super high-power gaalas ir emitters OD-50W features ultra high po wer output four wire bo nds on die corners very uniform optical beam standard 3-lead to-39 hermetic package chip size .030 x .030 inches all surfaces are gold plated. dimensions are nominal values in inches unless otherwise specified. two cathode pins must be externally connected together. radiant intensity, i e peak emission wavelength, p spectral bandwidth at 50%, ? half intensity beam angle, forward voltage, v f reverse breakdown voltage, v r capacitance, c rise time fall time power dissipation 1 continuous forward current peak forward current (10 s, 400hz) 2 reverse voltage lead soldering temperature (1/16" from case for 10sec) i f = 500ma i f = 50ma i f = 500ma i r = 10 a v r = 0v 60 880 80 110 1.65 30 90 0.7 0.7 2 mw/sr nm nm deg volts volts pf sec sec 1000mw 500ma 10a 5v 260c electro-optical characteristics at 25c parameters test conditions min typ max units absolute maximum ratings at 25c case total power output, p o i f = 500ma i f = 10a mw 60 5 75 1000 1 derate per thermal derating curve above 25c 2 derate linearly above 25c .200 anode (case) cathode . 040 . 031 45 .357 .362 .100 .157 .169 .018 .246 .254 glass .012 high max .025 .500 .324 .332 storage and operating temperature range maximum junction temperature thermal resistance, r thja 1 thermal resistance, r thja 2 -55c to 100c 100c 145c/w typical 75c/w typical thermal parameters 1 heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 air circulating at a rapid rate to keep case temperature at 25c rohs revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com end of life december 2013 http://
super high-power gaalas ir emitters OD-50W radiation pattern power output vs temperature power output vs forward current relative power output (%) beam angle, (deg) ? 100 100 relative power output ambient temperature (c) ?50 1.5 power output, p o (mw) forward current, i f (ma) 10 1,000 80 60 40 20 0 ? 80 ? 60 ? 40 ? 20 0 20 40 60 80 100 100 10 1 100 1,000 10,000 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ?25 0 25 50 75 100 thermal derating curve duty cycle, d (%) 0.01 0.1 1 maximum peak pulse current 10 100 peak forward current, i p (amps) 1 0.1 100 10 ambient temperature (c) 25 50 75 100 power dissipation (mw) 1,000 500 400 300 200 100 0 1,100 900 800 700 600 t t i p d = t t no heat sink infinite heat sink 1 dc pulse 10 s, 100hz t = 10 s t = 50 s t = 100 s degradation curve forward i-v characteristics spectral output relative power output (%) stress time, (hrs) 10 1 100 forward current, i f (amps) forward voltage, v f (volts) 0 12 relative power output (%) wavelength, (nm) 750 100 90 80 70 60 50 10 2 10 3 10 4 10 5 10 8 6 4 2 0 2 4 6 8 10 800 850 900 950 1,000 80 60 40 20 0 i f = 450ma t case = 25c no pre burn-in performed i f = 250ma i f = 150ma maximum ra tings typical characteristics revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com end of life december 2013
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