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10-FZ06NBA084FP-M306L48 preliminary datasheet flow boost0 600v/84a ps* *ps: 2x84a parallel switch (75a igbt and 99m ? c6) ultrafast igbt with c6 mosfet and sic buck diodes symmetric booster ultra fast switching frequency low inductance layout solar inverter ups fz06nba084fp tj=25c, unless otherwise specified parameter symbol value unit input boost igbt t h =80c 58 t c =80c 76 t h =80c 111 t c =80c 169 t sc t j 125c 10 s v cc v ge =15v 480 v input boost fwd t h =80c 49 t c =80c 63 t h =80c 88 t c =80c 133 peak repetitive reverse voltage gate-emitter peak voltage dc forward current a t p limited by t j max a i f 210 i frm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings v v a flow0 12mm housing target applications schematic types features maximum ratings condition collector-emitter break down voltage repetitive peak collector current t j max repetitive peak forward current power dissipation per diode p tot v w i cpulse i c c v rrm t j =t j max t j =t j max t j =25c t j =t j max w a 600 t j =t j max dc collector current v ce 600 20 225 175 maximum junction temperature c 175 t p limited by t j max 1 revi sion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost mosfet t h =80c 17 t c =80c 19 t h =80c 111 t c =80c 169 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm tc=25c 112 clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) c storage temperature t stg -40?+125 c power dissipation t j max drain to source breakdown voltage v ds dc drain current i d pulsed drain current i dpulse p tot gate-source peak voltage vgs maximum junction temperature c v a v t p limited by t j max w 600 t j =t j max a t j =t j max 150 20 2 revi sion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 3,5 4,5 6 t j =150c t j =25c 2,12 2,72 t j =150c 2,24 t j =25c 250 t j =150c t j =25c 400 t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 0,85 k/w * see dynamic characteristic at mosfet t j =25c 1,55 1,75 t j =125c 1,69 t j =25c 52 t j =125c 43 t j =25c 11 t j =125c 12 t j =25c 0,47 t j =125c 0,60 di ( rec ) max t j =25c 12292 /d t t j =125c 9335 t j =25c 0,078 t j =125c 0,128 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,10 k/w t j =25c 97 t j =125c 193 t j =25c 2,5 3 3,5 t j =125c t j =25c 100 t j =125c t j =25c 5 t j =125c t j =25c 17 t j =125c 16 t j =25c 6 t j =125c 7 t j =25c 105 t j =125c 124 t j =25c 6 t j =125c 7 t j =25c 0,15 t j =125c 0,29 t j =25c 0,40 t j =125c 0,84 ** see gate drive conditions at characteristic figures ns ? v na a v ua m ? 1,05 14 154 119 total gate charge thermal resistance chip to heatsink per chip output capacitance t f turn off delay time rise time zero gate voltage drain current i dss reverse recovered charge peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge input boost fwd gate to source leakage current turn on delay time input capacitance output capacitance rgon=4 ? ** static drain to source on resistance input boost mosfet 77 0,00025 75 48 15 0 pf k/w integrated gate resistor input boost igbt * gate emitter threshold voltage collector-emitter cut-off current incl. diode collector-emitter saturation voltage 400 115 4000 2660 61 ua v nc na ns mws mws a/ s none 94 pf pf c nc conditions characteristic values value v ge(th) v ce(sat) i ces r gint gate-emitter leakage current gate threshold voltage e off turn-on energy loss per pulse fall time turn-off energy loss per pulse input capacitance gate to drain charge gate to source charge r thjh reverse recovery time reverse recovered energy peak rate of fall of recovery current erec c oss i rrm c rss v f v (gs)th i gss t r t d(off) e on q gd q gate f=1mhz i ges c iss c oss q gs vce=vge rgoff=4 ? ** q g c ies q rr t rr t d(on) r ds(on) 15 rgon=4 ? ** thermal grease thickness 50um = 1 w/mk f=1mhz 100 0 0 480 20 10 15 0-10 20 400 30 15 0 0 v ds =v gs 0 350 600 18,1 75 tj=25c 600 350 tj=25c 15 tj=25c tj=25c v 77 0,00121 3 revisio n: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max conditions characteristic values value r 25 tol. 13% tj=25c 19,1 22 24,9 k ? r 100 tol. 5% tj=100c 1411 1486 1560 ? * see details on thermistor charts on fi g ure 2. tj=25c tj=25c thermistor c value igbt gate capacitor c rated resistance* b-value b (25/100) tol. 3% power dissipation p mw 210 k 4000 nf 4,7 4 revisio n: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 1 igbt+mosfet figure 2 igbt+mosfet typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 126 c v ge from 3 v to 19 v in steps of 2 v v ge from 3 v to 19 v in steps of 2 v figure 3 igbt+mosfet figure 4 fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v input boost typical output characteristics 0 20 40 60 80 100 012345 v ce (v) i c (a) 0 15 30 45 60 75 012345678 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 25 50 75 100 125 150 0 0,5 1 1,5 2 2,5 3 3,5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 012345 v ce (v) i c (a) 5 revis ion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 5 igbt+mosfet figure 6 igbt+mosfet typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/126 c t j = 25/126 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 78 a r goff = 4 ? mosfet turn off delayed by 100ns mosfet turn off delayed by 100ns figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/126 c t j = 25/126 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 78 a mosfet turn off delayed by 100ns mosfet turn off delayed by 100ns input boost e on high t e off high t e on low t e off low t 0,000 0,200 0,400 0,600 0,800 1,000 1,200 0 20 40 60 80 100 120 i c (a) e (mws) e off high t e on high t e on low t e off low t 0,000 0,300 0,600 0,900 1,200 1,500 1,800 2,100 0 8 16 24 32 40 r g ( ) e (mws) e rec high t e rec low t 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,160 0 20 40 60 80 100 120 i c (a) e (mws) e rec high t e rec low t 0,080 0,100 0,120 0,140 0,160 0,180 0,200 0,220 0 5 10 15 20 25 30 35 r g ( ) e (mws) 6 revis ion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 9 igbt+mosfet figure 10 igbt+mosfet typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 126 c t j = 126 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 78 a r goff = 4 ? mosfet turn off delayed by 100ns mosfet turn off delayed by 100ns figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 78 a r gon = 4 ? v ge = 15 v input boost t doff t f t don t r 0,00 0,01 0,10 1,00 0 20 40 60 80 100 120 i c (a) t (ms) t rr low t 0,000 0,010 0,020 0,030 0,040 0,050 0 5 10 15 20 25 30 35 r gon ( ) t rr (ms) t rr high t t doff t f t don t r 0,00 0,01 0,10 1,00 0 5 10 15 20 25 30 35 r g ( ) t (ms) t rr high t t rr low t 0,008 0,009 0,010 0,011 0,012 0,013 0,014 0 20 40 60 80 100 120 i c (a) t rr (ms) 7 revis ion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 78 a r gon = 4 ? v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 78 a r gon = 4 ? v ge = 15 v input boost i rrm high t i rrm low t 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 r gon (w) i rrm (a) q rr high t q rr low t 0,4 0,45 0,5 0,55 0,6 0,65 0,7 0,75 0,8 0 5 10 15 20 25 30 35 r gon ( ) q rr (mc) i rrm high t i rrm low t 0 10 20 30 40 50 60 0 20 40 60 80 100 120 i c (a) i rrm (a) q rr high t q rr low t 0,20 0,30 0,40 0,50 0,60 0,70 0,80 0 20 40 60 80 100 120 i c (a) q rr (mc) 8 revis ion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 78 a r gon = 4 ? v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance f red transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 0,85 k/w r thjh = 1,09 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,10 1,8e+00 0,06 4,1e+00 0,32 2,8e-01 0,22 5,0e-01 0,30 8,4e-02 0,55 1,1e-01 0,09 1,2e-02 0,16 1,1e-02 0,04 5,0e-04 0,10 1,6e-03 input boost t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt high t 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 0 5 10 15 20 25 30 35 r gon (w) di rec / dt (a/ms) di rec /dt high t di o /dt low t di rec /dt low t di 0 /dt high t di rec /dt high t di rec /dt low t di o /dt low t 0 2000 4000 6000 8000 10000 12000 14000 16000 0 20 40 60 80 100 120 i c (a) di rec / dt (a/ms) 9 revis ion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 c t j = 175 c v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 c t j = 175 c input boost 0 30 60 90 120 150 180 210 0 50 100 150 200 t h ( o c) p tot (w) 0 15 30 45 60 75 90 0 50 100 150 200 t h ( o c) i c (a) 0 25 50 75 100 125 150 175 0 50 100 150 200 t h ( o c) p tot (w) 0 15 30 45 60 75 0 50 100 150 200 t h ( o c) i f (a) 10 rev ision: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 25 igbt figure 26 igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(q g ) at at d = single pulse i g(ref) =1ma, r l =15 ? th = 80 oc v ge = 15 v t j =t jmax oc figure 27 mosfet figure 28 mosfet mosfet transient thermal impedance gate voltage vs gate charge as a function of pulse width z thjh = f(t p ) v ge = f(q g ) at d = t p / t r thjh = 1,05 k/w at i c = 18 a mosfet thermal model values r (c/w) tau (s) 0,06 3,4e+00 0,23 4,0e-01 0,53 8,8e-02 0,15 1,5e-02 0,08 1,3e-03 0,05 4,7e-04 input boost v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100ms dc 10 0 10 3 10us 0 2 4 6 8 10 12 14 16 0 50 100 150 200 q g (nc) v ge (v) 120 v 480 v t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 0 2 4 6 8 10 0 102030405060 q g (nc) v ge (v) 120v 480v 11 rev ision: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 t (c) k ? [] ?= ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? 25 100 / 25 11 25 )( tt b ertr 12 rev ision: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ06NBA084FP-M306L48 m306l48 m306l48 outline pinout ordering code & marking ordering code and marking - outline - pinout 13 revi sion: 2 copyright by vincotech
10-FZ06NBA084FP-M306L48 preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 14 revis ion: 2 copyright by vincotech

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