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esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 1/12 1.2w fully differential audio power amplifier with shutdown select general description the EMA1003 is a fully differential audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. it is capable of delivering 1.2 watt of continuous average power to an 8 btl load with less than 1% distortion (thd+n) from a 5vdc power supply . the EMA1003 does not require output coupling capacitors or bootstrap capacitors, and therefore is ideally suited for mobile phone and other low voltage applications where minimal power consumption is a primary requirement. the EMA1003 features a low-power consumption shutdown mode. to facilitat e this, shutdown may be enabled by either logic high or low depending on mode selection. driving the shutdown mode pin either high or low enables the shutdown select pin to be driven in a likewise mann er to enable shutdown. additionally, the EMA1003 features an internal thermal shutdown protecti on mechanism. the EMA1003 contains advanced pop & click circuitry which eliminates noises which would otherwise occur during turn-on and turn-off transitions. the EMA1003 is unity-gain stable and can be configured by external gain-setting resistors. key specifications improved psrr at 217hz 70db(typ) power output at 5.0v, 8 & 1% thd 1.2w(typ) power output at 2.6v,8 & 1% thd 300mw(typ) shutdown current 0.1a (typ) features fully differential amplification available packages msop ultra low current shutdown mode can drive capacitive loads up to 500 pf improved pop & click circuitry eliminates noises during turn-on and turn-off transitions 2.2 - 5.5v operation no output coupling capacitors, snubber networks or bootstrap capacitors required unity-gain stable external gain configuration capability shutdown high or low selectivity high cmrr applications mobile phones pdas portable electronic devices connection diagram order information EMA1003-50ma10grr/nrr 50 5.0v operation ma10 msop-10 package grr rohs(pb free) rating: -40 to 85c package in tape & reel msop-10 package nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel 1 sdslct 2 3 4 5 inn sdmode inp bypass outn gnd nc v dd outp 10 9 8 7 6
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 2/12 msop-10fd (exposed pad)package EMA1003-50me10grr 50 5.0v operation me10 msop-10fd (exposed pad)package grr rohs(pb free) commercial grade temperature rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) order, mark & packing information package marking product id packing msop-10 EMA1003-50ma10grr 3k units tape & reel msop-10fd (exposed pad) by request 3k units tape & reel
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 3/12 typical application figure 1. typical audio amplifier application circuit bias bypass inp 1.0 f r i 2 20k ? r f 2 20k ? r i 1 20k ? sdslct sdmode c b common mode v dd c1 1 f outp outn rl 8 ? r f 1 20k ? gnd differential input differential input shutdown control sdmode sdslct status shutdown on on shutdown 0 0 1 1 0 1 0 1 10 6 1 3 5 4 inn 2 9 7
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 4/12 absolute maximum ratings supply voltage 6.0v storage temperature -65c to +150c input voltage -0.3v to vdd +0.3v power dissipation internally limited esd susceptibility hbm 2kv mm 200v junction temperature 150c thermal resistance ja (msop) 190c/w operating ratings temperature range -40c Q ta Q 85c supply voltage 2.2v Q vdd Q 5.5v electrical characteristics v dd = 5v the following specifications apply for v dd = 5v ,a v = 1 and r l = 8 unless otherwise specified. limits apply for t a = 25c. conditions symbol parameter conditions typical limit units (limits) i dd quiescent power supply current v in = 0v, io = 0a 1.5 3 ma (max) i sd shutdown current v sdnb =gnd 0.1 1 a (max) p o output power thd = 1 %(max), f = 1khz r l = 4 ? r l = 8 ? 1.7 1.2 1.5 1 w (min) p o = 0.8 wrms ; f = 1khz, 4 0.008 thd+n total harmonic distortion + noise p o = 0.4 wrms ; f = 1khz, 8 0.008 % v ripple = 200mv sine p-p f = 217hz (un-terminated input) 70 f = 1khz (un-terminated input) 70 f = 217hz ( 10 ? terminated input) 70 psrr power supply rejection ratio f = 1khz (10 ? terminated input) 70 db cmrr common mode rejection ratio f = 217hz 57 db electrical characteristics v dd = 2.6v the following specifications apply for v dd = 2.6v ,a v = 1 and r l = 8 unless otherwise specified. limits apply for t a = 25c. conditions symbol parameter conditions typical limit units (limits) i dd quiescent power supply current v in = 0v, io = 0a 1.3 2 ma (max) i sd shutdown current v sdnb =gnd 0.1 1 a (max) p o output power thd = 1 %(max), f = 1khz r l = 4 ? r l = 8 ? 0.45 0.3 0.4 0.28 w (min) p o = 0.35 wrms ; f = 1khz, 4 0.015 thd+n total harmonic distortion + noise p o = 0.25 wrms ; f = 1khz, 8 0.01 % v ripple = 200mv sine p-p f = 217hz ( un-terminated input) 70 f = 1khz ( un-terminated input) 70 f = 217hz ( 10 ? terminated input) 60 psrr power supply rejection ratio f = 1khz (10 ? terminated input) 60 db cmrr common mode rejection ratio f = 217hz 55 db
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 5/12 typical performance characteristics thd + noise vs frequency @ v dd = 2.6v, r l = 4 , po = 150mw thd + noise vs frequency @ v dd = 5v, r l = 4 , po = 1w thd + noise vs frequency @ v dd = 2.6v, r l = 8 , po = 150mw thd + noise vs frequency @ v dd = 5v, r l =8 , po = 400mw
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 6/12 thd + noise vs output power @ v dd =2.6v, r l = 4 , bw=60khz, a v = 1 thd + noise vs output power @ v dd =5v, r l = 4 , bw=60khz, a v = 1 thd + noise vs output power @ v dd =2.6v, r l = 8 , bw=60khz, a v = 1 thd + noise vs output power @ v dd =5v, r l = 8 , bw=60khz, a v = 1
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 7/12 psrr vs frequency @ v dd =3v, r l = 8 psrr vs frequency @ v dd =2.6v, r l = 8 cmrr vs frequency @ v dd =3v cmrr vs frequency @ v dd =5v
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 8/12 3.6v power supply with square wave, 500mvp-p, f=217hz, duty=20%
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 9/12 physical dimensions msop-10 o symbpls min. nom. max. a 1.10 a1 0.00 0.15 a2 0.75 0.85 0.95 b 0.17 0.27 c 0.08 0.23 d 3.00 bsc e 4.90 bsc e1 3.00 bsc e 0.50 bsc l 0.40 0.60 0.80 l1 0.95 bsc 0.00 8.00 unit: mm
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 10/12 msop-10fd (exposed pad) o symbpls min. nom. max. a 1.10 a1 0.00 0.15 a2 0.75 0.85 0.95 b 0.17 0.27 c 0.08 0.23 d 3.00 bsc e 4.90 bsc e1 3.00 bsc e 0.50 bsc l 0.40 0.60 0.80 l1 0.95 bsc 0.00 8.00 pad size e2 d1 75x70e 1715 ref 1.600 ref unit: mm
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 11/12 revision history revision date description 2.0 2009.05.05 emp transferred from version 1.1
esmt/emp EMA1003 elite semiconductor memory technology inc./ elite micropower inc. publication date : may. 2009 revision : .2.0 12/12 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without th e prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt assu mes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of esmt or others. any semiconductor devices may have inherently a certain rate of failure. to minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if prod ucts described here are to be used for such kinds of application, pu rchaser must do its own quality assurance testing appropriate to such applications.

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