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d u a l e n h a n c e m e n t m o d e m o s f e t ( n - a nd p - c h a n n e l) c o p y r i g h t ? a n p e c e l e c t r o n i cs c o r p . r e v . a . 1 - m a y , 2 0 0 7 ww w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e li a b i li t y o r m a nu f a c t u r a b ili t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 5 5 0 j f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a - t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . n - c h a n n e l p - c h a n n e l n - c h a n n e l 30 v / 8 a , r d s ( o n ) = 20 m w ( t y p . ) @ v g s = 10 v r d s ( o n ) = 30 m w ( t y p . ) @ v g s = 4 . 5 v p - c h a n n e l - 30 v / - 7 a , r d s ( o n ) = 40 m w ( t y p . ) @ v g s = - 10 v r d s ( o n ) = 62 m w ( t y p . ) @ v g s = - 4 . 5 v s up e r h i gh d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a na g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s t o p v i e w o f d i p - 8 g1 s1 d1 d1 d2 g2 s2 d2 apm4550 handling code temp. range package code package code j : dip-8 operating junction temp. range c : -55 to 150 c handling code tu : tube lead free code l : lead free device APM4550J : apm4550 xxxxx xxxxx - date code lead free code http://
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 2 a p m 4 5 5 0 j a b s o l u t e m a x i m u m r a t i n g s ( t a = 25 c un l e ss o t he r w i s e no t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 25 c u n l e ss o t he r w i s e no t ed ) symbol parameter n channel p channel unit v dss drain - source voltage 30 - 30 v gss gate - source voltage 20 20 v i d * continuous drain current 8 - 7 i dm * 300 m s pulsed drain current v gs = 10 v 30 - 30 a i s * diode continuous forward current 2.5 - 2 a t j maxi mum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 2.5 p d * power dissipation t a =100 c 1 w r q ja * thermal resistance - junction to ambient 50 c / w note: *surface mounted on 1in 2 pad area, t 10sec. apm 4550j symbol parameter test condition min. typ. max. unit static characteristics v gs =0v, i ds =250 m a n - ch 30 bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a p - ch - 30 v v ds = 24 v, v gs =0v 1 t j =85 c n - ch 30 v ds = - 24 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c p - ch - 30 m a v ds =v gs , i ds =250 m a n - ch 1 1.5 2 v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a p - ch - 1 - 1.5 - 2 v n - ch 100 i gss gate leakage current v gs = 20 v, v ds =0v p - ch 100 na v gs = 10 v, i ds = 8 a n - ch 20 27.5 v gs = - 10 v, i ds = - 7 a p - ch 40 50 v gs = 4 .5v, i ds = 5 a n - ch 30 40 r ds(on) a drain - source on - s tate resistance v gs = - 4. 5v, i ds = - 4 a p - ch 62 80 m w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 3 a p m 4 5 5 0 j n o t e s : a : p u l s e t e s t ; pu l s e w i d t h 30 0 m s , du t y c y c l e 2 %. b : g u a r a n t ee d b y de s i g n , n o t s ub j e c t t o p r o du c t i on t e s t i n g . e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c un l e ss o t he r w i s e no t e d ) apm 4550j symbol parameter test condition min. typ. max. unit diode characteristics i sd = 2.5 a, v gs =0v n - ch 0.8 1.3 v sd a diode forward voltage i sd = - 2 a, v gs =0v p - ch - 0.8 - 1.3 v n - ch 16 t rr reverse recovery time p - ch 15 ns n - ch 9 q rr reverse recovery charge n - channel i sd = 8 a, dl sd /dt=100a/ m s n - channe l i sd = - 7 a, dl sd /dt=100a/ m s p - ch 6 nc dynamic characteristics b n - ch 2 r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz p - ch 8.3 w n - ch 620 c iss input capacitance p - ch 600 n - ch 90 c oss output capacitance p - ch 100 n - ch 70 c rss reverse transfer capacitance n - channel v gs =0v, v ds =15v, f requency =1.0mhz p - channel v gs =0v, v ds = - 15v, f requency =1.0mhz p - ch 75 pf n - ch 6 11 t d(on) turn - on delay time p - ch 8 14 n - ch 10 18 t r turn - on rise time p - ch 12 22 n - ch 22 40 t d(off) turn - off delay time p - ch 27 50 n - ch 3 6 t f turn - off fall time n - channel v dd = 15 v, r l = 15 w , i d s = 1 a, v gen = 10v , r g = 6 w p - channel v dd = - 15 v, r l = 15 w , i d s = - 1 a, v gen = - 10v , r g = 6 w p - ch 14 25 ns gate charge characteristics b n - ch 14 19 q g total gate charge p - ch 12 16 n - ch 1.3 q gs gate - source charge p - ch 1.1 n - ch 3.2 q gd gate - drain c harge n - channel v ds = 15 v, v gs = 10 v, i d s = 8 a p - channel v ds = - 15 v, v gs = - 10 v, i d s = - 7 a p - ch 2.8 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 4 a p m 4 5 5 0 j t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s ou r c e v o l t ag e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q ua r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i ss i p a t i on p tot - power ( w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) n - c h a n n e l normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 t a =25 o c,v g =10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 300 m s rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 5 a p m 4 5 5 0 j r ds(on) - on - resistance ( m w ) d r a i n - s ou r ce o n r es i s t a n ce i d - d r a i n c u r r e n t ( a ) t j - j un c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t ag e ( v ) i d - drain current (a) o u t pu t c h a r ac t e r i s t i cs v g s - g a t e - s ou r c e v o l t a ge ( v ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) d r a i n - s ou r ce o n r es i s t a n ce r ds(on) - on - resistance (m w ) n - c h a n n e l 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18 21 24 27 30 4v 3v 2.5v 3.5v v gs = 4.5,5,6,7,8,9,10v 0 5 10 15 20 25 30 5 10 15 20 25 30 35 40 45 50 v gs =10v v gs =4.5v 2 3 4 5 6 7 8 9 10 10 15 20 25 30 35 40 45 50 i d =8a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 ma
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 6 a p m 4 5 5 0 j v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s ou r ce o n r es i s t a n ce normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s ou r c e - d r a i n v o l t age ( v ) s ou r c e - d r a i n d i od e fo r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c ha r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) n - c h a n n e l -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 v gs = 10v i ds = 8a r on @t j =25 o c: 20m w 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 30 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 900 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 v ds =15v i ds =8a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 7 a p m 4 5 5 0 j t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) p o w e r d i ss i p a t i on p tot - power ( w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t ag e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q ua r e w a v e p u l s e d u r a t i o n ( s e c ) -i d - drain current (a) p - c h a nn e l normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 t a =25 o c,v g =-10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 300 m s rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 8 a p m 4 5 5 0 j t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) r ds(on) - on - resistance ( m w ) d r a i n - s ou r ce o n r es i s t a n ce - i d - d r a i n c u r r e n t ( a ) - v d s - d r a i n - s ou r c e v o l t a ge ( v ) -i d - drain current (a) o u t pu t c h a r ac t e r i s t i cs t j - j un c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v g s - g a t e - s ou r c e v o l t ag e ( v ) normalized threshold voltage r ds(on) - on - resistance (m w ) d r a i n - s ou r ce o n r es i s t a n ce p - c h a nn e l 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18 21 24 27 30 -5v -4.5v -3.5v -2.5v -4v -3v v gs =-6,-7 -8,-9,-10v 0 5 10 15 20 25 30 10 20 30 40 50 60 70 80 90 100 v gs =-10v v gs =-4.5v 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100 i d =-7a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 ma
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 9 a p m 4 5 5 0 j t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) d r a i n - s ou r ce o n r es i s t a n ce normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) - v s d - s ou r c e - d r a i n v o l t age ( v ) s ou r c e - d r a i n d i od e fo r w a r d -i s - source current (a) - v d s - d r a i n - s o u r c e v o l t ag e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c ha r g e ( n c ) -v gs - gate - source voltage (v) p - c h a nn e l 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 v ds = -15v i ds = -7a -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = -10v i ds = -7a r on @t j =25 o c: 40m w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 1 0 a p m 4 5 5 0 j p a c k a g e i n f o r m a t i o n d i p - 8 e 1 d a 2 a 1 a l d1 ea eb e e 0 . 38 c b b2 s y m b o l min. max. 5.33 0.38 0.36 0.56 1.14 1.78 0.20 0.35 9.01 10.16 0.13 2.92 3.81 a a1 b b2 c d d1 e e1 e ea millimeters a2 2.92 4.95 2.54 bsc dip-8 7.62 8.26 6.10 7.11 eb l 10.92 7.62 bsc min. max. inches 0.210 0.015 0.100 bsc 0.300 bsc 0.115 0.195 0.014 0.022 0.045 0.070 0.008 0.014 0.355 0.400 0.005 0.300 0.325 0.240 0.280 0.430 0.115 0.150
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 1 1 a p m 4 5 5 0 j terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsm in t l t p 25 temperature ti me critical zone t l to t p r e f l o w c o n d i t i o n ( i r / c o n v ec t i on o r vp r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s p h y s i c a l s p e c i f i c a t i o n s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package. measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 1 2 a p m 4 5 5 0 j c u s t o m e r s e r v i c e a np e c e l e c t r on i c s c o r p . head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 t a i pe i b r a n c h : 7 f , n o . 13 7 , la ne 23 5 , p ao c h i a o r d ., h s i n t i e n c i t y , t a i p e i h s i en , t a i w a n , r . o . c . t e l : 88 6 - 2 - 8 9 19 1 36 8 f a x : 886 - 2 - 89 19 13 69 test item method description solderability mil - std - 883d - 2003 245 c, 5 sec ho lt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b,a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 10 11.9 - 65 c~150 c, 200 cycles esd mil - std - 883d - 3015.7 vhbm > 2k v , vmm > 200v latch - up jesd 78 10ms, 1 tr > 100ma r e l i a b i l i t y t e s t p r o g r a m table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* * tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . )

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