35 r ? ja (<10s) junction-to-ambient ? ??? 20 thermal resistance
? IRFH8201PBF 3 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.75v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.75v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 50a
? IRFH8201PBF 4 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.2 1.6 2.0 2.4 2.8 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 350 i d , d r a i n c u r r e n t ( a ) limited by package
? IRFH8201PBF 5 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 fig 12. on? resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: pu lse current vs. pulse width 25 50 75 100 125 150 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 15a 24a bottom 50a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 1.0 2.0 3.0 4.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? IRFH8201PBF 6 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms
? IRFH8201PBF 7 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? IRFH8201PBF 8 www.irf.com ? 2013 international rectifier submit datasheet feedback october 23, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 5x6 outline "b" tape and reel ? qualification standards can be found at international rectifier?s web site : http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standard at the time of product release. notes: ? ? starting t j = 25c, l = 0.35mh, r g = 50 ? , i as = 50a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. ? current is limited to 100a by source bonding technology. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ qualifiction information ? ? qualification level ? industrial ? (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes revision history date comments 10/23/13 added rdson @ 4.5v-page1, 2
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