FW360 no.7556-1/6 specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit n-channel p-channel drain-to-source voltage v dss 100 --100 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 2 --2 a drain current (pw 100ms) i d duty cycle 1% 5 --5 a drain current (pw 10 m s) i dp duty cycle 1% 8 --8 a allowable power dissipation p d mounted on a ceramic board (1200mm 2 5 0.8mm)1unit(pw 10s) 1.4 1.8 w total dissipation p t mounted on a ceramic board (1200mm 2 5 0.8mm)(pw 10s) 2.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 100 v zero-gate voltage drain current i dss v ds =100v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =1a 1.8 3 s marking : w360 continued on next page. features ? the FW360 incorporates an n-channel mosfet and a p-channel mosfet that feature low on-resistance and high-speed switching, thereby enabling high-density mounting. ? excellent on-resistance characteristic. ? 4v drive. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7556 FW360 package dimensions unit : mm 2129 [FW360] gi im any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel and p-channel silicon mosfets ultrahigh-speed switching, motor driver applications 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 14 5 8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.5 0.1 1.8max 0.43 31504 ts im ta-100617 preliminary
FW360 no.7556-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit static drain-to-source on-state resistance r ds (on)1 i d =1a, v gs =10v 175 220 m w r ds (on)2 i d =1a, v gs =4v 220 310 m w input capacitance ciss v ds =20v, f=1mhz 530 pf output capacitance coss v ds =20v, f=1mhz 45 pf reverse transfer capacitance crss v ds =20v, f=1mhz 35 pf turn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 4 ns turn-off delay time t d (off) see specified test circuit. 58 ns fall time t f see specified test circuit. 25 ns total gate charge qg v ds =10v, v gs =10v, i d =2a 13 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =2a 2.1 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =2a 2.8 nc diode forward voltage v sd i s =2a, v gs =0 0.82 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --100 v zero-gate voltage drain current i dss v ds =--100v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--1a 1.8 3 s static drain-to-source on-state resistance r ds (on)1 i d =--1a, v gs =--10v 240 315 m w r ds (on)2 i d =--1a, v gs =--4v 320 450 m w input capacitance ciss v ds =--20v, f=1mhz 935 pf output capacitance coss v ds =--20v, f=1mhz 71 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 48 pf turn-on delay time t d (on) see specified test circuit. 12 ns rise time t r see specified test circuit. 50 ns turn-off delay time t d (off) see specified test circuit. 92 ns fall time t f see specified test circuit. 52 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--2a 20 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--2a 4.5 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--2a 4.5 nc diode forward voltage v sd i s =--2a, v gs =0 0.83 1.2 v switching time test circuit [n-channel] [p-channel] electrical connection 10v 0v v in FW360 i d =1a r l =50 w v dd =50v pw=10 m s d.c. 1% p. g 50 w g s d v out v in 0v --10v v in FW360 i d = --1a r l =50 w v dd = --50v pw=10 m s d.c. 1% p. g 50 w g s d v out v in (top view) 1 2 3 4 8 7 6 5 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1
FW360 no.7556-3/6 it05950 it05952 it05954 it05956 it005951 it05955 it05957 it05953 static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v ambient temperature, ta -- c ambient temperature, ta -- c [pch] [pch] [pch] [pch] [nch] [nch] [nch] [nch] 0 --2 --4 --6 --8 150 200 250 300 350 400 450 500 550 600 100 150 200 250 300 350 400 450 500 550 600 100 --14 --12 --10 --16 --18 --20 r ds (on) -- v gs 0 0 --0.8 --1.0 --1.2 --1.4 --1.6 --2.0 --1.8 --0.4 --0.6 --0.2 --0.4 --0.6 --0.2 0 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --2.0 --1.6 --1.8 --1.2 --1.4 i d -- v ds 0 --1.0 --2.0 --3.0 --4.0 --5.0 i d -- v gs r ds (on) -- ta --60 --40 --20 0 20 40 60 80 100 120 140 --0.8 --1.0 --8.0v --6.0v --5.0v --4.0v --3.5v --10v v gs = --3.0v v ds = --10v ta=25 c 75 c --25 c i d = --1a, v gs = --4v i d = --1a , v gs = --10 v ta= 25 c 0 0 0.8 1.0 1.2 1.4 1.6 2.0 1.8 0.4 0.6 0.2 0.4 0.6 0.2 2.0 1.6 1.8 1.2 1.4 i d -- v ds 0.8 1.0 v gs =3.0v 3.5v 8.0v 6.0v 4.0v 4.5v 10v 0 6 5 4 3 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d -- v gs v ds =10v 75 c ta=25 c --25 c 02468 400 50 100 150 200 250 300 350 14 12 10 16 18 20 r ds (on) -- v gs ta= 25 c 100 150 200 250 300 350 400 50 r ds (on) -- ta --60 --40 --20 0 20 40 60 80 100 120 140 160 i d =1a, v gs =4v i d = 1a , v gs = 10 v i d =1a i d = --1a
FW360 no.7556-4/6 it05958 it05959 it05960 it05962 it05964 it05961 it05965 it05963 drain current, i d -- a forward transfer admittance, ? y fs ? -- s drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v forward current, i f -- a drain current, i d -- a switching time, sw time -- ns [pch] [nch] [pch] [pch] [nch] [nch] [nch] [pch] 0.01 1.0 0.1 23 57 1.0 2357 23 57 10 7 5 3 2 0.1 5 7 3 2 10 ? y fs ? -- i d v ds =10v ta=25 c --25 c 75 c 0.6 0.2 0.4 0.8 1.0 1.2 i f -- v sd 0 0.01 10 1.0 0.1 7 5 3 2 7 5 3 2 7 5 3 2 ta= 75 c --25 c 25 c v gs =0 10 100 1.0 --0.1 --1.0 23 57 --10 23 5 7 3 5 2 7 3 5 2 3 2 7 sw time -- i d t f t r t d (on) v dd =50v v gs =10v t d (off) 0 100 1000 10 3 5 7 2 5 7 2 3 30 10 15 20 25 5 ciss, coss, crss -- v ds 0 100 1000 10 3 5 7 2 5 7 2 3 5 2 3 --30 --10 --15 --20 --25 -- 5 ciss, coss, crss -- v ds f=1mhz ciss coss crss 100 10 --0.1 --1.0 23 57 --10 23 5 7 3 5 2 7 5 3 2 sw time -- i d v dd = --50v v gs = --10v t d (off) t f t r t d (on) --0.6 --0.7 --0.4 --0.5 --0.8 --0.9 --1.0 i f -- v sd --0.3 --0.01 --10 --1.0 --0.1 7 5 3 2 7 5 3 2 7 5 3 2 ta= 75 c 25 c --25 c v gs =0 --0.01 1.0 --0.1 23 57 --1.0 2357 23 57 --10 7 5 3 2 0.1 5 7 3 2 10 ? y fs ? -- i d v ds = --10v ta=25 c --25 c 75 c f=1mhz ciss coss crss
FW360 no.7556-5/6 --0.01 it05970 it05968 it05966 it05972 [nch, pch] it05969 ambient temperature, ta -- c allowable power dissipation, p d -- w allowable power dissipation (fet1), p d -- w allowable power dissipation (fet2), p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a it05971 ambient temperature, ta -- c allowable power dissipation, p d -- w [pch] [nch] [pch] [pch] [nch] [nch] 0 0 8 7 9 14 12 10 4 28 6 10 2 1 4 3 6 5 v gs -- qg v ds =50v i d =2a a s o 2 3 5 7 2 3 5 7 2 3 5 7 2 10 1.0 0.1 0.01 23 57 0.01 0.1 23 57 1.0 23 57 10 23 57 100 2 1ms 10ms 100ms operation in this area is limited by r ds (on). i dp =2a i dp =8a 0 0 20 40 60 80 100 120 1.5 1.4 1.0 0.5 2.5 2.0 140 160 p d -- ta 1 unit 0 0 20 40 60 80 100 120 1.5 1.8 1.0 0.5 2.5 2.0 140 160 p d -- ta 1 unit 0 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.4 1.2 1.0 0.6 0.4 0.2 0.8 1.6 2.0 a s o 2 3 5 7 2 3 5 7 2 3 5 7 2 --10 --1.0 --0.1 23 57 23 57 --0.1 --1.0 --10 22 357 --100 operation in this area is limited by r ds (on). i dp = --8a i dp = --2a 1ms 10ms 100ms 0 0 -- 8 -- 7 -- 9 20 16 14 18 12 10 4 28 6 --10 -- 2 -- 1 -- 4 -- 3 -- 6 -- 5 v gs -- qg v ds = --50v i d = --2a p d (fet1) -- p d (fet2) ta=25 c single pulse mounted on a ceramic board (1200mm 2 5 0.8mm)1unit ta=25 c single pulse mounted on a ceramic board (1200mm 2 5 0.8mm)1unit dc operation(pw 10s) dc operation(pw 10s) < 100 m s < 100 m s mounted on a ceramic board (1200mm 2 5 0.8mm) mounted on a ceramic board (1200mm 2 5 0.8mm) pw 10s pw 10s total dissipation total dissipation mounted on a ceramic board (1200mm 2 5 0.8mm)pw 10s total gate charge, qg -- nc gate-to-source voltage, v gs -- v it05967 total gate charge, qg -- nc gate-to-source voltage, v gs -- v
FW360 no.7556-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2004. specifications and information herein are subject to change without notice. ps
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