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dcr680n85 phase control thyristor ds593 5 - 4 july 2014 (ln 3 1716 ) 1 / 11 w ww.dynexsemi.com features ? double side cooling ? high surge capability applications ? medium voltage soft starts ? high voltage power supplies ? static switches voltage ratings part and ordering numbe r repetitive peak voltages v drm and v rrm v conditions dcr680n85* dcr680n80 dcr680n75 dcr680n70 8500 8000 7500 7000 t vj = - 40c to 125c, i drm = i rrm = 200ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. 8200v @ - 40 0 c, 8500v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr680n85 note: please use the complete part number when ordering and quote this nu mber in any future correspondence relating to your order. key parameters v drm 8500v i t(av) 677a i tsm 9800a dv/dt* 1500v/s di/dt 200a/s * higher dv/dt selections available outline type code: n (see package details for further information) fig. 1 package outline
semiconductor dcr680n85 2 / 11 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 677 a i t(rms) r ms value - 1063 a i t continuous (direct) on - state current - 1013 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 9.8 ka i 2 t i 2 t for fusing v r = 0 0.48 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0221 c/w single side cooled anode dc - 0.041 c/w cathode dc - 0.0516 c/w r th(c - h) thermal resistance C case to heatsink clamping force 23 kn double side - 0.004 c/w (with mounting compound) single side - 0.008 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 20.0 25.0 kn
semiconductor dcr680n85 3 / 11 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 200 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 100 a/s gate source 30v, 10 ? , non - repetitive - 200 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 100a to 500a at t case = 125c - 1.03 v threshold voltage C high level 500a to 2500a at t case = 125c - 1.3 v r t on - state slope resistance C low lev el 100a to 500a at t case = 125c - 2.06 m ? on - state slope resistance C high level 500a to 2500a at t case = 125c - 1.542 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c,i pea k = 1000a, t p = 1000us, v rm = 100v, di/dt = - 5a/s, - 1200 s dv dr /dt = 20v/s linear to 2500v i rr reverse recovery current i t = 1000a, t p = 1000us,t j = 125c, di/dt = - 5a/s, v r = 100v 95 118 a q s stored charge 3000 4000 c i l latchi ng current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr680n85 4 / 11 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger vol tage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 3 50 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.454245 b = 0.106933 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.001271 d = 0.013218 these values are valid for t j = 125c for i t 100a to 3000a 0 500 1000 1500 2000 2500 3000 0 2 4 6 instantaneous on-state voltage, v tm - (v) instantaneous on-state current, i t - (a) max 125oc min 125oc max 25oc min 25oc
semiconductor dcr680n85 5 / 11 www.dynexsemi.com fig.3 on - state power dissipation C sine wa ve fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 12 14 16 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 25 50 75 100 125 0 200 400 600 800 1000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( c) 180 120 90 60 30 0 2 4 6 8 10 12 14 16 0 500 1000 1500 2000 2500 3000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr680n85 6 / 11 www.dynexsemi.com fig.7 maximum permissible c ase temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case ( c/kw) 0 25 50 75 100 125 0 200 400 600 800 1000 1200 1400 1600 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case -( c) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 mean on-state current, i t(av ) - (a) maximum heatsink temperature t heatsink -( o c) d.c. 180 120 90 60 30 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance, z th(j-c) ( c/kw ) zth double side cooled zth cathode side cooled zth anode side cooled 1 2 3 4 double side cooled r i (c/kw) 3.4733 4.9047 9.1463 4.5220 t i (s) 0.1457 0.0166 1.2832 0.3767 anode side cooled r i (c/kw) 7.6674 5.0530 9.7355 27.5992 t i (s) 0.2241 0.0169 4.0566 8.2780 cathode side cooled r i (c/kw) 6.0393 4.2782 5.1301 25.0874 t i (s) 0.1356 0.0143 0.6594 7.2358 )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 3.03 2.07 180 3.03 2.07 180 3.12 2.12 120 3.49 2.95 120 3.49 2.95 120 3.61 3.04 90 3.99 3.43 90 3.99 3.43 90 4.13 3.54 60 4.43 3.94 60 4.43 3.94 60 4.60 4.08 30 4.77 4.49 30 4.76 4.48 30 4.96 4.66 15 4.92 4.77 15 4.92 4.77 15 5.13 4.97
semiconductor dcr680n85 7 / 11 www.dynexsemi.com fig.10 single - cycle surge current fig.11 multi - cycle surge current fig.12 stored charge fig.13 reverse recovery current 0 5 10 15 20 25 1 10 100 pulse width, t p - (ms) surge current, i tsm - (ka) 0 0.5 1 1.5 2 2.5 i 2 t (ma 2 s) i 2 t i tsm conditions: t case = 125c v r = 0 half-sine wave 1 10 1 10 100 number of cycles surge current, i tsm - (ka) conditions: tcase = 125c v r =0 pulse width = 10ms 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 2 4 6 8 10 12 stored charge , qs - (uc) rate of decay of on - state current, di/dt - (a/us) q s max = 3667.9*(di/dt) 0.3917 q s typical = 3158.5*(di/dt) 0.4161 conditions: tj = 125 c, v peak ~ 4400v vrm ~ 2600v snubber as appropriate to control reverse voltage 0 50 100 150 200 250 0 2 4 6 8 10 12 reverse recovery current, irr - (a) rate of decay of on - state current, di/dt - (a/us) i rrmax = 42.374*(di/dt) 0.7033 i rrtypical = 39.671 *(di/dt) 0.7197 conditions: tj = 125 c, v peak ~ 4400v vrm ~ 2600v snubber as appropriate to control reverse voltage
semiconductor dcr680n85 8 / 11 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c
semiconductor dcr680n85 9 / 11 www.dynexsemi.com fig.16 turn - off time 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 0 20 40 60 80 100 120 rate of change of reapplied voltage, dv/dt - (v/us) normalised turn-off time, tq - (us) t q (dv/dt) = t q(20v/us). 0.7148.(dv/dt) 0.1124 conditions: t j = 125 o c i f = 1000a t p = 1000us v rm = 100v di/dt = -5a/us
semiconductor dcr680n85 10 / 11 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring pac kage outline type code: n fig.17 package outline device maximum thickness (mm) minimum thickness (mm) dcr1110n52 34.89 34.34 dcr1260n42 34.77 34.22 dcr1470n28 34.54 33.99 dcr1530n28 34.54 33.99 dcr1710n22 34.465 33.915 dcr680n85 35.51 34.96 dcr760n85 35.51 34.96 dcr820n65 35.15 34.6 dcr890n65 35.15 34.6
semiconductor dcr680n85 11 / 11 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical per sonnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer servic e. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled do cument and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of l ife, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric cha rge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme c onditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protec t persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target informat ion: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. provisional information: some initial development work has been performed. the datasheet represents a view of the end product based on very limited information. certain details will change. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it i s now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order a cknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade name s of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http: //www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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