please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM3K09FU ? small package ? low on resistance : r on = 0.7 ? (max) (@v gs = 10 v) : r on = 1.2 ? (max) (@v gs = 4 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 400 drain current pulse i dp 800 ma drain power dissipation (ta = 25 c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3) figure 1. marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mountin g on a circuit board), be sure that the environment is protected against electr ostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with de vices should be made of anti-static materials. unit: mm weight: 0.006 g (typ.) d j 1 2 3 1 2 3 0.6 mm 1.0 mm figure 1: 25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 0.1 ma 1.1 ? 1.8 v forward transfer admittance ? y fs ? v ds = 5 v, i d = 200 ma (note2) 270 ? ? ms i d = 200 ma, v gs = 10 v (note2) ? 0.5 0.7 i d = 200 ma, v gs = 4 v (note2) ? 0.8 1.2 drain-source on resistance r ds (on) i d = 200 ma, v gs = 3.3 v (note2) ? 1.0 1.7 input capacitance c iss v ds = 5 v, v gs = 0, f = 1 mhz ? 20 ? pf reverse transfer capacitance c rss v ds = 5 v, v gs = 0, f = 1 mhz ? 7 ? pf output capacitance c oss v ds = 5 v, v gs = 0, f = 1 mhz ? 16 ? pf turn-on time t on ? 72 ? ns switching time turn-off time t off v dd = 5 v, i d = 200 ma, v gs = 0~4 v ? 68 ? ns note2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. (c) v out t on 90% 10% 0 v 4 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 5 v d.u. < = 1% input: t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd output input 4 v 0 10 s 50 r l SSM3K09FU smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|