v cbo collector-base voltage 20 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 1.5 v i c collector current 60 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c bipolarics, inc. part number B12V114B npn low noise silicon microwave transistor symbol parameters rating units symbol parameters & conditions unit min. typ. max. f t gain bandwidth product ghz 10.0 v ce = 8v, i c = 25 ma unless stated absolute maximum ratings: product d a t a sheet v ce = 8v, i c =25 ma c cb collector base capacitance: v cb = 8v f = 1mhz pf 0.25 |s 21 | 2 insertion power gain: f = 1.0 ghz db 7.10 f = 2.0 ghz db 5.60 p 1d b power output at 1db compression: f = 1.0 ghz dbm 21.0 g 1d b gain at 1db compression: f = 1.0 ghz dbm 15.0 h fe forward current transfer ratio: f = 1mhz 30 150 300 i cbo collector cutoff current : v cb = 8v a 0.2 i ebo emitter cutoff current : v eb = 1v a 1.0 performance d ata: electrical characteristics (t a = 25 o c) ceramic micro-x package available features: common base high gain bandwidth product f t = 10 ghz typ @ i c = 25ma high gain |s 21 | 2 = 7.10 db @ 1.0 ghz 5.60 db @ 2.0 ghz high reliability gold metallization nitride passivation low cost
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