dmg6602svt q document number: ds 37643 rev. 1 - 2 1 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) i d t a = + 25 c q1 3 0v 60 m @ v gs = 10 v 3.4 a 100 m @ v gs = 4 .5 v 2.7 a q2 - 3 0v 95 m @ v gs = - 10 v - 2.8 a 1 4 0 m @ v gs = - 4 .5 v - 2. 3 a description and appl ications this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? backlighting ? dc - dc converters ? power m anagemen t f unctions features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standar ds for high reliability ? ppap capable (note 4) mechanical data ? case: tsot26 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals connections: see d iagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 0 13 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm g6602svt q - 7 tsot26 3 , 0 00 / tape & reel dm g6602s vt q - 13 tsot26 10, 0 00 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes i ncorporateds definitions of hal ogen - and antimo ny - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimon y compounds. 4. automotive products are aec - q10 1 qualified and are ppap capable. automotive, aec - q10 1 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/qu ality/product_compliance_definitions/ . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2010 2011 2012 2013 2014 2015 2016 201 7 201 8 201 9 20 20 code x y z a b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d tso t2 6 t op view t op view n - channel p - chann el 66c = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) 1 2 3 6 5 4 d1 s1 d2 g1 s2 g2 d1 s1 g1 q1 d2 s2 g2 q2 66c y m
dmg6602svt q document number: ds 37643 rev. 1 - 2 2 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information maximum ratings C q1 ( @ta = + 25c unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 3 0 v gate - source voltag e v gss 20 v continuous drain current (note 7 ) v gs = 10 v steady state t a = + 25c t a = + 70 c i d 3.4 2.7 a continuous drain current (note 7 ) v gs = 4 .5 v steady state t a = + 25c t a = + 70 c i d 2.7 2 .2 a maximum continuous body diode forward curre nt (note 5) i s 1.5 a pulsed drain current (note 5 ) i dm 25 a maximum ratings C q2 ( @ta = + 25c unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss - 3 0 v gate - source voltage v gss 20 v continuous drain c urrent (note 7 ) v gs = - 10 v steady state t a = + 25c t a = + 70 c i d - 2.8 - 2. 4 a continuous drain current (note 7 ) v gs = - 4 .5 v steady state t a = + 25c t a = + 70 c i d - 2. 3 - 2.1 a maximum continuous body diode forward current (note 7 ) i s - 1.5 a pulse d drain current (note 7 ) i d - 20 a thermal characteristics characteristic symbol value units total power dissipation (note 6 ) t a = + 25c p d 0.84 w t a = + 70c 0.52 thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 155 c/w t<1 0s 109 total power dissipation (note 7 ) t a = + 25c p d 1.27 w t a = + 70c 0.8 thermal resistance, junction to ambient (note 7 ) s teady s tate r ? ja 102 c/w t<10s 71 thermal resistance, junction to case (note 7 ) r ? j c 34 operating and storage temp erature range t j, t stg - 55 to +150 c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate.
dmg6602svt q document number: ds 37643 rev. 1 - 2 3 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information elect rical c haracteristics C q1 nmos ( @ t a = + 25c unless otherwise stated .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 3 0 - - v v gs = 0v, i d = 250 a zero gate voltage d rain current i dss - - 1.0 a v ds = 24 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1.0 - 2.3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (o n) - 38 55 60 100 m v gs = 10 v, i d = 3.1 a v gs = 4 .5 v, i d = 2 a forward transfer admittance |y fs | - 4 - s v ds = 5 v, i d = 3. 1 a diode forward voltage v sd - 0.8 1 v v gs = 0v, i s = 1 a dynamic characteristics (note 9 ) input capacitance c iss - 290 400 pf v ds = 1 5 v, v gs = 0v , f = 1. 2 mhz output capacitance c oss - 40 80 reverse transfer capacitance c rss - 40 80 gate resistance r g - 1.4 - v ds = 0 v, v gs = 0v , f = 1mhz total gate charge (v gs = 4.5 v) q g - 4 6 nc v d s = 1 5 v, v gs = 4. 5 v , i d = 3.1 a total gate charge (v gs = 10 v) q g - 9 13 v d s = 1 5 v, v gs = 10 v , i d = 3 a gate - source charge q gs - 1.2 - gate - drain charge q gd - 1.5 - turn - on delay time t d(on) - 3 - ns v gs = 10 v, v ds = 1 5 v, r g = 3 , r l = 4.7 turn - on rise ti me t r - 5 - turn - off delay time t d(off) - 13 - turn - off fall time t f - 3 - notes: 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 2.0 4.0 6.0 8.0 10.0 v , gate source voltage(v) fig. 2 typical transfer characteristics gs i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 0 1 2 3 4 5 v = 5.0v ds
dmg6602svt q document number: ds 37643 rev. 1 - 2 4 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.01 0.1 1 0 4 8 12 16 20 r ( ) ave @ v =4.5v ds(on) g ? r ( ) ave @ v =10v ds(on) g ? i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.04 0.08 0.12 0.16 0 2 4 6 8 10 v = 4.5v gs ave r ( ) @ 150c ds(on) ? ave r ( ) @ -55c ds(on) ? ave r ( ) @ 25c ds(on) ? ave r ( ) @ 85c ds(on) ? ave r ( ) @ 125c ds(on) ? -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e d s ( o n ) 0 0.02 0.04 0.06 0.08 0.1 0 0.4 0.8 1.6 1.2 2.4 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j ? i = 250 a d ? i = 1ma d 2.0 i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 2 4 6 8 10 v (v) @ v =0v t = 25 c sd ds a ?
dmg6602svt q document number: ds 37643 rev. 1 - 2 5 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information f = 1mhz v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t c ave (pf) rss 10 100 1000 0 5 10 15 20 25 30 c ave (pf) iss c ave (pf) oss 0 2 4 6 8 10 0 2 4 6 8 10 v = 10v i = 3.0a ds d q (nc) g , total gate charge fig. 10 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0.1 1 10 100 v , drain-source voltage (v) fig. 11 soa, safe operation area ds 0.01 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d r limited ds(on) t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dmg6602svt q document number: ds 37643 rev. 1 - 2 6 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information electrical characteristics C q2 pmos ( @ t a = + 25c unless otherwise stated .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 3 0 - - v v gs = 0v, i d = - 250 a zero gate voltage drain current i dss - - - 1.0 a v ds = - 24 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1.0 - - 2.3 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) - 73 99 95 1 4 0 m v gs = - 10 v, i d = - 2.7 a v gs = - 4 .5 v, i d = - 2 a forward transfer admittance |y fs | - 6 - s v ds = - 5 v, i d = - 2.7 a diode forward voltage v sd - - 0.8 - 1.0 v v gs = 0v, i s = - 1 a dy namic characteristics (note 9 ) input capacitance c iss - 350 420 pf v ds = - 1 5 v, v gs = 0v , f = 1. 2 mhz output capacitance c oss - 50 100 reverse transfer capacitance c rss - 45 80 gate resistance r g - 17.1 - v ds = 0 v, v gs = 0v , f = 1mhz tota l gate charge (v gs = - 4.5 v) q g - 4 6 nc v d s = - 1 5 v, v gs = - 4.5 v , i d = - 3 a total gate charge (v gs = - 10 v) q g - 7 9 v d s = - 1 5 v, v gs = - 10 v , i d = - 3 a gate - source charge q gs - 0.9 - gate - drain charge q gd - 1.2 - turn - on delay time t d(on) - 4 .8 - ns v gs = - 10 v, v ds = - 1 5 v, r g = 6 , r l = 15 turn - on rise time t r - 7.3 - turn - off delay time t d(off) - 20 - turn - off fall time t f - 13 - n otes : 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 12 typical output characteristics ds 0.0 2.0 4.0 6.0 8.0 i , d r a i n c u r r e n t d v , gate source voltage(v) fig. 13 typical transfer characteristics gs i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
dmg6602svt q document number: ds 37643 rev. 1 - 2 7 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information i , drain source current fig. 14 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 2 r ( ) ave @ v =2.5v ds(on) g ? r ( ) ave @ v =4.5v ds(on) g ? r ( ) ave @ v =10v ds(on) g ? 4 8 6 0 2 4 6 8 i , drain source current (a) fig. 15 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs 0 0.04 0.08 0.12 0.16 0.2 ave r ( ) @ 150c ds(on) ? ave r ( ) @ -55c ds(on) ? ave r ( ) @ 25c ds(on) ? ave r ( ) @ 85c ds(on) ? ave r ( ) @ 125c ds(on) ? -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 16 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 17 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.04 0.08 0.12 0.16 0.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 18 gate threshold variation vs. ambient temperature 0 0.4 0.8 1.2 1.6 2 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) v , source -drain voltage (v) sd fig. 19 diode forward voltage vs. current i , s o u r c e c u r r e n t ( v ) s 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4
dmg6602svt q document number: ds 37643 rev. 1 - 2 8 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information -v , drain-source voltage (v) fig. 20 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 0 5 10 15 20 25 30 f = 1mhz c ave(pf) iss c ave(pf) oss c ave(pf) rss 0 2 4 6 8 10 0 2 4 6 8 10 v = -15 i = -3a ds d q (nc) g , total gate charge fig. 21 gate charge - v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0.1 1 10 100 -v , drain-source voltage (v) fig. 22 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d r limited ds(on) t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) fig. 23 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 164c/w duty cycle, d = t1/ t2 ? ja ?? ja ja
dmg6602svt q document number: ds 37643 rev. 1 - 2 9 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap0200 1 at http://www.diodes.com/datash eets/ap0200 1 .pdf for the latest version. tsot26 dim min max typ a ? ? ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? e ? ? e1 ? ? b 0.30 0.45 ? c 0.12 0.20 ? e ? ? e1 ? ? l 0.30 0.50 l2 ? ? 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 y1 c c x (6x) y (6x) c a1 l e1 e a2 d e1 e 6x b ? 4x 1 ?? l2 a
dmg6602svt q document number: ds 37643 rev. 1 - 2 10 of 10 www.diodes.com december 2014 ? diodes incorporated dmg6602svt q advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or an y product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes. com
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