ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead v illage drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1617AB5 5 watts pep, 26 volts, class ab linear 1600 - 1700 mhz general description case outline the 1617AB5 is a common emitter transistor capable of providing 5 watts pep of class ab, rf output power over the band 1626- 1660 mhz. this transistor is specifically designed for satcom base station amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. 55cw common emitter absolute maximum ratings maximum power dissipation @ 25 c 20 watts o maximum voltage and current bvces collector to emitter voltage 55 volts lvceo collector to emitter voltage 27 volts bvebo emitter to base voltage 3.5 volts ic collector current 2.0 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units p-1db pg power gain icq = 20 mampsvcc= 26v imd 3 vswr power out 1 db comp pt. f =1660 mhz intermod. distortion -3rd 5 w pep, two tone load mismatch tolerance 5 watt 9.0 11 db -32 dbc 6:1 bvces bvceo bvebo ices h fe cob q jc collector to emitter breakdown ic = 15 ma 55 volts collector to emitterbreakdown ic = 15 ma 27 volts emitter to base breakdown ie = 10 ma 3.5 volts collector leakage current vce = 26 volts 5 ma dc - current gain 20 100 output capacitance 6 pf thermal resistance 6.0 c/w vce = 5 v, ic =0.1 a f =1 mhz, vcb = 28 v tc = 25 c o o issue a, february 1997
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