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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2209 description collector-emitter breakdown voltage- : v (br)ceo = 40v(min) high collector power dissipation complement to type 2sa963 applications designed for low frequency power amplification. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 5 v i c collector current-continuous 1.5 a i cm collector current-peak 3 a p c collector power dissipation @ t c =25 10 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2209 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 50 v v (br)ceo collector-emitter breakdown voltage i c = 2ma; i b = 0 b 40 v v ce( sat ) collector-emitter saturation voltage i c = 1.5a; i b = 150ma 1.0 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.2ma b 1.5 v i cbo collector cutoff current v cb = 20v; i e = 0 1 a i ceo collector cutoff current v ce = 10v; i b = 0 b 100 a i ceo collector cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 1a; v ce = 5v 80 220 f t current-gain?bandwidth product i e = -0.5a; v cb = 5v 150 mhz c ob output capacitance i e = 0; v cb = 5v, f test = 1mhz 50 pf ? h fe classifications q r 80-160 120-220 isc website www.iscsemi.cn 2 |
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