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cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 1/12 MTBA6C12Q8 cystek product specification n- and p-channel logic level enhancement mode mosfet MTBA6C12Q8 n-ch p-ch bv dss 120v -120v i d @ v gs =10v(-10v) 2a -1.7a r dson (typ.) @v gs =(-)10v 178 m 246 m r dson (typ.) @v gs =(-)4.5v 185 m 276 m description the MTBA6C12Q8 consists of a n-channel and a p-channel enhancement-mode mosfet in a single sop-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTBA6C12Q8-0-t3-g sop-8 (pb-free lead plating & halogen-free package) 2500 pcs / tape & reel MTBA6C12Q8 sop-8 g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 2/12 MTBA6C12Q8 cystek product specification absolute maximum ratings (t c =25c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 120 -120 gate-source voltage v gs 2 20 2 20 v t c =25 c, v gs =10v (-10v) 3.5 -3.0 continuous drain current t c =100 c, v gs =10v (-10v) i d 2.5 -2.1 t a =25 c, v gs =10v (-10v) 2.0 -1.7 continuous drain current (note 2) t a =70 c, v gs =10v (-10v) i dsm 1.7 -1.4 pulsed drain current (note 1) i dm 10 -8 a power dissipation for dual operation @t c =25 c p d 6 power dissipation for dual operation @t a =25 c 3 1.9 (note 2) power dissipation for single operation @t a =25 c p dsm 1.1 (note 3) w operating junction and storage te mperature range tj; tstg -55~+175 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 25 50 78 (note 2) thermal resistance, junction-to-ambient, max r th,j-a 135 (note 3) c/w note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s, single operation. 3.surface mounted on minimum copper pad, pulse width 10s, single operation. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 120 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.1 - v/ c reference to 25c, i d =250 a v gs(th) 1.3 - 2.3 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 a v ds =96v, v gs =0v i dss - - 10 a v ds =96v, v gs =0, tj=55 c - 178 230 i d =2a, v gs =10v *r ds(on) - 185 250 m i d =1.5a, v gs =4.5v *g fs - 6.3 - s v ds =10v, i d =2a dynamic ciss - 298 - coss - 29 - crss - 14 - pf v ds =25v, v gs =0, f=1mhz
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 3/12 MTBA6C12Q8 cystek product specification *td (on) - 3.4 - *tr - 16.2 - *td (off) - 13.4 - *tf - 25.4 - ns v ds =75v, i d =1a, v gs =10v, r g =6 *qg - 8 - *qgs - 0.9 - *qgd - 2.3 - nc v ds =96v, i d =2a, v gs =10v body diode *i s - - 2 *i sm - - 10 a *v sd - 0.79 1.3 v v gs= 0v, i s =2a trr * - 22 - ns qrr * - 25 - nc i f =2a, dif/dt=100a/ s p-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -120 - - v v gs =0v, i d =-250 a bv dss / tj - -0.09 - v/ c reference to 25c, i d =-250 a v gs(th) -1.3 - -2.3 v v ds =vgs, i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-96v, v gs =0v i dss - - -10 a v ds =-96v, v gs =0, tj=55 c - 246 310 i d =-1.5a, v gs =-10v *r ds(on) - 276 340 m i d =-1a, v gs =-4.5v *g fs - 4 - s v ds =-10v, i d =-1.5a dynamic ciss - 695 - coss - 48 - crss - 23 - pf v ds =-25v, v gs =0, f=1mhz *td (on) - 7 - *tr - 17 - *td (off) - 40 - *tf - 49 - ns v ds =-75v, i d =-1a, v gs =-10v, r g =6 *qg - 13.5 - *qgs - 1.8 - *qgd - 3.2 - nc v ds =-96v, i d =-1.5a, v gs =-10v body diode *i s - - -1.7 *i sm - - -8 a *v sd - -0.76 -1.3 v v gs =0v, i s =-1.5a trr * - 19 - ns qrr * - 19 - nc i f =1.5a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 4/12 MTBA6C12Q8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 2 4 6 8 10 012345 v ds , drain-source voltage(v) i d , drain current(a) v gs =2.5v 10v, 9v, 8v, 7v, 6v, 5v,4v,3.5v,3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =2.5v v gs =3v v gs =4.5v 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =2a r ds( on) @tj=25c : 178m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =2a
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 5/12 MTBA6C12Q8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 024681 qg, total gate charge(nc) v gs , gate-source voltage(v) 0 i d =2a v ds =96v v ds =60v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds( on) limit t a =25c, tj=175c, v gs =10v r ja =78c/w,single pulse 1s 100ms maximum drain current vs junction temperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maximum drain current(a) t a =25c, tj=175c,v gs =10v r ja =78c/w
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 6/12 MTBA6C12Q8 cystek product specification typical characteristics(cont.) : q1( n-channel) single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =175c t a =25c ja =78c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =78 c/w
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 7/12 MTBA6C12Q8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 2 4 6 8 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -v ds , drain-source voltage(v) -i d , drain current (a) -10v -9v -8v -7v -6v -5v -4v -3.5v -3v v gs =-2.5v static drain-source on-state resistance vs drain current 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-3v v gs =-10v v gs =-2.5v i d =-250 a, v =0v gs source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0246810 -i s , source drain current(a) -v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 100 200 300 400 500 600 700 800 900 1000 024681 -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) 0 i d =-1.5a drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-1.5a r ds( on) @tj=25c : 246m typ. ?
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 8/12 MTBA6C12Q8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) -v gs(th) , threshold voltage(v) i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-1.5a v ds =-96v v ds =-60v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=175c, v gs =-10v ja =78c/w, single pulse 1s 1ms maximum drain current vs junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, tj=175c, v gs =-10v r ja =78c/w
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 9/12 MTBA6C12Q8 cystek product specification typical characteristics(cont.) : q2(p-channel) single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =175c t a =25c ja =78c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =78 c/w recommended soldering footprint
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 10/12 MTBA6C12Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 11/12 MTBA6C12Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c973q8 issued date : 2014.09.23 revised date : page no. : 12/12 MTBA6C12Q8 cystek product specification sop-8 dimension marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name ba6 c12 *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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