dmg301nu document number: ds36226 rev. 3 - 2 1 of 6 www.diodes.com september 2014 ? diodes incorporated dmg301nu 25v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 25v 4 @ v gs = 4.5v 0.26 a 5 @ v gs = 2.7v 0.23 a description this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power m anagement f unctions ? battery operated systems and solid - state relays ? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc . features ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? small surface mount package ? esd protected gate ( >6kv human body model) ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 2 3 ? case material: molded plastic. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: solderable per mil - std - 202, method 208 ? lead free plating (matte tin finish a nnealed over alloy 42 l eadframe). ? terminal connections: see diagram ? weight: 0. 00 8 grams ( a pproximate) ordering information (note 4) part number compliance case packaging dmg301nu - 7 standard sot23 3,000/tape & reel dmg301nu - 13 standard sot23 10,000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging d etails, go to our website at http : // www.diodes.com/products/packages.html . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view top view pin configuration equivalent circuit esd hbm >6kv n5k = product type marking code ym = date code marking for sat (shanghai assembly/ test s ite) ym = date code marking for c at ( chengdu assembly/ test s ite) y or y = year (ex: a = 201 3 ) m = month (ex: 9 = september) e3 d g s d s g g ate protection diode
dmg301nu document number: ds36226 rev. 3 - 2 2 of 6 www.diodes.com september 2014 ? diodes incorporated dmg301nu maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 25 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 0.26 0.21 a continuous drain current (note 6 ) v gs = 2.7 v steady state t a = + 25c t a = + 70c i d 0.23 0.18 a pulsed drain curren t ( 10s pulse, duty cycle = 1% dm 1.5 a maximum body diode continuous current (note 6 ) i s 0. 5 a thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 0.32 w (note 6 ) 0.4 thermal resistance, junction to ambient (note 5 ) r ja 369 c/w (note 6 ) 296 thermal resistance, junction to case (note 6 ) r j c 1 15 operating and storage temperature range t j, t stg - 55 to +1 50 c electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 25 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ds = 2 0v, v gs = 0v gate - body leakage i gss ? ? gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.7 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? ? gs = 4.5v , i d = 0.4 a ? ? ? ? ? gs = 2.7 v, i d = 0.2 a forward transconductance g fs ? ? ds = 5 v, i d = 0.4 a diode forward voltage v sd ? ? ? gs = 0v, i s = 0.29 a dynamic characteristics (note 8 ) input capacitance c iss ? ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? rss ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? ? gs = 4.5 v, v ds = 5 v, i d = 0.2 a gate - source charge q gs ? ? gd ? ? d(on) ? ? g s = 4.5 v , v ds = 6 v i d = 0.5 a , r g = 50 r ? ? d(off) ? ? ? ? f ? ? ? ? notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing.
dmg301nu document number: ds36226 rev. 3 - 2 3 of 6 www.diodes.com september 2014 ? diodes incorporated dmg301nu v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 v = 1.5v gs v = 2.7v gs v = 3.0v gs v = 4.0v gs v = 8.0v gs v = 4.5v gs v = 1.2v gs v = 2.0v gs v = 2.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 2.5 3 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.3 0.6 0.9 1.2 1.5 0 0.2 0.4 0.6 0.8 1 v = 2.7v gs v = 4.5v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 500ma gs d t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.3 0.6 0.9 1.2 1.5 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 500ma gs d
dmg301nu document number: ds36226 rev. 3 - 2 4 of 6 www.diodes.com september 2014 ? diodes incorporated dmg301nu t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a q (nc) g , total gate charge figure 9 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v = 15v i = a ds d 200m v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 1 10 100 0 5 10 15 20 25 c iss f = 1mhz c rss c oss 0.001 0.01 0.1 1 0.1 1 10 100 v , drain-source voltage (v) figure 11 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = 4.5v single pulse gs dut on 1 * mrp board
dmg301nu document number: ds36226 rev. 3 - 2 5 of 6 www.diodes.com september 2014 ? diodes incorporated dmg301nu package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a ? all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) figure 12 transient thermal resistance d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 373c/w duty cycle, d = t1/ t2 ?? ? ja ja ja x e y c z j k1 k l1 h l m all 7 a c b d a
dmg301nu document number: ds36226 rev. 3 - 2 6 of 6 www.diodes.com september 2014 ? diodes incorporated dmg301nu important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, internatio nal or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support di odes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devi ces or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect i ts safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulator y and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com
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