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MM3Z2V0~mm3z75 silicon planar zener diodes features ? total power dissipation : max. 300 mw ? small plastic package suitable for surface mounted design ? tolerance approximately 5% absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 300 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r ja 417 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-323 and symbol 1 2 pinning 1 pin cathode description product specification 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
characteristics at t a = 25 o c type marking code zener voltage range 1) dynamic impedance reverse leakage current v znom v zt at i zt z zt at i zt i r at v r (v) (v) (ma) max. ( ? ) (ma) max. ( a) (v) MM3Z2V0 b0 2.0 1.8...2.15 5 100 5 120 0.5 mm3z2v2 c0 2.2 2.08...2.33 5 100 5 120 0.7 mm3z2v4 1c 2.4 2.28...2.56 5 100 5 120 1 mm3z2v7 1d 2.7 2.5...2.9 5 110 5 120 1 mm3z3v0 1e 3.0 2.8...3.2 5 120 5 50 1 mm3z3v3 1f 3.3 3.1...3.5 5 130 5 20 1 mm3z3v6 1h 3.6 3.4...3.8 5 130 5 10 1 mm3z3v9 1j 3.9 3.7...4.1 5 130 5 5 1 mm3z4v3 1k 4.3 4...4.6 5 130 5 5 1 mm3z4v7 1m 4.7 4.4...5 5 130 5 2 1 mm3z5v1 1n 5.1 4.8...5.4 5 130 5 2 1.5 mm3z5v6 1p 5.6 5.2...6 5 80 5 1 2.5 mm3z6v2 1r 6.2 5.8...6.6 5 50 5 1 3 mm3z6v8 1x 6.8 6.4...7.2 5 30 5 0.5 3.5 mm3z7v5 1y 7.5 7...7.9 5 30 5 0.5 4 mm3z8v2 1z 8.2 7.7...8.7 5 30 5 0.5 5 mm3z9v1 2a 9.1 8.5...9.6 5 30 5 0.5 6 mm3z10 2b 10 9.4...10.6 5 30 5 0.1 7 mm3z11 2c 11 10.4...11.6 5 30 5 0.1 8 mm3z12 2d 12 11.4...12.7 5 35 5 0.1 9 mm3z13 2e 13 12.4...14.1 5 35 5 0.1 10 mm3z15 2f 15 13.8...15.6 5 40 5 0.1 11 mm3z16 2h 16 15.3...17.1 5 40 5 0.1 12 mm3z18 2j 18 16.8...19.1 5 45 5 0.1 13 mm3z20 2k 20 18.8...21.2 5 50 5 0.1 15 mm3z22 2m 22 20.8...23.3 5 55 5 0.1 17 mm3z24 2n 24 22.8...25.6 5 60 5 0.1 19 mm3z27 2p 27 25.1...28.9 2 70 2 0.1 21 mm3z30 2r 30 28...32 2 80 2 0.1 23 mm3z33 2x 33 31...35 2 80 2 0.1 25 mm3z36 2y 36 34...38 2 90 2 0.1 27 mm3z39 2z 39 37...41 2 100 2 0.1 30 mm3z43 3a 43 40...46 2 130 2 0.1 33 mm3z47 3b 47 44...50 2 150 2 0.1 36 mm3z51 3c 51 48...54 2 180 2 0.1 39 mm3z56 3d 56 52...60 2 200 2 0.1 43 mm3z62 3e 62 58...66 2 215 2 0.1 47 mm3z68 3f 68 64...72 2 240 2 0.1 52 mm3z75 3h 75 70...79 2 265 2 0.1 56 1) v zt is tested with pulses (20 ms). MM3Z2V0~mm3z75 silicon planar zener diodes product specification 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
iz 0 0 10 20 vz 30 40 v 8 ma test current iz 5ma 10 20 30 0 breakdown characteristics t j = constant (pulsed) 01 23 test current iz 5ma 10 20 45 7 6 vz tj=25 c o 10 9 v iz 30 40 breakdown characteristics t j = constant (pulsed) tj=25 c 50 ma o 2v7 3v3 3v9 4v7 5v6 6v8 8v2 10 12 15 18 22 27 33 ambient temperature: ta ( c) o 0 25 100 150 0 100 200 300 power dissipation: ptot (mw) derating curve MM3Z2V0~mm3z75 silicon planar zener diodes product specification 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
package outline plastic surface mounted package; 2 leads sod-323 a mm unit b d ce h e b a d a c h e p 1.10 0.80 0.40 0.25 0.15 0.10 1.80 1.60 1.35 1.15 2.80 2.30 e p MM3Z2V0~mm3z75 silicon planar zener diodes product specification 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech

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