leshan radio company, ltd. lmbt3904tt1g 2 emitter 3 collector 1 base sc-89 maximum ratings rating symbol value unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cbo 60 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic symbol ma x unit total device dissipation fr? 4 board, (1) p d 200 mw t a = 25c derate above 25c 1.6 mw/c thermal resistance, junction to ambient r ja 600 c/w total device dissipation p d 300 mw fr-4 board(2), t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 400 c/w junction and storage temperature t j ,t stg ?55 to +150 c device marking lmbt3904tt1g = am electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo 40 ? vdc (i c = 1.0 madc) collector?base breakdown voltage v (br)cbo 60 ? vdc (i c = 10 adc) emitter?base breakdown voltage v (br)ebo 6.0 ? vdc (i e = 10 adc) base cutoff current i bl ? 50 nadc ( v ce = 30 vdc, v eb = 3.0 vdc, ) collector cutoff current i cex ? 50 nadc ( v ce = 30vdc, v eb = 3.0vdc ) 1. fr-4 minimum pad. 2. fr-4 1.0 x 1.0 inch pad. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. feature ? simplifies circuit design. ? ordering information device marking shipping lmbt3904tt1g ma 3000/tape&reel general purpose transistors npn silicon lmbt3904tt3g ma 10000/tape&reel compliance with we declare that the material of product rohs requirements. rev.o 1/7 s-lmbt3904tt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lmbt3904tt1g ma 3000/tape&reel s-lmbt3904tt3g ma 10000/tape&reel
leshan radio company, ltd. lmbt3904tt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain(1) h fe ?? (i c =0.1 madc, v ce =1.0 vdc) 40 ?? (i c = 1.0 madc, v ce = 1.0 vdc) 70 ?? (i c = 10 madc, v ce = 1.0 vdc) 100 300 (i c = 50madc, v ce = 1.0vdc) 60 ?? (i c = 100madc, v ce =1.0 vdc) 30 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc)(3) ?? 0.2 (i c = 50 madc, i b = 5.0madc) ?? 0.3 base?emitter saturation voltage(3) v be(sat) vdc (i c = 10 madc, i b = 1.0madc) 0.65 0.85 (i c = 50madc, i b = 5.0madc ) ?? 0.95 small?signal characteristics current?gain ? bandwidth product f t 2 0 0 ? - mhz (i c = 10madc, v ce = 20vdc, f = 100mhz) output capacitance (v cb = 5.0vdc, i e = 0, f = 1.0 mhz) c obo ?? 4.0 pf input capacitance c ibo ?? 8.0 pf (v be = 0.5vdc, i c = 0, f = 1.0 mhz) input impedancen h ie 1.0 10 pf (v ce = 10vdc, i c = 1.0madc, f = 1.0 khz) voltage feedback ratio h re 0.5 8.0 x10 ?4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) small?signal current gain h fe 100 400 ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) output admittance h oe 1.0 40 mhos (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) noise figure nf ? 5.0 db (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k ? , f = 1.0 khz) switching characteristics delay time (v cc = 3.0 vdc,v be = 0.5vdc t d ?35 ns rise time i c = 10 madc, i b1 = 1.0madc) t r ?35 storage time (v cc = 3.0vdc, t s ? 200 fall time i c = 10 madc,i b1 = i b2 = 1.0madc) t f ?50 ns 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. rev.o 2/7 ;s-lmbt3904tt1g
leshan radio company, ltd. figure 1 . delay and rise time equivalent test circuit figure 2 . storage and fall time equivalent test circuit
! ! " " * total shunt capacitance of test jig and connectors figure 3 . capacitance # # $%&' &( )' * figure 4 . charge data % +' '### ),&* % -% $ .+/&#( )* &0&% & )* . . & 123 323 rev.o 3/7 lmbt3904tt1g ;s-lmbt3904tt1g
leshan radio company, ltd. i c , collector current (ma) figure 5. turn?on time i c , collector current (ma) figure 6. rise time i c , collector current (ma) figure 7. storage time i c , collector current (ma) figure 8. fall time typical audio small?signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25c, bandwidth = 1.0 hz) t r , rise time (ns) t f , , fall time (ns) v cc = 40 v i c /i b = 10 f, frequency (khz) figure 9. nf, noise figure (db) f = 1.0 khz v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b =10 i c /i b =20 i c /i b =10 i c /i b =20 t ? s = t s ?1 /8 t f i b1 = i b2 i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance=200 ? i c = 1.0 ma source resistance =200 ? i c = 0.5 ma source resistance=500 ? i c = 100 a source resistance =1.0k i c = 50 a r s , source resistance (k ? ) figure 10. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 time (ns) t ? s , storage time (ns) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 12 10 8 6 4 2 0 nf, noise figure (db) rev.o 4/7 lmbt3904tt1g ;s-lmbt3904tt1g
leshan radio company, ltd. h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) i c , collector current (ma) figure 11. current gain i c , collector current (ma) figure 12. output admittance i c , collector current (ma) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio figure 15. dc current gain h fe , current h oe , output admittance ( mhos) h re , voltage feedback ratio (x 10 ?4 ) h ie , input impedance (k ? ) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 100 50 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 typical static characteristics i c , collector current (ma) 10 100 1000 0.1 h , dc current gain 10 1 100 1.0 1000 fe v ce = 1.0 v t j = +150 c +25 c -55 c rev.o 5/7 lmbt3904tt1g ;s-lmbt3904tt1g
leshan radio company, ltd. i b , base current (ma) figure 16. collector saturation region i c , collector current (ma) figure 17. ?on? voltages i c , collector current (ma) figure 18. temperature coefficients v ce , collector emitter voltage (volts) v, voltage (volts) coefficient(mv/c) 1.0 2.0 3.0 5.0 10 20 50 100 200 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma t j = 25c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25c to +125c ?55c to +25c +25c to +125c ?55c to +25c vc for v ce(sat) vb for v be(sat) 0 20 40 60 80 100 120 140 160 180 200 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 rev.o 6/7 lmbt3904tt1g ;s-lmbt3904tt1g
leshan radio company, ltd. g 4 5) * 6 d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c-01 obsolete, new standard 463c-02. a b 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches millimeters b c d g h j k l m n s max max m h h l g recommended pattern of solder pads s sc - 8 9 7/7 lmbt3904tt1 -lmbt3904tt1
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