<3mi-t-ond.uctoi i, d na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BDY81 description ? ounimuuus i^uneuiui i^urreru-ic- *tr\ collector power dissipation- : pc= 36w @tc= 25 c ? complement to type bdy83 applications ? designed for general purpose switching and amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vcex vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage vbe= -1.5v collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation@tc-25 c junction temperature storage temperature value 60 60 50 10 4 2 36 150 -55-175 unit v v v v a a w r c thermal characteristics symbol rth j-c parameter max thermal resistance,junction to case 3.5 unit ?cm/ lii 1 2 3 pin 1.base 2. collector 3.bvtltter to-220c package , !vf a 1 j i , t _? k i 1 f c t~ - b ? j-^tfc q "1;* j st ! . '- dim a b r d f g h j k l q r s u v f,s~ l d r mm min 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 rl0.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r v / / nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj .semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY81 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) v(br)cbo v(br)ebo vce(sat) vbe(on) iceo icbo iebo hpe-1 hf6-2 fr parameter collector-emitter sustaining voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current gain-bandwidth product conditions lc= 100ma; ib= 0 lc=10ma;le=0 ie= 1 0ma; lc= 0 lc= 3a; ib= 0.3a lc= 0.5a; vce= 5v vce= 20v; ib= 0 vcb= 20v; i6= 0 veb= 5v; lc= 0 lc= 0.5a; vce= 5v lc= 2.5a; vce= 5v lc=0.5a; vce=10v min 50 60 10 40 10 typ. 1 max 1.5 0.9 10 0.2 0.1 240 unit v v v v v ma ma ma mhz hpe-1 classifications a 40-80 b 70-140 c 120-240
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