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| savantic semiconductor product specification silicon pnp power transistors 2sA1105 d escription with to-3pn package high frequency high power dissipation applications audio power amplifer applications dc-dc converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -6 v i c collector current -9 a p c collector power dissipation t c =25 90 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2sA1105 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -120 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v v besat base-emitter saturation voltage i c =-3a; i b =-0.3a -1.8 v i cbo collector cut-off current v cb =-120v; i e =0 -100 a i ebo emitter cut-off current v eb =-6v; i c =0 -100 a h fe dc current gain i c =-3a ; v ce =4v 50 180 f t transition frequency i e =1a ; v ce =-12v 20 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2sA1105 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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