20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax; (973) 376-8960 npn medium power transistors BSX45; bsx46; bsx47 features ? high current (max. 1 a) ? low voltage (max. 80 v). applications ? general industrial applications. description npn medium power transistor in a to-39 metal package. pinning pin 1 2 3 description emitter base collector, connected to case fig.1 simplified outline (to-39) and symbol. quick reference data symbol vcbo vceo icm plot hfe fi parameter collector-base voltage BSX45 bsx46 bsx47 collector-emitter voltage BSX45 bsx46 bsx47 peak collector current total power dissipation dc current gain BSX45-10; bsx46-10; bsx47-10 BSX45-16; bsx46-16; bsx47-16 transition frequency conditions open emitter open base tcase < 25 c lc = 1 00 ma; vce = 1 v lc = 50 ma; vce = 10 v; f = 100 mhz min. _ - - - - - - - 63 100 50 typ. - - - - - - - - 100 160 - max. 80 100 120 40 60 80 1.5 6.25 160 250 - unit v v v v v v a w mhz nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn medium power transistors BSX45; bsx46; bsx47 limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo ic icm ibm plot tstg tj tamb parameter collector-base voltage BSX45 bsx46 bsx47 collector-emitter voltage BSX45 bsx46 bsx47 emitter-base voltage collector current (dc) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature conditions open emitter open base open collector tcase < 25 c min. - - - - - - - - - - - -65 - -65 max. 80 100 120 40 60 80 7 1 1.5 200 6.25 +150 200 +150 unit v v v v v v v a a ma w c c c thermal characteristics symbol rth j-a r-th j-c parameter thermal resistance from junction to ambient thermal resistance from junction to case conditions in free air value 200 28 unit k/w k/w
npn medium power transistors BSX45; bsx46; bsx47 characteristics tamb = 25 c unless otherwise specified. symbol icbo icbq iebo hpe hpe hpe hpe vcesat vcesat vbe cc ce fr f parameter collector cut-off current BSX45; bsx46 collector cut-off current bsx47 emitter cut-off current dc current gain BSX45-10; bsx46-10; bsx47-10 BSX45-16; bsx46-16 dc current gain BSX45-10; bsx46-10; bsx47-10 BSX45-16; bsx46-16; bsx47-16 dc current gain BSX45-10; bsx46-10; bsx47-10 BSX45-16;bsx46-16 dc current gain BSX45-10; bsx46-10; bsx47-10 BSX45-16;bsx46-16 collector-emitter saturation voltage BSX45; bsx46 collector-emitter saturation voltage bsx47 base-emitter voltage collector capacitance BSX45 bsx46 bsx47 emitter capacitance transition frequency noise figure conditions ie = 0; vcb = 60 v le = 0;vcb = 60v;tamb=150c ie = 0; vcb = 80 v le = 0;vcb = 80v;tamb=150 lc = 0; veb = 5 v lc = 100ua;vce = 1 v lc = 100ma; vce = 1v lc = 500 ma; vce = 1 v lc = 1 a; vce = 1 v lc= 1 a; ib= 100ma lc = 500 ma; ib = 25 ma lc= 100ma; vce = 1 v lc = 500 ma; vce = 1 v lc = 1 a; vce = 1 v le = ie = 0;vcb = 10v;f=1 mhz lc = ic = 0;veb = 0.5v;f=1 mhz lc = 50 ma; vce = 10 v; f = 100 mhz lc = 100 na; vce = 5 v; rs = 1 kii; f = 1 khz; b = 200 hz min. _ - _ - _ 15 25 63 100 25 35 - _ - 0.75 - - - 50 - typ. - - - 40 90 100 160 40 60 20 30 - - - - - - 3.5 max. 30 10 30 10 10 - 160 250 - - 1 900 1 1.5 2 25 20 15 80 - - unit na ma na ma na v mv v v v pf pf pf pf mhz db switching times (between 10% and 90% levels) ton toff turn-on time turn-off time lcon = 100 ma; lbon = 5 ma; isoff = -5 ma - - - - 200 850 ns ns
npn medium power transistors BSX45; bsx46; bsx47 package outline metal-can cylindrical single-ended package; 3 leads sot5/11 dimensions (mm are the original dimensions) scale unit nnm a 6.60 6.35 a 5.08 b 0.48 0.41 d 9.39 9.08 di 8.33 8.18 j 0.85 0.75 k 0.95 0.75 l 14.2 12.7 w 0.2 a 45 - seating plane 10 mm i h b outline version sot5/1 1 references iec jedec to-39 eiaj european projection e30 issue date
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