i, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pn918 MMBT918 to-92 sot-23 mark: 3b npn rf transistor this device is designed for use as rf amplifiers, oscillators and multipliers with collector currents in the 1.0 ma to 30 ma range. sourced from process 43. absolute maximum ratings* ta = 25c unless otherwise noted symbol vceo vcbo vebo ic tj, tstg parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous operating and storage junction temperature range value 15 30 3.0 50 -55 to +150 units v v v ma c these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol pd rhjc rsja characteristic total device dissipation derate above 25c thermal resistance, junction to case thermal resistance, junction to ambient max pn918 350 2.8 125 357 'MMBT918 225 1.8 556 units mw mw/c 'cm c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn rf transistor (continued) electrical characteristics ta = 25c unless otherwise noted symbol parameter test conditions min max units off characteristics vceo(sus) v(br)cbo v(br)ebo icbo collector-emitter sustaining voltage* collector-base breakdown voltage emitter-base breakdown voltage collector cutoff current lc = 3.0 ma, ib = 0 lc= 1.0 ua, ie = 0 le = 10na, lc =0 vcb = 15v, ie=0 vcb = 15v, ta=150c 15 30 3.0 0.01 1.0 v v v ma ha on characteristics hfe vce(sat) vee(sat) dc current gain collector-emitter saturation voltage base-emitter saturation voltage lc = 3.0 rna, vce = 1.0v lc= 10ma, ib = 1.0ma \ = 10ma, ib = 1.0ma 20 0.4 1.0 v v small signal characteristics ft cobo cibo nf current gain - bandwidth product output capacitance input capacitance noise figure lc = 4.0 ma, vce = 10v, f= 100mhz vcb = 10v, ie = 0, f =1.0 mhz vcb = 0, ie = 0, f = 1.0mhz vbe = 0.5v, lc = 0, f = 1.0mhz lc= 1.0ma, vce = 6.0v, rg = 400h, f = 60 mhz 600 1.7 3.0 2.0 6.0 mhz pf pf pf db functional test gpe po t! amplifier power gain power output collector efficiency vcb= 12v, lc = 6.0ma, f = 200 mhz vcb = 15v, lc = 8.0ma, f = 500 mhz vcb = 15v, lc = 8.0ma, f = 500 mhz 15 30 25 db mw % pulse test: pulse width < 300 (is, duty cycle < 2.0%
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