symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 900 v v gs continuous 20 v v gsm transient 30 v p d t c = 25 c40w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque with 3.5mm screw (to-220) 0.55/5 nm/lb.in. weight to-251/252 = 1 g, to-220 = 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 25 a 900 v v gs(th) v ds = v gs , i d = 25 a 2.5 5 v i gss v gs = 20 v, v ds = 0 50 na i dss v ds = v dss; v gs = 0 v 10 a r ds(on) v gs = 10 v, i d = 50 ma 80 ? pulse test, t 300 s, duty cycle d 2 % i dp plateau current; v ds = 10 v, v gs = 10v 100 130 ma pulse test, t 300 s, duty cycle d 2 % gate controlled current limiter n-channel, enhancement mode d s features ? high output resistance in the saturated mode of operation ? rugged hdmos tm process ? stable peak drain current limit ? high voltage current regulator ? international standard packages applications ? current regulation ? over current and over voltage protection for sensitive loads ? linear regulator g = gate, d = drain, s = source, tab = drain 98701-a (8/02) ixcp 01n90e ixcy 01n90e v dss = 900 v i d(limit) = 250ma r ds(on) = 80 ? ? ? ? ? g to-220 (ixcp) g d s tab to-252 (ixcy) g s tab ? 2002 ixys all rights reserved
symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 100 ma, pulse test 40 ms c iss 133 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 24 pf c rss 6.6 pf t d(on) 15 ns t r v ds = 500 v, i d = 50 ma 137 n s t d(off) v gs = 10 v, r g = 50 ? (external) 11 n s t f 131 ns q g(on) 7.5 nc q gs v gs = 10 v, v ds = 500 v, i d = 50 ma 2.2 nc q gd 3.0 nc ? ? ? ? ? i a(p) / ? ? ? ? ? t plateau current shift v ds = 10 v, v gs = 10 v 50 ppm/k with temperature ? ? ? ? ? v ak / ? ? ? ? ? i a(p) dynamic resistance v ds = 20 v, v gs = 10 v 125 k ? v f i f = 50ma 1.8 v r thjc 3.1 k/w r thca to-220 80 k/w to-251/252 100 k/w ixcp 01n90e ixcy 01n90e to-252 aa outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 pins: 1 - gate 2 - drain 3 - source 4 - drain bottom side to-220 ab dimensions
temperature - o c -50 -25 0 25 50 75 100 125 i d - milliamperes 80 100 120 140 160 180 v gs = 12v 11v 10v 9v figure 1, output characteristics at 25oc figure 4. drain current vs, temperature for a constant gate-source voltage. figure 2. drain current vs.gate voltage f igure 3. dynamic output resistance r o vs. drain current. 0 20 40 60 80 100 120 140 160 0k 100k 200k 300k 400k 500k dynamic resistance r o - ohms i d - milliamperes t j = 25 o c figure 5. allowable power dissipation for various heat sinking conditions. note that the junction temperature can be derated by increasing the ambient temperature a like amount. v gs -volts 6 8 10 12 14 i d - milliamperes 1 10 100 ambient temperature - o c 25 50 75 100 125 150 maximum power dissipation - watts 0 2 4 6 8 10 12 15 20 30 40 50 60 80 100 r(th) ja : 10 k/w v ds - volts 0 1020304050 i d - milli amperes 0 50 100 150 200 250 14v 13v 12v 11v 10v 9v 8v 6v 5v v gs = 15v 7v ixcp 01n90e ixcy 01n90e v ds = 20v v ds = 20v
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