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this is information on a product in full production. june 2014 docid026299 rev 1 1/32 rhr801 rad-hard very high-speed comparator datasheet - production data features ? propagation time of 7 ns ? rise/fall time: 1.1 ns on 10 pf ? low consumption: 1.4 ma ? single supply: 3 v to 5 v ? 100 krad high-dose rate ? sel-free up to 120 mev.cm2/mg ? set characterized applications ? high-speed timing ? high-speed sampling ? clock recovery ? clock distribution ? phase detectors description the rhr801 is a very high-speed single comparator. it is designed to allow very high rise and fall times while drawing a high noise supply rejection. it uses a high-speed complementary bicmos process to achieve its very good speed/power ratio and its high tolerance to radiation. the rhr801 is mounted in a hermetic flat-8 package. 1& ,1 ,1 9&& 1& 287 9&& 1& ceramic flat-8 the upper metallic lid is not connected to any pins, nor to the ic die inside the package pin connections (top view) table 1. device summary order code smd pin quality l evel package lead finish mass eppl (1) 1. eppl = esa preferred part list temp. range RHR801K1 - engineering model flat-8 gold 0.45 g - -55 to +125 c rhr801k-01v 5962-10215 qml-v flight target www.st.com
contents rhr801 2/32 docid026299 rev 1 contents 1 absolute maximum ratings and operating c onditions . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 radiations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 electrical characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 parameters and implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.1 static input features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.2 dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.3 characteristics of the output stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.4 impedance matching for dynamic measurements . . . . . . . . . . . . . . . . . . 21 5.5 implementation on the board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.6 application examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.6.1 inverting comparator with hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.6.2 fast signal recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.6.3 10 mhz rc oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.1 ceramic flat-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 7 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 8 other information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 8.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 8.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
docid026299 rev 1 3/32 rhr801 absolute maximum ratings and operating conditions 32 1 absolute maximum ratings and operating conditions table 2. absolute maximum ratings symbol parameter value unit v cc supply voltage (1) 1. v cc is defined as the voltage between the vcc+ and v cc- pins. the comparator can be used in single supply (for example, vcc+ = 5 v, vc c- = 0 v) or dual supply (for exampl e, vcc+ = 2.5 v, vcc- = -2.5 v). 6 v v id differential input voltage (2) 2. differential voltages are the non-inverting input terminal with respect to the inverting input terminal. vid should not exceed 2 v. diodes should be placed externally between the inputs should this voltage be beyond this range 2 v in (3) 3. if the input voltage goes beyond the rails (above vcc+ or below vcc-), the esd diodes may be activated. it is required in that case to limit the input current to 10 ma with a serial resistor connected on the input. input voltage (v cc - ) - 0.3 v to (v cc + ) + 0.3 v t stg storage temperature range -65 to +150 c t j maximum junction temperature 150 r thja thermal resistance junction-to-ambient (4) flat-8 4. short-circuits can cause exce ssive heating and destructive diss ipation. values are typical. 125 c/w r thjc thermal resistance junction-to-case (4) flat-8 40 esd hbm: human body model (5) mm: machine model (6) cdm: charged device model (7) 5. human body model: a 100 pf capacitor is charged to the specified voltage, then discharged through a 1.5 k resistor between two pins of the device. this is done for all couples of connected pin combinations while the other pins are floating. 6. machine model: a 200 pf capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 ). this is done for all couples of connected pin combinations whil e the other pins are floating. 7. charged device model: all pins and the package are charged together to the specified voltage and then discharged directly to ground through only one pin. this is done for all pins. 3.5 0.35 0.9 kv t lead lead temperature (soldering, 10 sec) 260 c table 3. operating conditions symbol parame ter value unit v cc supply voltage 3 to 5 v v icm common-mode input voltage range (v cc- )+0.5 v to (v cc+ )- 1.2 v t oper operating free-air temperature range -55 to +125 c
electrical characteristics rhr801 4/32 docid026299 rev 1 2 electrical characteristics 4 table 4. v cc+ = +3.3 v, v cc- = 0 v (unless otherwise specified) symbol parameter test conditions temp. min. typ. max. unit input characteristics (see figure 35 ) v io input offset voltage v icm = v cc /2 +125c -8.0 8.0 mv +25c -7.0 -0.2 7.0 -55c -8.0 8.0 v trip+ high input threshold v icm = v cc /2 +125c -8.0 8.0 +25c -7.0 1.1 7.0 -55c -8.0 8.0 v trip- low input threshold v icm = v cc /2 +125c -8.0 8.0 +25c -7.0 -1.5 7.0 -55c -8.0 8.0 v hyst hysteresis v icm = v cc /2 +25c 1.5 2.5 4.0 i ib input bias current v icm = v cc /2 +125c -4 -2.2 0.0 a +25c -5 -2.5 0.0 -55c -7 -3.5 0.0 c in input capacitance +25c 5 pf dynamic performances (see figure 36 , figure 37 , figure 38 ) t plh logic "0" to logic "1" propagation time 150 mv step, c l = 10 pf 50 mv overdrive v icm = v cc /2 +125c 7.0 8.8 12.0 ns +25c 6.0 8.1 9.5 -55c 6.0 8.1 9.5 200 mv step, c l = 10 pf 100 mv overdrive v icm = v cc /2 +125c 6.5 8.0 10.5 +25c 5.5 7.8 9.0 -55c 5.5 7.8 9.0 t phl logic "1" to logic "0" propagation time 150 mv step, c l = 10 pf 50 mv overdrive v icm = v cc /2 +125c 7.0 9.0 12.0 +25c 6.0 8.3 9.5 -55c 6.0 8.3 9.5 200 mv step, c l = 10 pf 100 mv overdrive v icm = v cc /2 +125c 6.5 7.9 10.5 +25c 5.5 7.7 9.0 -55c 5.5 7.7 9.0 t r output rise time 20% to 80% 200 mv step, c l =10 pf +25c 1.4 t f output fall time 80 % to 20 % 200 mv step, c l = 10 pf +25c 1.4 ns
docid026299 rev 1 5/32 rhr801 electrical characteristics 32 f max maximum input frequency v in = 1 v p-p sine wave c l = 10 pf, output duty cycle between 45 % and 55 % +125c 60 74 mhz +25c 55 72 -55c 50 68 output characteristics v oh logic "1" voltage i source = 3.3 ma +125c 3.00 3.10 3.30 v +25c 3.05 3.14 3.30 -55c 3.10 3.18 3.30 v ol logic "0" voltage i sink = -3.3 ma +125c 0 200 300 mv +25c 0 170 250 -55c 0 150 200 i sink output sink current v out = v cc+ +125c 14 17 20 ma +25c 18 20 22 -55c 19 22 26 i source output source current v out = v cc- +125c 17 20 23 +25c 20 22 25 -55c 22 25 29 power supply i cc-h high output supply current no load v id = +0.1 v +125c 1.40 1.55 2.10 ma +25c 1.20 1.44 1.60 -55c 0.95 1.13 1.30 i cc-l low output supply current no load v id = -0.1 v +125c 1.60 1.75 2.3 +25c 1.30 1.63 1.80 -55c 1.00 1.30 1.50 svr supply voltage rejection ratio ( v cc / v io ) v cc = 3 to 3.6 v v icm = 1.65 v +125c 42 65 db +25c 55 70 -55c 45 65 cmrr common-mode rejection ratio ( v ic / v io ) v icm = 0.5 v to v cc -1.2 v +125c 50 95 +25c 70 80 -55c 60 85 table 4. v cc+ = +3.3 v, v cc- = 0 v (unless otherwise specified) (continued) symbol parameter test conditions temp. min. typ. max. unit
electrical characteristics rhr801 6/32 docid026299 rev 1 4 table 5. v cc+ = +5 v, v cc- = 0 v (unless otherwise specified) symbol parameter test conditions temp. min. typ. max. unit input characteristics (see figure 35 ) v io input offset voltage v icm = v cc /2 +125c -8.0 8.0 mv +25c -7.0 -0.2 7.0 -55c -8.0 8.0 v trip+ high input threshold v icm = v cc /2 +125c -8.0 8.0 +25c -7.0 1.1 7.0 -55c -8.0 8.0 v trip- low input threshold v icm = v cc /2 +125c -8.0 8.0 +25c -7.0 -1.5 7.0 -55c -8.0 8.0 v hyst hysteresis v icm = v cc /2 +25c 1.5 2.5 4.0 i ib input bias current v icm = v cc /2 +125c -4 -2.2 0.0 a +25c -5 -2.5 0.0 -55c -7 -3.5 0.0 c in input capacitance +25c 5 pf dynamic performances (see figure 36 , figure 37 , figure 38 ) t plh logic "0" to logic "1" propagation time 150 mv step, c l = 10 pf 50 mv overdrive v icm = v cc /2 +125c 6.0 7.9 10 ns +25c 6.0 8.1 9.5 -55c 6.0 8.1 9.5 200 mv step, c l = 10 pf 100 mv overdrive v icm = v cc /2 +125c 6.5 8.0 10.5 +25c 5.5 7.8 9.0 -55c 5.5 7.8 9.0 t phl logic "1" to logic "0" propagation time 150 mv step, c l = 10 pf 50 mv overdrive v icm = v cc /2 +125c 7.0 9.0 12.0 +25c 6.0 8.3 9.5 -55c 6.0 8.3 9.5 200 mv step, c l = 10 pf 100 mv overdrive v icm = v cc /2 +125c 6.5 7.9 10.5 +25c 5.5 7.7 9.0 -55c 5.5 7.7 9.0 t r output rise time 20% to 80% 200 mv step, c l = 10 pf +25c 1.4 t f output fall time 80% to 20% 200 mv step, c l = 10 pf +25c 1.4 f max maximum input frequency v in = 1 v p-p sine wave c l = 10 pf, output duty cycle between 45 % and 55 % +125c 60 74 mhz +25c 55 72 -55c 50 68
docid026299 rev 1 7/32 rhr801 electrical characteristics 32 output characteristics v oh logic "1" voltage i source = 5 ma +125c 4.60 4.70 5.00 v +25c 4.70 4.83 5.00 -55c 4.80 4.87 5.00 v ol logic "0" voltage i sink = -5 ma +125c 0 240 400 mv +25c 0 200 300 -55c 0 180 200 i sink output sink current v out = v cc+ +125c 25 30 35 ma +25c 30 35 40 -55c 30 40 45 i source output source current v out = v cc- +125c 35 40 45 +25c 40 45 50 -55c 45 50 55 power supply i cc-h high output supply current no load v id = +0.1 v +125c 1.50 1.84 2.30 ma +25c 1.30 1.59 1.80 -55c 1.00 1.25 1.50 i cc-l low output supply current no load v id = -0.1 v +125c 1.80 2.10 2.50 +25c 1.50 1.81 2.00 -55c 1.20 1.43 1.70 svr supply voltage rejection ratio ( v cc / v io ) v cc = 4.5 to 5 v v icm = 2.375 v +125c 50 75 db +25c 60 80 -55c 50 75 cmrr common-mode rejection ratio ( v ic / v io ) v icm = 0.5 v to v cc -1.2 v +125c 60 75 +25c 70 80 -55c 60 75 table 5. v cc+ = +5 v, v cc- = 0 v (unless otherwise specified) (continued) symbol parameter test conditions temp. min. typ. max. unit
radiations rhr801 8/32 docid026299 rev 1 3 radiations total ionizing dose (mil-std-883 tm 1019) the products guaranteed in radiation within the rha qml-v system fully comply with the mil-std-883 tm 1019 specification. the rhr801 is rha qml-v tested and ch aracterized in full compliance with the mil-std-883 specification, both below 10 mrad/s and between 50 and 300 rad/s. these parameters are shown in table 7 and table 8 (high-dose rate) and table 9 and table 10 (low-dose rate), as follows: ? all test are performed in accordance with mil-prf-38535 and test method 1019 of mil-std-883 for total ionizing dose (tid). ? the initial characterization is performed in qualification only on both biased and unbiased parts, on a sample of ten units from two different wafer lots. ? each wafer lot is tested at both high and low dose rate s, in the worst bias case condition, based on the results obtained during the initial qualification. heavy ions the behavior of the product when submitted to heavy ions is not tested in production. heavy-ion trials are performe d on qualification lots only. table 6. radiations type characteristics value unit tid 180 krad/h high-dose rate (50 rad/sec) up to: 100 krad 36 rad/h low-dose rate (0.01 rad/sec) up to: 30 (1) heavy-ions sel immunity up to: (at 125 c, with a particle angle of 60 ) 120 mev.cm2/mg sel immunity up to: (at 125 c, with a particle angle of 0 ) 60 set (at 25 c) characterized 1. using the comparator beyond the maximum operating voltage (5 v) may result in significant overconsumption following low-dose rate radiation at 5.5 v (30 krad at 36 rad/h) and could lead to functional interrupt above 30 krad at 36 rad/h
docid026299 rev 1 9/32 rhr801 radiations 32 table 7. drift after 300 krad and after annealing, during 24 h @ 25 c and 168 h at 100 c, 180 krad/h high-dose rate, v cc+ = +3.3 v, v cc- = 0 v, t = 25 c, (unless otherwise specified) symbol min typ max unit delta vio -0.72 -0.03 0.43 mv delta vtrip+ -0.72 0.01 0.52 delta vtrip- -0.88 -0.08 0.61 delta iib -0.51 -0.11 0.15 a delta tplh (150 mv step) 0.06 0.28 0.49 ns delta tplh (200 mv step) -0.01 0.22 0.53 delta tphl (150 mv step) -0.03 0.14 0.40 delta tphl (200 mv step) -0.02 0.15 0.36 delta tr 0.04 0.11 0.21 delta tf -0.20 -0.07 0.12 delta fmax -16.00 -2.70 4.00 mhz delta icc-h -0.01 0.01 0.02 ma delta icc-l 0.00 0.01 0.03 delta voh 0.00 0.00 0.00 mv delta vol -4.68 -0.52 4.68 delta isink -0.54 -0.03 0.28 ma delta isource -0.39 -0.33 -0.28 delta svr -10.30 -1.86 7.61 db delta cmrr -3.67 -0.10 7.40
radiations rhr801 10/32 docid026299 rev 1 table 8. drift after 300 krad and after annealing, during 24 h @ 25 c and 168 h at 100 c, 180 krad/h high-dose rate, v cc+ = +5 v, v cc- = 0 v, t = 25 c, (unless otherwise specified) symbol min typ max unit delta vio -0.89 -0.01 0.68 mv delta vtrip+ -0.92 -0.02 0.68 delta vtrip- -0.86 0.00 0.68 delta iib -0.84 -0.24 0.25 a delta tplh (150 mv step) -0.16 0.08 0.27 ns delta tplh (200 mv step) -0.10 0.15 0.51 delta tphl (150 mv step) 0.01 0.13 0.28 delta tphl (200 mv step) -0.16 0.06 0.33 delta tr 0.00 0.04 0.06 delta tf -0.11 -0.01 0.09 delta fmax -5.00 -0.90 3.00 mhz delta icc-h -0.02 0.00 0.02 ma delta icc-l -0.01 0.00 0.02 delta voh 0.00 0.00 0.00 mv delta vol -6.11 -1.59 3.32 delta isink -0.52 0.00 0.36 ma delta isource -0.26 -0.18 -0.13 delta svr -10.39 0.74 11.40 db delta cmrr -0.68 2.79 5.60
docid026299 rev 1 11/32 rhr801 radiations 32 table 9. drift after 30 krad, 36 rad/h low-dose rate, v cc+ = +3.3 v, v cc- = 0 v, t = 25 c, (unless otherwise specified) symbol min typ max unit delta vio -0.36 0.07 0.57 mv delta vtrip+ -0.64 0.11 0.80 delta vtrip- -0.50 0.02 0.33 delta iib -0.23 -0.02 0.23 a delta tplh (150 mv step) -0.20 -0.01 0.20 ns delta tplh (200 mv step) -0.15 -0.01 0.15 delta tphl (150 mv step) -0.10 0.04 0.20 delta tphl (200 mv step) -0.10 0.02 0.15 delta tr -0.04 0.02 0.08 delta tf -0.14 -0.05 0.04 delta fmax -3.00 0.84 4.00 mhz delta icc-h -0.01 0.10 0.42 ma delta icc-l -0.01 0.10 0.43 delta voh -0.01 0.00 0.00 mv delta vol -5.11 -3.25 -1.45 delta isink 0.14 0.23 0.32 ma delta isource -0.03 0.06 0.15 delta svr -9.54 -0.35 6.02 db delta cmrr -7.96 1.13 7.80
radiations rhr801 12/32 docid026299 rev 1 table 10. drift after 30 krad, 36 rad/h low-dose rate, v cc+ = +5 v, v cc- = 0 v, t = 25 c, (unless otherwise specified) symbol min typ max unit delta vio -0.48 0.09 0.49 mv delta vtrip+ -0.76 0.13 0.80 delta vtrip- -0.40 0.06 0.49 delta iib -0.70 -0.23 0.43 a delta tplh (150 mv step) -0.30 -0.04 0.20 ns delta tplh (200 mv step) -0.25 -0.02 0.20 delta tphl (150 mv step) -0.15 0.05 0.35 delta tphl (200 mv step) -0.10 0.02 0.20 delta tr -0.06 0.00 0.04 delta tf -0.08 -0.04 0.00 delta fmax -2.00 0.40 4.00 mhz delta icc-h -0.01 0.44 1.86 ma delta icc-l -0.01 0.44 1.86 delta voh -0.02 0.00 0.01 mv delta vol -5.91 -3.58 -1.17 delta isink 0.06 0.28 0.44 ma delta isource 0.00 0.14 0.31 delta svr -16.26 1.97 9.78 db delta cmrr -8.63 2.43 16.68
docid026299 rev 1 13/32 rhr801 electrical characteristic curves 32 4 electrical characteristic curves figure 1. i cc drift vs. radiation dose, high-dose rate figure 2. i cc drift vs. radiation dose, low-dose rate figure 3. v io histogram at v cc = 3.3 v figure 4. v hyst histogram at v cc = 3.3 v figure 5. v io histogram at v cc = 5 v figure 6. v hyst histogram at v cc = 5 v
electrical characteristic curves rhr801 14/32 docid026299 rev 1 figure 7. v io vs. temperature figure 8. v hyst vs. temperature figure 9. v io vs. v cc figure 10. v hyst vs. v cc figure 11. i ccl vs. v cc figure 12. i cch vs. v cc 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 3.0 3.5 4.0 4.5 5.0 v cc (v) v io (mv) -55 c 25 c 125 c 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 3.0 3.5 4.0 4.5 5.0 v cc (v) -55 c 25 c 125 c v hyst (mv) 3.0 2.5 2.0 1.5 1.0 0.5 3.0 3.5 4.0 4.5 5.0 v cc (v) i ccl (ma) -55 c 25 c 125 c v id = -0.1 v no load 3.0 2.5 2.0 1.5 1.0 0.5 3.0 3.5 4.0 4.5 5.0 v cc (v) i cch (ma) -55 c 25 c 125 c v id = 0.1 v no load
docid026299 rev 1 15/32 rhr801 electrical characteristic curves 32 figure 13. i cc vs. temperature figure 14. i ib vs. v id figure 15. i ib vs. temperature figure 16. i out vs. temperature figure 17. v out vs. i sink at v cc = 3.3 v figure 18. v drop vs. i source at v cc = 3.3 v
electrical characteristic curves rhr801 16/32 docid026299 rev 1 figure 19. v out vs. i sink at v cc = 5 v figure 20. v drop vs. i source at v cc = 5 v figure 21. t pd vs. v ov at v cc = 3.3v figure 22. t pd vs. v ov at v cc = 5v figure 23. t plh vs. v cc figure 24. t phl vs. v cc v cc (v) t plh (ns) t = -55 c t = 25 c t = 125 c 14 13 12 11 10 9 3.0 3.5 4.0 4.5 5.0 8 7 6 v ov = 100 mv v icm = v cc /2 c load = 10 pf v cc (v) t phl (ns) t = -55 c t = 25 c t = 125 c 14 13 12 11 10 9 3.0 3.5 4.0 4.5 5.0 8 7 6 v ov = 100 mv v icm = v cc /2 c load = 10 pf
docid026299 rev 1 17/32 rhr801 electrical characteristic curves 32 figure 25. t pd vs. temperature, v ov = 50 mv figure 26. t pd vs. temperature, v ov = 100 mv figure 27. tplh vs. c l at v cc = 3.3 v figure 28. tphl vs. c l at v cc = 5 v figure 29. rise time vs. c l figure 30. fall time vs. c l
electrical characteristic curves rhr801 18/32 docid026299 rev 1 figure 31. eye diagram for data rate 100 mbit/s, test pattern prbs7, c l = 10 pf and v cc = 3.3 v figure 32. eye diagram fo r data rate 100 mbit/s, test pattern prbs7, c l = 10 pf and v cc = 5 v figure 33. eye diagram for data rate 200 mbit/s, test pattern prbs7, c l = 10 pf and v cc = 3.3 v figure 34. eye diagram fo r data rate 200 mbit/s, test pattern prbs10, c l = 10 pf and v cc = 3.3 v ddj = 884ps dcd = 502ps dj = 841ps tj = 1194ps 1.67ns/div ddj = 1188ps dcd = 394ps dj = 1164ps tj = 1187ps 1.67ns/div ddj = 993ps dcd = 478ps dj = 961ps tj = 1314ps 840ps/div ddj = 959ps dcd= 427ps dj = 910ps tj = 1278ps 840ps/div
docid026299 rev 1 19/32 rhr801 parameters and implementation 32 5 parameters and implementation 5.1 static input features figure 35. input threshold 5.2 dynamic characteristics figure 36. output rise and fall times output signal v-reference input signal vtrip- vtrip+ 2 time time vio = (vtrip+) + (vtrip-) am06124 tr tf 80% 20% rise time fall time output signal time am06125
parameters and implementation rhr801 20/32 docid026299 rev 1 figure 37. input step and overdrive figure 38. propagation time 5.3 characteristics of the output stage the rhr801 uses a rail-to-rail mos output. the output levels are guaranteed through testing (see the output characteristics in table 4 and table 5 ). this stage is optimized for driving a load of 1 k , with no stability issues. the capaciti ve load affects both the rise and fall times. v- reference overdrive time step am06126 tplh 50% propagation time output signal input signal vih time time vil tphl propagation time am06127
docid026299 rev 1 21/32 rhr801 parameters and implementation 32 5.4 impedance matching for dynamic measurements to correctly evaluate this high-speed comparator, both the input and output must be properly matched (50 ) . this matching is mandatory to avoid reflections on the tracks and cables, particularly at such high-speed rise and fall times. the matching of the input is relatively easy to perform with a 50 input resistance placed as close as possible to the comparator input. the input track is 50 matched. for the output, the comparator cannot drive a 50 line directly; to reduce the output current while keeping a good 50 termination on both sides of the cable, it is mandatory to use a series resistor much greater than 50 , for example, 1 k as in figure 39 . figure 39. output impedance matching 5.5 implementation on the board the rhr801 is a very high-speed product that features very sharp output rise and fall times. the very high current variations mu st be appropriately managed and proper board layout techniques should be used to ensure best performances. it is important to minimize the resistance from the source to the input of the comparator. high resistance values combined with the equiva lent input capacitance can result in time constants below the capability of the comparator. this is the ca use of a lagged response at the input, resulting in an output delay. moreover, proper ground impedance and other layout techniques must be implemented to minimize the input stray capacitance, such as very short tracks on any high-impedance termination. with high-speed applications, it is very import ant to provide bypass capacitors for the power supply. good power supply decoupling is mandatory (pin 4 and pin 7), as well as good decoupling on the reference (pin 2). with dual supplies, a 10 f bypass capacitor should be placed on each power supply pin. this capacitor reduces any potential voltage ripple from the power supply at lower frequencies. a 10 nf ceramic capacitor should be placed as close as possible to the power supply pins and be tracked to ground. this capacitor reduces higher frequency noise during high-frequency switching. 50 capa-load vin fin + _ rhr801 50 1 k to reduce output current vcc = +3 v/+5 v very short track 50 track 50 50 termination v-reference am06128 10 f 10 f 10 nf
parameters and implementation rhr801 22/32 docid026299 rev 1 a proper ground plane is particularly recommended for high-speed performance. it can be created by implementing a continuous conductive plane all over the surface of the circuit board, with breaks for the necessary paths only. a proper ground plane minimizes the effects of stray capacitance on the circuit boar d and facilitates the layout of matched tracks. this ground plane also provides a low in ductive ground, eliminating any potential differences at various ground points. figure 40. single supply layout figure 41. dual supply layout v-reference vin fin low impedance source very short track vcc+ = +3 to +5 v very short track 10 nf 10 f rl + _ cl vcc- = 0 v ground floor 10 nf equivalent load 100 f low frequency bypass high frequency bypass C as close as possible to the ic am06129 v-reference = 0 v ground floor vin fin low impedance source very short track vcc+ = +1.5 to +2.5 v very short track 10 nf 10 f rl + _ cl equivalent load 10 f am06130 10 nf vcc+ = -1.5 to -2.5 v
docid026299 rev 1 23/32 rhr801 parameters and implementation 32 figure 42. input impedance matching time constant = r x csi should be as low as possible and << tr, tf, tplh, and tphl. figure 43. 50 matching time constant = 50 x csi should be as low as possible and << tr, tf, tplh, and tphl. vin fin low impedance source (r) very short track: minimization of stray input capacitance (csi) + _ am06131 very short track: minimization of stray input capacitance (csi) + _ am06132 50 50 track
parameters and implementation rhr801 24/32 docid026299 rev 1 5.6 application examples 5.6.1 inverting comparator with hysteresis the rhr801 comparator has a typ. 2.5 mv implemented input voltage hysteresis which improves device stability and ensures a clea n output response w hen the inpu t signal amplude is relative small or moving slowly. however, in certain situations, like in noisy environments, it is desirable to increase the hysteresis value. it can easily be done by an external positive feedback network connected to the device. figure 44. external hysteresis circuit figure 44 shows the circuit with positive feedba ck between the output and non-inverting input. threshold voltages are given by the r1, r2, and r3 ratio and the v cc power supply voltage. neglecting input bias current and output voltage drop, v th+ , and v th- can be calculated using equation 1 equation 1 the symbol ?|? represents a resistors parallel combination. the threshold voltages of figure 44 are set to v th+ = 1.1 v and v th- = 1.3 v. 287 ,1 5 5 q 5 n n 9 2/ 9 2+ 9 ,1 9 287 9 7+ 9 7+ 5+5 9wr9 v th v cc r 2 r 2 r 1 r 3 + ----------------------------- - ? = v th v cc r 2 r 3 r 1 r 2 r 3 + ----------------------------- - ? =
docid026299 rev 1 25/32 rhr801 parameters and implementation 32 5.6.2 fast signal recovery the circuit in figure 45 represents an example of a simple translator input signal from a 50 transmission line to a cmos compatible output. figure 45. signal recovery circuit the reference voltage is set by the resistors r 2 and r 3 to 1.65 v. capacitors (c) in parallel with r 1 ensure stable low impedance of the reference input during a transition period. a 100-nf capacitor, with low esr, must be placed close to the device pin. c 1 removes the dc component from the input signal while r 1 terminates the 50 input and avoids signal reflection. the minimum operati ng frequency is given by c 1 and it is about 100 khz. 9 5 x n 5 5 ,1 7 287 q n q x q & 7 wudfn 5+5 9wr9
parameters and implementation rhr801 26/32 docid026299 rev 1 5.6.3 10 mhz rc oscillator the circuit in figure 46 provides a square signal with a frequency of about 10 mhz. this circuit utilizes both positive and negative f eedback. positive feedback produces the r 2 , r 3 , and r 4 resistor network which implements input voltage hysteresis described in section 5.6.1: inverting comparator with hysteresis . because r 2 = r 3 = r 4 , the threshold voltages are 1/3 of the v cc and 2/3 of the v cc . consequently, output duty cycle is 50 % and output frequency is independent of v cc . figure 46. rc oscillator the r1 feedback resistor periodically charges and discharges the c 1 capacitor. the output signal period can be calculated using equation 2 . note that this equatio n is valid only when r 2 = r 3 = r 4 . equation 2 in a real application, output frequency is slig htly lower than calculated due to pcb parasitic capacitances. 9wr9 s n n n n 5 5 5 5 & q 5+5 t4 () ln ? 1.39 r 1 c 1 ? ? ==
docid026299 rev 1 27/32 rhr801 package information 32 6 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark.
package information rhr801 28/32 docid026299 rev 1 6.1 ceramic flat-8 pa ckage information figure 47. ceramic flat-8 package outline table 11. ceramic flat-8 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.24 2.44 2.64 0.088 0.096 0.104 b 0.38 0.43 0.48 0.015 0.017 0.019 c 0.10 0.13 0.16 0.004 0.005 0.006 d 6.35 6.48 6.61 0.250 0.255 0.260 e 6.35 6.48 6.61 0.250 0.255 0.260 e2 4.32 4.45 4.58 0.170 0.175 0.180 e3 0.88 1.01 1.14 0.035 0.040 0.045 e 1.27 0.050 l 6.7 7.5 0.275 0.291 q 0.66 0.79 0.92 0.026 0.031 0.092 s1 0.92 1.12 1.32 0.036 0.044 0.052 n08 08
docid026299 rev 1 29/32 rhr801 ordering information 32 7 ordering information note: contact your st sales office for information regarding the specific conditions for products in die form and qml-q versions. table 12. order codes order code description temp. range package marking (1) packing RHR801K1 engineering model -55 c to 125 c flat-8 RHR801K1 strip pack rhr801k-01v qml-v flight 5962r1021501 vxc 1. specific marking only. comple te marking includes the following: - smd pin (on qml-v flight only) - st logo - date code (date the package was sealed) in yywwa (year, week, and lot index of week) - qml logo (q or v) - country of origin (fr = france)
other information rhr801 30/32 docid026299 rev 1 8 other information 8.1 date code the date code is structured as shown below: ? engineering model: em xyywwz ? qml flight model: fm yywwz where: x (em only): 3, assembly location rennes (france) yy: last two digits year ww: week digits z: lot index in the week 8.2 documentation table 13. documentation provided for qml-v flight quality level documentation engineering model ? qml-v flight ? certificate of conformance with group c (reliability test) and group d (package qualification) reference ? precap report ?pind (1) test summary (test method conformance certificate) ? sem (2) report ? x-ray report ? screening summary ? failed component list (list of components that have failed during screening) ? group a summary (qci (3) electrical test) ? group b summary (qci (3) mechanical test) ? group e (qci (3) wafer lot radiation test) 1. pind = particle impact noise detection 2. sem = scanning electron microscope 3. qci = quality conformance inspection
docid026299 rev 1 31/32 rhr801 revision history 32 9 revision history table 14. document revision history date revision changes 10-jun-2014 1 initial release
rhr801 32/32 docid026299 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems wi th product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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