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insulated gate bipolar transistor with ultrafast soft recovery diode

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v ces = 600v i c = 160a, t c = 100c t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.70v @ i c = 120a applications ? industrial motor drive ? inverters ? ups ? welding features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce (on) temperature coefficient excellent current sharing in parallel operation 5 s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly e g n-channel c form quantity IRGPS46160DPBF super-247 tube 25 IRGPS46160DPBF base part number package type standard pack orderable part number super-247 g c e c g c e gate collector emitter absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 240 i c @ t c = 100c continuous collector current 160 i cm pulse collector current, v ge = 15v 360 i lm clamped inductive load current, v ge = 20v 480 a i f @ t c = 25c diode continous forward current 240 i f @ t c = 100c diode continous forward current 160 i fm diode maximum forward current 480 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 750 p d @ t c = 100c maximum power dissipation 375 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ) ) ??? ??? 0.20 r jc (diode) junction-to-case (diode) ??? ??? 0.63 r cs case-to-sink (flat, greased surface) ??? 0.24 ??? r ) /

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notes: v cc = 80% (v ces ), v ge = 20v, l = 66 h, r g = 4.7 , tested in production i lm 400a. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c.

calculated continuous current based on maximum allowable junction temperature. package igbt current limit is 195a. package diod e current limit is 120a. note that current limitations arising from heating of the device leads may occur. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100 a v (br)ces / / , ) , , ) , , , , ) , ) / / , ) , av ge = 0v, v ce = 600v ?2.3?mav ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 2.4 3.0 v i f = 120a ?1.9? i f = 120a, t j = 175c i ges gate-to-emitter leakage current ? ? 400 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ? 240 ? i c = 120a q ge gate-to-emitter charge ? 70 ? nc v ge = 15v q gc gate-to-collector charge ? 90 ? v cc = 400v e on turn-on switching loss ? 5750 ? e off turn-off switching loss ? 3430 ? ji c = 120a, v cc = 400v, v ge = 15v e total total switching loss ? 9180 ? r g = 4.7 , h, t j = 25c t d(on) turn-on delay time ? 80 ? energy losses include tail t r rise time ? 70 ? ns & diode reverse recovery t d(off) turn-off delay time ? 190 ? t f fall time ? 40 ? e on turn-on switching loss ? 7740 ? e off turn-off switching loss ? 4390 ? ji c = 120a, v cc = 400v, v ge =15v e total total switching loss ? 12130 ? r g = 4.7 , l = 66 h, t j = 175c t d(on) turn-on delay time ? 80 ? energy losses include tail t r rise time ? 75 ? ns & diode reverse recovery t d(off) turn-off delay time ? 230 ? t f fall time ? 55 ? c ies input capacitance ? 7750 ? pf v ge = 0v c oes output capacitance ? 550 ? v cc = 30v c res reverse transfer capacitance ? 225 ? f = 1.0mhz t j = 175c, i c = 480a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 4.7 , sv cc = 400v, vp , jt j = 175c t rr diode reverse recovery time ? 130 ? ns v cc = 400v, i f = 120a i rr peak reverse recovery current ? 36 ? a v ge = 15v, rg = 4.7 , h conditions

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fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 0.1 1 10 100 f , frequency ( khz ) 20 40 60 80 100 120 140 160 180 200 220 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 375w i square wave: v cc diode as specified fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 175c; v ge =15v fig. 5 - reverse bias soa t j = 175c; v ge =20v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 100 200 300 400 500 600 700 800 p t o t ( w ) 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 i c ( a ) 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc

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fig. 6 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 80 s 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 50 100 150 200 250 300 350 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 350 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 8 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 9 - typ. diode forward characteristics tp = 80 s fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 5 101520 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 6.0a i ce = 120a i ce = 195a 5 101520 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 6.0a i ce = 120a i ce = 195a 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 350 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0 100 200 300 400 500 600 i f ( a ) -40c 25c 175c

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fig. 12 - typical v ce vs. v ge t j = 175c fig. 13 - typ. transfer characteristics v ce = 50v; tp = 10 s 5 101520 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 6.0a i ce = 120a i ce = 195a 3456789101112 v ge, gate-to-emitter voltage (v) 0 50 100 150 200 250 300 350 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c fig. 17 - typ. switching time vs. r g t j = 175c; l = 66 h; v ce = 400v, i ce = 120a; v ge = 15v fig. 14 - typ. energy loss vs. i c t j = 175c; l = 66 h; v ce = 400v, r g = 4.7 ; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 175c; l = 66 h; v ce = 400v, r g = 4.7 ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 175c; l = 66 h; v ce = 400v, i ce = 120a; v ge = 15v 0 50 100 150 200 250 i c (a) 0 5000 10000 15000 20000 25000 30000 e n e r g y ( j ) e off e on 0 50 100 150 200 250 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20406080100 rg ( ) 0 5000 10000 15000 20000 25000 30000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on

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% fig. 18 - typ. diode i rr vs. i f t j = 175c fig. 19 - typ. diode i rr vs. r g t j = 175c 0 50 100 150 200 250 i f (a) 20 25 30 35 40 i r r ( a ) r g = 10 r g = 4.7 r g = 20 r g = 50 0 10 20 30 40 50 r g ( ) 20 25 30 35 40 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 120a; t j = 175c fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 22 - typ. diode e rr vs. i f t j = 175c fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 25c 8 10121416 v ge (v) 2 4 6 8 10 12 14 16 18 t i m e ( s ) 200 300 400 500 600 700 800 900 1000 c u r r e n t ( a ) 350 400 450 500 550 600 di f /dt (a/ s) 20 25 30 35 40 i r r ( a ) 200 300 400 500 600 700 800 di f /dt (a/ s) 2000 2500 3000 3500 4000 4500 q r r ( n c ) 10 20 50 4.7 60a 120a 240a 0 50 100 150 200 250 i f (a) 100 200 300 400 500 600 700 800 e n e r g y ( j ) r g = 4.7 r g = 10 r g = 20 r g = 50

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fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 25 - typical gate charge vs. v ge i ce = 120a; l = 100 h 0 20 40 60 80 100 v ce (v) 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v fig 26. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.04418 0.000167 0.01606 0.000167 0.06827 0.000873 0.06827 0.007828 fig. 27. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00441 0.000008 0.22783 0.000836 0.27340 0.004982 0.12494 0.026498

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' fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc r sh

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fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 700 800 900 -5 0 5 10 15 time ( s) vce (v) -100 0 100 200 300 400 500 600 700 800 900 ice (a) vce ice -100 0 100 200 300 400 500 600 700 -200 -100 0 100 200 300 400 500 time(ns) v ce (v) -30 0 30 60 90 120 150 180 210 i ce (a) 90% i ce 5% v ce 10% i ce eo f f lo s s tf -100 0 100 200 300 400 500 600 700 -400 -300 -200 -100 0 100 200 300 400 time (ns) v ce (v) -30 0 30 60 90 120 150 180 210 i ce (a) test current 90% tes t cur r ent 5% v ce 10 % t e s t cur r ent tr eon loss -60 -40 -20 0 20 40 60 80 100 120 140 -200 0 200 400 time (ns) i f (a) pe a k i rr t rr q rr 10% pe a k irr

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+),, ,+ *, super-247 (to-274aa) part marking information assembly lot code top example: this is an irfps37n50a with assembly lot code 1789 international rectifier logo 89 irfps37n50a 17 part number assembled on ww 19, 1997 in the assembly line "c" note: "p" in assembly line position indicates "lead-free" 719c date code year 7 = 1997 week 19 line c case outline and dimensions ? super-247

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qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ??
highest passing voltage.

! !"!!# ! $$! %!! &''((( )'(%!* ' qualification information ? moisture sensitivity level super-247 n/a esd qualification level industrial (per international rectifier?s internal guidelines) rohs compliant yes human body model class h3b ( 8000v ) ?? aec-q101-001 charged device model class c5 (1125v ) ?? aec-q101-005 date comments ? to i fm diode maximum forward current on page 1. ? added note to switching losses test condition on page 2. revision history 11/14/2014

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